IAUC120N04S6L009ATMA1 vs IAUC120N06S5L032ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6L009ATMA1 by Infineon and IAUC120N06S5L032ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΞ© 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 β ActiveInfineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6L009ATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | OptiMOS 5 (60 V) |
| Transistor Type | N-Channel MOSFET | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 150 A (per datasheet header) | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100Β°C) | [DATA_NEEDED: I_D at TC=100C] | β |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed I_DM] | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 0.9 mΞ© | β |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: VGS(th) typ/range] | β |
| Gate Charge Q<sub>g</sub> | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25Β°C) | 150 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-34 (5x6 mm leadless, SS08) | PG-TDSON-8-34 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| AEC-Q101 Automotive Qualification | Yes | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Avalanche Energy E<sub>AS</sub> | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Drain-to-Source Voltage (V_DS) | β | 60 V |
| Continuous Drain Current (I_D, T_j) | β | 120 A |
| R_DS(on) Max (V_GS = 10 V) | β | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | β | 94 W |
| Operating Temperature Range | β | -55 C to +175 C (T_j) |
| Technology | β | OptiMOS 5 Trench |
| AEC-Q101 Qualified | β | Yes |
| Gate Threshold Voltage V_GS(th) | β | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | β | [DATA_NEEDED: Q_G total at V_GS=10V] |