IAUCN08S7L033ATMA1 vs IPC100N04S51R7ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L033ATMA1 by Infineon and IPC100N04S51R7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveInfineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7L033ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | OptiMOS-5 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS) | 80 V | β |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΞ© | β |
| Continuous Drain Current (ID) at Tj | 130 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | [DATA_NEEDED: ID at Tc=25C] | β |
| Power Dissipation (PD) at Tc=25Β°C | 118 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate-Source Voltage (VGS) max | Β±20 V (typical Infineon OptiMOS 7 limit) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | β |
| Package | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | β |
| Technology | OptiMOS 7 trench MOSFET | β |
| RoHS Status | Compliant | Compliant (Green Product) |
| MSL Level | 1 (per JEDEC J-STD-020, typical for this package) | MSL1 (260 Β°C peak reflow) |
| Drain-Source Voltage VDS | β | 40 V |
| Continuous Drain Current ID | β | 100 A (at TC) |
| Pulsed Drain Current IDM | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | β | 115 W (at TC) |
| Thermal Resistance RthJC | β | 1.3 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% tested |
| Built-in Body Diode | β | Yes |