IAUZ18N10S5L420ATMA1 vs BSC019N08NS5ATMA1 Comparison
Detailed side-by-side comparison of IAUZ18N10S5L420ATMA1 by Infineon and BSC019N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 β ActiveInfineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ18N10S5L420ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 100V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 18 A | β |
| On-Resistance RDS(on) max at VGS=10V | 42 mΞ© | 1.9 mOhm |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.7 V to 2.7 V | β |
| Total Gate Charge (Qg) typ. | 8.5 nC | β |
| Power Dissipation (PD) at TC=25Β°C | 30 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| Technology | OptiMOS 5 trench | OptiMOS 5 (N-channel trench) |
| Configuration | Single with built-in diode | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at TA=25C | β | 28 A |
| Continuous Drain Current (ID) at TC=25C | β | 237 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| Gate Threshold Voltage VGS(th) typ | β | 3.0 V |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 214 W |
| Operating Temperature Range | β | -55 C to +150 C |
| Avalanche Rated | β | Yes |