IGLR70R270D2SXUMA1 vs ISC045N03L5SATMA1 Comparison
Detailed side-by-side comparison of IGLR70R270D2SXUMA1 by Infineon and ISC045N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGLR70R270D2SXUMA1
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ Active
Specification Comparison
| Parameter | IGLR70R270D2SXUMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.13 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 | — |
| Technology | Gallium Nitride (GaN) HEMT, enhancement-mode | OptiMOS 5 / Trench |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | 30 V |
| Continuous Drain Current (ID, Tc) | 7.3 A | — |
| Power Dissipation (PD, Tc) | 28 W | — |
| On-State Resistance (RDS(on), typ.) | 270 mΩ | — |
| Package | PG-TSON-8-8 (ThinPAK) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Drive | 0 to 12 V (enhancement-mode, internal gate diode) | — |
| Wafer Process | 200 mm (8-inch) GaN-on-Si | — |
| RoHS Status | Compliant | Compliant |
| Operating Temperature Range | -40C to +150C (junction) | -55 °C to +150 °C |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) | — |
| Part Number | — | ISC045N03L5SATMA1 |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |