IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
MPN: IPC100N04S51R7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.97 | $970.00 |
| 3,000 | $0.82 | $2,460.00 |
IPC100N04S51R7ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate conduction between the drain and source terminals. Within the discrete-semiconductor hierarchy, MOSFETs sit under transistors and serve as the workhorse switching element in DC-DC converters, motor drives, and load switches. The OptiMOS-5 family targets best-in-class figure-of-merit (FOM = RDS(on) x Qg), giving system designers lower conduction and switching losses compared to older generations.
Key features of this part include AEC-Q101 automotive qualification, 100% avalanche-tested silicon, MSL1 rating to 260 °C peak reflow, a 175 °C maximum operating junction temperature, and RoHS-compliant lead-free terminations. The PG-TDSON-8-34 footprint exposes the drain via the thermal pad, which slashes package resistance and inductance versus traditional DPAK packages.
OptiMOS-5 40 V is optimized for 12 V and 24 V automotive subsystems such as ECU power rails, body electronics, electric power steering, and braking modules. The combination of very low on-resistance and high pulsed current handling makes the device equally suited to high-current synchronous rectification in 48 V mild-hybrid DC-DC stages and to battery-protection disconnect switches in e-mobility applications.
When designing with this device, observe safe operating area (SOA) by derating current with temperature; the 100 A rating applies at TC and falls as TC rises. Place the gate driver within a few millimeters of the gate pin to suppress ringing, and provide a low-impedance Kelvin source connection whenever possible. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet.
Drop-in alternatives for IPC100N04S51R7ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPC100N04S51R7ATMA1 (same form factor and footprint) — differing in Package, MSL Level, Technology, Operating Temperature Range, Automotive Qualification.
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View Datasheet →IPC100N04S51R7ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS-5 |
| Transistor Type | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | 40 V |
| Continuous Drain Current ID | 100 A (at TC) |
| Power Dissipation PD | 115 W (at TC) |
| Thermal Resistance RthJC | 1.3 K/W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (260 °C peak reflow) |
| AEC-Q101 Qualified | Yes |
| Avalanche Tested | 100% tested |
| RoHS Status | Compliant (Green Product) |
| Built-in Body Diode | Yes |
IPC100N04S51R7ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (Kelvin source recommended for gate-drive return) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source terminal |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
| Pin PAD | Drain — Drain terminal and thermal pad (exposed) |
Safe Operating Area (DC)
Typical Applications
IPC100N04S51R7ATMA1 is suitable for 6 applications: Automotive ECU Power Distribution, Electric Power Steering (EPS) Motor Drive, 48V Mild-Hybrid DC-DC Converter, Battery Protection Disconnect Switch, Industrial 24V Solenoid and Relay Driver, Hot-Swap and OR-ing Controllers.
Automotive ECU Power Distribution
The IPC100N04S51R7ATMA1 is well matched to automotive ECU power distribution rails because its 100 A continuous drain current supports high-current body-electronics loads while its 40 V VDS rating tolerates 12 V and 24 V bus transients including load-dump. AEC-Q101 qualification and 100% avalanche testing make it acceptable for ISO 26262 safety architectures under ASIL-B and ASIL-C decomposition. Placed as a high-side load switch with a gate driver within a few mm of the gate pin to suppress ringing, the device dissipates conduction losses roughly proportional to ID × RDS(on); versus a competing 60 A part the IPC100N04S51R7ATMA1 reduces parallel-FET count in high-current branches.
Recommended
Electric Power Steering (EPS) Motor Drive
Electric power steering demands high pulse current capability during parking maneuvers combined with low conduction loss to preserve battery range. The IPC100N04S51R7ATMA1's 100 A continuous rating and 193 A pulsed silicon ceiling accommodate the multi-kilowatt peak power of column-assist EPS systems, while the 1.3 K/W RthJC keeps junction temperature manageable when the PG-TDSON-8-34 thermal pad is soldered to a 2-square-inch copper pour. Used as the low-side synchronous FET in a 3-phase bridge, the part replaces legacy DPAK MOSFETs at lower switching loss thanks to the OptiMOS-5 40 V FOM advantage.
Recommended
48V Mild-Hybrid DC-DC Converter
Mild-hybrid 48 V vehicles integrate a 48 V bus that requires a 40 V-class MOSFET to step down to 12 V with high efficiency. The IPC100N04S51R7ATMA1's 40 V VDS rating with derating margin suits 48 V bus transients, and its 100 A ID rating supports multi-kW synchronous rectification stages. The OptiMOS-5 platform's low Qg × RDS(on) FOM minimizes switching loss at 100-200 kHz switching frequencies, while the SS08 leadless PG-TDSON-8-34 package cuts loop inductance versus DPAK, reducing voltage overshoot and snubber losses in hard-switched topologies.
Recommended
Battery Protection Disconnect Switch
In e-mobility battery management, the IPC100N04S51R7ATMA1 serves as a high-current disconnect switch between the lithium pack and the traction inverter. The 100 A continuous rating accommodates continuous discharge currents up to 12-15 kW at pack voltages of 36-48 V, while the avalanche-rated body diode protects against reverse-battery fault events. Mounted on the PG-TDSON-8-34 thermal pad with substantial copper, the FET stays well within the 175 °C junction limit during fault-clearing events. AEC-Q101 qualification is required for ISO 26262 battery-pack architectures.
Recommended
Industrial 24V Solenoid and Relay Driver
Industrial 24 V solenoid drivers benefit from the IPC100N04S51R7ATMA1's 40 V VDS rating (with 24 V bus plus inductive flyback margin) and 100 A peak handling for high-inrush solenoid coils. The avalanche-rated body diode clamps inductive kickback, eliminating external freewheeling diodes in many designs. Combined with a low-cost gate driver, the FET can switch solenoids at 1-2 kHz PWM for proportional control while sustaining continuous currents of tens of amps in valve and actuator arrays.
Recommended
Hot-Swap and OR-ing Controllers
Hot-swap controllers in server and telecom 12 V/24 V distribution use the IPC100N04S51R7ATMA1 as the inrush-limiting pass-FET. The 40 V VDS rating with derating margin covers 12 V and 24 V buses with transient tolerance, and the 100 A ID rating supports high-current server rails. The low RDS(on) reduces steady-state voltage drop across the hot-swap FET, which improves power-supply efficiency at load. The avalanche-rated body diode doubles as reverse-polarity protection in OR-ing configurations, removing the need for a discrete Schottky.
Recommended
Recommended Products Summary
Engineering reference data for IPC100N04S51R7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB100N04S4H2ATMA1 | IPC100N04S5L1R5ATMA1 | IPC70N04S5L4R2ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8 (same family) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8 (same family) |
| Drain-Source Voltage VDS | 40 V | 40 V | 40 V | 40 V | 60 V |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes |
| Avalanche Tested | 100% tested | 100% tested | 100% tested | 100% tested | 100% tested |
| Operating Temperature | 175 °C max | 175 °C max | 175 °C max | 175 °C max | 175 °C max |
| RoHS Status | Compliant (Green Product) | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Highest continuous current in 40 V OptiMOS-5 PG-TDSON family (vs IPC70N04S5L4R2ATMA1)
- Lower RDS(on) per package area than competing 60 V parts (vs ISC015N06NM5ATMA1)
- AEC-Q101 qualified with 100% avalanche testing (vs Industrial-grade non-AEC parts)
Design Notes
Estimated: at TC = 25 °C, RthJC = 1.3 K/W gives a silicon ceiling of about 193 A. In a real PCB design with PG-TDSON-8-34 mounted on 1 sq-inch of 2 oz copper, RthJA is roughly 35-40 K/W, so continuous ID at TA = 25 °C is closer to 3-4 A. Designers must derate for PCB copper area, ambient temperature, and switching losses. Add thermal vias under the exposed pad and consider a top-side copper pour for high-current applications.
Keep the gate-driver loop area as small as possible, ideally within 5 mm of the gate and Kelvin source pins. Use a 4-layer PCB with a dedicated ground plane beneath the FET to minimize source-inductance ringing. Place a 10-100 nF ceramic bypass capacitor close to the gate-driver supply pin to provide peak gate-charge current during switching transitions.
Do not exceed VGS = ±20 V absolute maximum; stay within the datasheet-recommended gate-drive voltage (typically 10 V). Avoid continuous operation near SOA boundaries where RDS(on) drift from self-heating can cause thermal runaway. When using the body diode for freewheeling, derate for reverse-recovery losses at high switching frequencies, or add an external Schottky for hard-switched topologies.
Compliance Information
AEC-Q101 qualified (automotive-grade), MSL1 to 260 °C peak reflow, 100% avalanche tested, RoHS compliant Green Product per Infineon datasheet.
