H9JCNNNBK3MLYR-N6E vs K3LKCKC0BM-MGCP Comparison
Detailed side-by-side comparison of H9JCNNNBK3MLYR-N6E by SK hynix and K3LKCKC0BM-MGCP by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K3LKCKC0BM-MGCP - 64Gb LPDDR5 SDRAM 6400 Mbps | Samsung
K3LKCKC0BM-MGCP β ActiveSpecification Comparison
| Parameter | H9JCNNNBK3MLYR-N6E | K3LKCKC0BM-MGCP |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.37 | $47.90 |
| Memory Type | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Density | 16 Gb (2 GB) | 64 Gbit (8 GB) |
| Organization | 512M x 32 | 2G x32 |
| Data Rate | 6400 Mbps per pin | 6400 Mbps |
| Supply Voltage (VDD2) | 1.05 V | β |
| Supply Voltage (VDD1) | [DATA_NEEDED: VDD1 rail voltage] | 1.05 V |
| Supply Voltage (VDDQ) | [DATA_NEEDED: VDDQ rail voltage] | β |
| Package | TFBGA-315 | FBGA-315 (PBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Channels | Dual channel (x16 + x16) | β |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| RoHS Status | Compliant | Compliant |
| Memory Technology | DRAM (volatile) | β |
| Refresh Mode | [DATA_NEEDED: refresh mode support] | β |
| On-Die Termination | [DATA_NEEDED: ODT support] | β |
| Bank Architecture | [DATA_NEEDED: bank group configuration] | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Interface | β | CMOS, LPDDR5 |
| Supply Voltage (VDD2/other rails) | β | 1.8 V, 900 mV, 500 mV |
| Technology | β | CMOS DRAM |
| Product Family | β | Samsung LPDDR5 |
| Bandwidth (per Samsung LPDDR5 family) | β | 51.2 GB/s (family-level, 6400 Mbps pin speed) |
| Power Saving (family feature) | β | Up to 20% power saving vs previous generation (Samsung LPDDR5 family) |
| Unit Price | β | USD 57.7195 (LCSC, as of 2026-09-04) |