IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
MPN: IAUCN08S7L033ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.21 | $605.00 |
| 1,000 | $1.04 | $1,040.00 |
| 5,000 | $0.86 | $4,300.00 |
IAUCN08S7L033ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between drain and source terminals. Within the power semiconductor taxonomy, the IAUCN08S7L033ATMA1 sits in the N-channel enhancement-mode MOSFET family, which itself belongs to the broader discrete power transistor category used for switching and amplification in power electronics. Its primary system role is synchronous rectification, DC-DC conversion, and high-current load switching in switched-mode power supplies (SMPS), motor drives, and battery management systems.
Key features of this OptiMOS 7 generation device include ultra-low RDS(on) of 3.3 mΩ maximum at VGS = 10 V, a logic-level compatible gate threshold that simplifies driver design, and an automotive-grade qualification per Infineon's AEC-Q100-compatible process flow. The 80 V rating provides ample headroom for 12 V and 24 V automotive bus systems including load-dump transients. The PG-TDSON-8-34 package exposes the drain through a large thermal pad, enabling direct PCB heat spreading and supporting the 118 W (Tc) power dissipation figure.
Technically, the OptiMOS 7 platform uses Infineon's latest trench-cell geometry to minimize both conduction losses (low RDS(on)) and switching losses (low Qg, Qgd). Compared to OptiMOS 5, this generation typically delivers 30-40% lower RDS(on) per die area and improved Figure-of-Merit (FOM = RDS(on) × Qg), which directly translates into cooler operation, higher power density, and better efficiency in high-frequency converters. The low gate charge also enables faster switching transitions when paired with a suitably rated gate driver.
Typical applications for the IAUCN08S7L033ATMA1 include high-current synchronous rectification in 48 V mild-hybrid DC-DC converters, battery protection and hot-swap controllers in 12 V/24 V automotive systems, motor-drive half-bridges for electric power steering (EPS) and water/oil pumps, and high-current USB-PD power delivery sinks. The 80 V rating also makes it suitable for industrial 24 V bus converters and telecom hold-up power stages.
When designing with this MOSFET, pay close attention to gate-drive voltage (10 V recommended for full RDS(on)), PCB layout for the thermal pad (direct soldering to a copper pour of at least 1 sq inch is required at >50 W dissipation), and avalanche energy in unclamped inductive switching. Use a 10 kΩ gate-source pull-down to prevent unwanted turn-on during transients.
This page synthesizes Infineon OptiMOS 7 datasheet specifications, distributor pricing, and pin-compatible drop-in alternatives curated from the XAIPART component database, providing engineering context that goes beyond the manufacturer datasheet.
Drop-in alternatives for IAUCN08S7L033ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN08S7L033ATMA1 (same form factor and footprint) — differing in Package, Mounting Type, RoHS Status, Drain-Source Voltage (VDS), Gate-Source Voltage (VGS) max.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN08S7N037GATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IAUCN08S7L042GATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IAUC120N06S5L015ATMA1
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →IAUCN04S7N027GATMA1
✅ Drop-In✓ In Stock
$0.72 / Unit
View Datasheet →BSC019N04LSGATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPC100N04S51R7ATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IAUCN08S7L033ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | Automotive OptiMOS 7 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | 130 A |
| Power Dissipation (PD) at Tc=25°C | 118 W |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) |
| Operating Temperature Range | -55°C to +175°C (TJ) |
| Package | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Mounting Type | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) |
| Technology | OptiMOS 7 trench MOSFET |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, typical for this package) |
IAUCN08S7L033ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (connected to PCB ground) |
| Pin 2 | Source — Source terminal (connected to PCB ground) |
| Pin 3 | Source — Source terminal (connected to PCB ground) |
| Pin 4 | Gate — Gate drive input (10 V recommended for full RDS(on)) |
| Pin 5 | Drain — Drain terminal (high-voltage switching node) |
| Pin 6 | Drain — Drain terminal (high-voltage switching node) |
| Pin 7 | Drain — Drain terminal (high-voltage switching node) |
| Pin 8 | Drain — Drain terminal (high-voltage switching node, also exposed pad) |
Safe Operating Area (estimated from datasheet typical curves)
Typical Applications
IAUCN08S7L033ATMA1 is suitable for 6 applications: 48V Mild-Hybrid DC-DC Converter, Automotive Battery Hot-Swap Controller, Electric Power Steering (EPS) Motor Drive, Industrial 24V Bus DC-DC Converter, USB-PD High-Current Sink Switch, Telecom Hold-Up Power Stage.
48V Mild-Hybrid DC-DC Converter
The IAUCN08S7L033ATMA1 fits the synchronous-rectifier stage of 48 V mild-hybrid DC-DC converters because its 80 V VDS rating provides comfortable margin over the 48 V bus, while its 3.3 mΩ max RDS(on) at VGS=10V keeps conduction losses low at 20-40 A load currents typical of 1-3 kW converter stages. The PG-TDSON-8-34 (SSO8 5x6 mm²) package exposes the drain pad for direct PCB heatsinking, supporting the 118 W (Tc) dissipation figure during transient load steps. Compared with OptiMOS 5 predecessors, the OptiMOS 7 generation delivers roughly 30-40% lower RDS(on) per die area, which directly translates into cooler operation and higher power density in the converter. Place the MOSFET adjacent to the transformer secondary with a 10 kΩ gate-source pull-down to prevent dv/dt-induced turn-on during the primary-side switching edge. Pair with the Infineon EiceDriver 2ED2106S06F gate driver for optimal switching loss at 100-200 kHz operating frequency.
Recommended
Automotive Battery Hot-Swap Controller
In 12 V or 24 V automotive battery hot-swap and reverse-battery protection circuits, the IAUCN08S7L033ATMA1 serves as the high-side ORing switch because its 80 V VDS rating absorbs inductive transients and load-dump events that can exceed 35 V on the 12 V bus. The 130 A continuous drain current at Tj supports the inrush currents of large DC loads (ECUs, infotainment, ADAS compute platforms). The 3.3 mΩ RDS(on) limits steady-state conduction loss to roughly 0.5 W at 12 A continuous load, eliminating the need for active cooling in most chassis-mount enclosures. Use a gate-source Zener clamp and a TVS such as the IAUZ40N10S5N130ATMA1 family for transient voltage suppression across the drain-source path. The automotive-grade qualification of the OptiMOS 7 family makes this part suitable for under-hood and body-control applications.
Recommended
Electric Power Steering (EPS) Motor Drive
The IAUCN08S7L033ATMA1 is well-suited to the three-phase inverter of electric power steering (EPS) and electric water/oil pumps because its 80 V VDS rating provides 3x margin over the 12 V or 24 V supply, while its low 3.3 mΩ RDS(on) keeps the I²R losses in the half-bridge manageable at the 30-80 A phase currents typical of small automotive BLDC drives. The PG-TDSON-8-34 exposed drain pad enables PCB-direct heat removal, which is critical in the confined space of the steering column housing where external heatsinks are impractical. The OptiMOS 7 generation's lower Qg and Qgd reduce switching losses at 20 kHz PWM, reducing motor torque ripple and audible noise. Place gate-drive resistors (10-22 Ω) close to the gate pin to suppress parasitic ringing during the 50-100 ns switching transitions.
Recommended
Industrial 24V Bus DC-DC Converter
In industrial 24 V bus DC-DC converters (e.g. 24 V to 5 V or 12 V), the IAUCN08S7L033ATMA1 operates as the synchronous rectifier on the secondary side because its 80 V VDS comfortably exceeds the rectified 24 V bus plus voltage spikes from leakage inductance, while its 3.3 mΩ RDS(on) at 10 V VGS keeps efficiency above 96% at 10-20 A loads. The 175°C maximum junction temperature supports operation in sealed industrial enclosures without active cooling. Compared with older OptiMOS 3/5 generations, this OptiMOS 7 part reduces switching losses by approximately 30%, allowing higher switching frequencies (200-500 kHz) and smaller magnetic components. Use the IR2104STRPBF or 2ED2106S06F half-bridge gate driver for bootstrap high-side drive in buck-derived topologies.
Recommended
USB-PD High-Current Sink Switch
The IAUCN08S7L033ATMA1 functions as the VBUS load switch in USB-PD EPR (Extended Power Range) sinks accepting up to 28 V / 36 V / 48 V at 5 A, where its 80 V VDS provides robust transient protection while its 3.3 mΩ RDS(on) limits full-load drop to roughly 165 mV at 5 A - well within USB-PD cable compensation budgets. The PG-TDSON-8-34 (SSO8 5x6 mm²) package occupies approximately 30 mm² of PCB area, fitting easily inside compact laptop and docking-station enclosures. Drive the gate with a charge pump or bootstrap driver to maintain VGS above 10 V across the full input range. Add a TVS across VBUS for hot-plug surge protection and a 100 kΩ gate-source pull-down to prevent false turn-on during ESD events.
Recommended
Telecom Hold-Up Power Stage
The IAUCN08S7L033ATMA1 supports telecom 48 V hold-up and ORing applications because its 80 V VDS rating covers the 48 V nominal bus plus transient over-voltages up to 60 V during fault-clearing events. The 3.3 mΩ RDS(on) keeps conduction loss below 1.5 W at 25 A continuous, allowing the ORing MOSFET to operate without a dedicated heatsink in 1U rack-mount equipment. The 175°C maximum junction temperature and automotive-grade qualification provide margin for the elevated ambient temperatures inside sealed telecom enclosures. Use two IAUCN08S7L033ATMA1 in a back-to-back source configuration (sources tied together) for true bidirectional ORing between redundant -48 V feeds, with the gate driven by a dedicated ORing controller such as the IRF1310NSTRLPBF family.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN08S7L033ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN08S7N037GATMA1 | IAUCN08S7L042GATMA1 | IAUC120N06S5L015ATMA1 | IAUCN04S7N027GATMA1 | BSC019N04LSGATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS Max (V) | 80 | 80 | 80 | 60 | 40 | 40 | 40 |
| RDS(on) Max at VGS=10V (mΩ) | 3.3 | 3.7 | 4.2 | 1.5 | 2.7 | 1.9 | 1.7 |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5/6 | OptiMOS 5 |
| Qualification | Automotive | Automotive | Automotive | Automotive | Automotive | Automotive | Automotive |
Key Differentiators
- Lowest RDS(on) in 80V automotive N-MOSFET class at 80V VDS (vs IAUCN08S7N037GATMA1)
- Higher VDS rating for 48 V bus applications (vs BSC019N04LSGATMA1)
- OptiMOS 7 generation Figure-of-Merit advantage (vs IPC100N04S51R7ATMA1)
Design Notes
Estimated: at 80 V VDS, 30 A continuous load, and 50% duty cycle, the IAUCN08S7L033ATMA1 dissipates roughly 1.5 W (P = I² × R × D = 30² × 0.0033 × 0.5). The PG-TDSON-8-34 package has a typical theta_JA of approximately 50 C/W on a 1 oz copper 1 sq inch pad, yielding a 75°C junction temperature rise above 25°C ambient - within the 175°C Tj limit. For sustained loads above 50 A, expand the PCB copper area to 4+ sq inches or add an exposed thermal pad on the bottom of the board.
Solder the exposed drain pad (pins 5-8) directly to a continuous copper pour of at least 1 sq inch on the top layer, with thermal vias (0.3 mm drill, 1 mm pitch) connecting to inner-layer copper spreads. Place the gate-drive loop (gate resistor, gate-source pull-down, gate driver output) within 10 mm of the gate pin to minimize parasitic inductance, which causes gate-overshoot and ringing during fast switching transitions at 100+ kHz.
Do not exceed the maximum VGS rating of ±20 V (typical for OptiMOS 7) - gate over-voltage destroys the thin gate oxide. Add a 10 kΩ gate-source pull-down resistor to prevent dv/dt-induced turn-on during high-side switching transients. In bridge topologies, never operate the body diode beyond its reverse-recovery rating; place a small RC snubber (10 Ω + 1 nF) across drain-source if ringing exceeds 30% of VDS.
Keep the source-return path (from source pin to gate-driver ground) as short as possible - a Kelvin-source connection (pin 1 routed directly to gate-driver ground, separate from power-source return) eliminates source-inductance-induced gate-voltage degradation. Place input bypass capacitors (10-22 µF ceramic + 100 µF electrolytic) within 5 mm of the drain pin to suppress switching-node ringing and voltage overshoot.
Compliance Information
Automotive grade per Infineon OptiMOS 7 datasheet header. RoHS and REACH compliant per Infineon product page. Halogen-free per JEDEC JS709B. AEC-Q100 qualified - suitable for automotive under-hood and body-control applications.
