IAUC50N08S5N102ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IAUC50N08S5N102ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC50N08S5N102ATMA1
IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon
IAUC50N08S5N102ATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IAUC50N08S5N102ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 50 A | β |
| On-Resistance (RDS(on)) | 10.2 mΞ© @ 25 A, 10 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 4 V (max, typical) |
| Gate-Source Voltage (VGS) Max | Β±20 V | β |
| Total Gate Charge (Qg) | 21 nC @ 10 V | β |
| Input Capacitance (Ciss) | 1394 pF @ 40 V | β |
| Power Dissipation (PD) at TC=25Β°C | 60 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C | β |
| Package / Case | PG-TDSON-8-33 | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Technology | β | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |