IAUCN08S7L110ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L110ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L110ATMA1
IAUCN08S7L110ATMA1 - 80V 11mΞ© N-Channel MOSFET | Infineon
IAUCN08S7L110ATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7L110ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.41 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A | β |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W | β |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΞ© | β |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS_max] | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V_GS_th] | β |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Q_G_total] | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOSβ’ (Trench) | Trench MOSFET, silicon |
| MSL Level | [DATA_NEEDED: MSL level] | MSL 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | β |
| Automotive Qualified | Yes (AEC-Q101 expected per family) | β |
| Polarity | Single N-Channel | β |
| Configuration | Single | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| RoHS Compliance | β | Compliant (per Infineon product page) |