IAUZ18N10S5L420ATMA1 vs IAUC120N06S5L015ATMA1 Comparison
Detailed side-by-side comparison of IAUZ18N10S5L420ATMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 β ActiveInfineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ18N10S5L420ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 100V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | 18 A | β |
| On-Resistance RDS(on) max at VGS=10V | 42 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.7 V to 2.7 V | β |
| Total Gate Charge (Qg) typ. | 8.5 nC | β |
| Power Dissipation (PD) at TC=25Β°C | 30 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TDSON-8-43 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount (exposed pad) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Technology | OptiMOS 5 trench | N-Channel MOSFET (OptiMOS 5) |
| Configuration | Single with built-in diode | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Continuous Drain Current (ID, Tc=25C) | β | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | β | 1.5 mΞ© |
| Gate Charge (Qg, typ) | β | 88 nC |
| Power Dissipation (PD, Tc=25C) | β | 167 W |
| Operating Temperature Range | β | -55C to +175C (Tj) |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Drain-Source On-State Resistance Test Conditions | β | VGS = 10 V, ID = 50 A |
| Typical Application | β | Automotive DC-DC, battery switches, motor drives |