IAUC100N04S6N022ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6N022ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6N022ATMA1
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6N022ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.94 |
| Technology | OptiMOS 6, N-Channel MOSFET | β |
| Drain-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D, Tc) | 100 A | β |
| Power Dissipation (P_D, Tc) | 75 W | β |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | β |
| Package | PG-TDSON-8 (5x6 mm) leadless | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Polarity | N-Channel enhancement mode | β |
| Automotive Qualification | AEC-Q100 (IAUC family) | AEC-Q101 (per part number suffix) |
| Pin Count | 8 | β |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |