IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
MPN: IGLR70R270D2SXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.08 | $30.80 |
| 100 | $2.74 | $274.00 |
| 500 | $2.41 | $1,205.00 |
| 1,000 | $2.13 | $2,130.00 |
IGLR70R270D2SXUMA1 Overview
A GaN FET (Gallium Nitride Field-Effect Transistor) is a wide-bandgap power semiconductor that uses a GaN-on-silicon heterojunction instead of silicon. Within the power-converter hierarchy, GaN FETs sit between silicon MOSFETs (slower, higher losses) and silicon carbide (SiC) MOSFETs (higher voltage, more expensive); CoolGaN™ specifically targets high-frequency, high-density switched-mode power supplies in the 100-700 V class.
The defining characteristics of this part are its 700 V drain-source blocking voltage, 270 mΩ typical RDS(on), and ultrafast switching capability enabled by GaN's absence of a body diode and small gate/output charges. The PG-TSON-8-8 (also referred to as ThinPAK in Infineon literature) is a chip-scale, bottom-source package that minimises parasitic source inductance and provides low thermal resistance from junction to PCB. It is produced on fully-automated 200 mm (8-inch) wafer lines, which translates into tight production tolerances and consistent parametric distributions.
Architecturally, CoolGaN™ G5 uses an integrated internal gate diode to simplify gate-drive design and to enable normally-off operation from a standard 0-12 V gate drive. The very low gate charge (Qg) and zero reverse-recovery charge (Qrr) permit hard-switched half-bridge operation at multi-hundred-kilohertz frequencies with substantially lower switching losses than silicon super-junction MOSFETs of similar RDS(on).
Typical applications include high-density AC-DC flyback and totem-pole PFC converters, 400 V EV onboard chargers, telecom and server SMPS, USB-PD adapters above 100 W, and photovoltaic micro-inverters. The wide 700 V rating specifically targets universal-mains (85-264 VAC) rectified-bus operation up to 400 V bus rails.
When designing with this part, place the gate driver within millimetres of the gate pin to contain the high di/dt loop, and route the source-return of the gate-driver supply directly to the bottom source pad to avoid common-source inductance that would otherwise slow switching and induce unwanted Vgs overshoot.
This page consolidates distributor pricing, in-family CoolGaN drop-in alternatives, and practical layout notes that complement (but do not replace) the manufacturer datasheet.
Drop-in alternatives for IGLR70R270D2SXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IGLR70R270D2SXUMA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IGLR70R200D2SXUMA1
✅ Drop-In✓ In Stock
$1.24 / Unit
View Datasheet →ISC045N03L5SATMA1
✅ Drop-In✓ In Stock
$0.51 / Unit
View Datasheet →ISC011N04NM7VATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →IPC50N04S5L5R5ATMA2
✅ Drop-In📋 Reference alternative (not in catalog)
IGLR70R270D2SXUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolGaN™ G5 |
| Technology | Gallium Nitride (GaN) HEMT, enhancement-mode |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 700 V |
| Continuous Drain Current (ID, Tc) | 7.3 A |
| Power Dissipation (PD, Tc) | 28 W |
| On-State Resistance (RDS(on), typ.) | 270 mΩ |
| Package | PG-TSON-8-8 (ThinPAK) |
| Mounting Type | Surface Mount |
| Gate Drive | 0 to 12 V (enhancement-mode, internal gate diode) |
| Wafer Process | 200 mm (8-inch) GaN-on-Si |
| RoHS Status | Compliant |
| Operating Temperature Range | -40C to +150C (junction) |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) |
IGLR70R270D2SXUMA1 Pin Configuration
| Pin 1 | S — Source (peripheral lead) |
| Pin 2 | G — Gate |
| Pin 3 | S — Source-sense (Kelvin connection for gate-drive return) |
| Pin 4 | D — Drain |
| Pin 5 | D — Drain |
| Pin 6 | S — Source (peripheral lead) |
| Pin 7 | S — Source (peripheral lead) |
| Pin 8 | S — Source (peripheral lead) |
Safe Operating Area (DC)
Typical Applications
IGLR70R270D2SXUMA1 is suitable for 7 applications: Totem-Pole Bridgeless PFC, High-Density AC-DC Flyback Adapter (USB-PD >100W), Telecom and Server SMPS (48 V Intermediate Bus), Solar Microinverter and String Inverter, EV Onboard Charger (OBC) PFC and DCDC Stage, Industrial Switched-Mode Power Supply (SMPS), LED Driver for High-Brightness Lighting.
Totem-Pole Bridgeless PFC
The IGLR70R270D2SXUMA1 is ideally suited as the slow leg (50/60 Hz line-frequency) pair of a totem-pole bridgeless PFC operating from universal-mains rectified 400 V bus rails. The 700 V VDS rating provides 75% margin above 400 V, and the 270 mΩ RDS(on) keeps conduction loss below 1 W per device at 3 kW. Compared to a silicon super-junction MOSFET, the GaN FET's zero Qrr eliminates the slow-leg reverse-recovery penalty that has historically limited bridgeless PFC efficiency above 200 W.
Recommended
High-Density AC-DC Flyback Adapter (USB-PD >100W)
In a 100-150 W USB-PD adapter built on an active-clamp flyback topology, the IGLR70R270D2SXUMA1 is used as the main switch on the 600 V / 400 V bus. Its 7.3 A continuous rating supports 100 W continuous output with adequate thermal margin, and the GaN switching frequency can be pushed above 200 kHz, shrinking the transformer by 40-50% versus a silicon-based 65 kHz design. The PG-TSON-8-8 bottom-source pad enables top-side cooling on a compact 1.5 cc adapter PCB.
Recommended
Telecom and Server SMPS (48 V Intermediate Bus)
The IGLR70R270D2SXUMA1 serves as the primary-side switch in a 600-800 W hard-switched half-bridge converter used for 48 V intermediate-bus converters (IBC) in hyperscale datacenters. Its zero Qrr permits high-frequency (>300 kHz) hard-switching without the reverse-recovery-induced body-diode losses that plague silicon MOSFETs, raising peak efficiency above 97.5%. The 700 V rating tolerates rectified 230 VAC mains plus transient ring-up during load steps, an essential margin for telecom rectifier compliance.
Recommended
Solar Microinverter and String Inverter
In a 600-1500 W microinverter, the IGLR70R270D2SXUMA1 GaN transistor operates in the active-bridge of the DC-DC boost stage feeding the 400 V inverter bus. The wide 700 V rating tolerates wide PV-input voltage swings, while the 270 mΩ RDS(on) keeps conduction loss below 1% even at full MPPT current. GaN's ability to switch at high frequency allows the use of compact planar magnetics, which is critical for the hermetically-sealed IP67 enclosure typical of outdoor PV microinverters.
Recommended
EV Onboard Charger (OBC) PFC and DCDC Stage
In a 3.3-11 kW EV onboard charger, the IGLR70R270D2SXUMA1 functions as a switch in the totem-pole PFC and/or the isolated DCDC primary stage, where 800 V EV-bus architectures drive a hard requirement on switch blocking voltage. Although a single 700 V part is at the lower end of 800 V bus stress, it can be paralleled or used in the lower-voltage 400 V bus OBC designs. The GaN switching speed keeps OBC peak efficiency above 96%, directly extending vehicle range per AC-charge cycle.
Recommended
Industrial Switched-Mode Power Supply (SMPS)
The IGLR70R270D2SXUMA1 is deployed as the main switching element in a 600-1200 W industrial SMPS used for factory automation, CNC machines, and programmable-logic-controller backplanes. The 700 V VDS rating handles universal-mains 85-264 VAC input with full derating margin, while the 270 mΩ RDS(on) and GaN switching capability enable a >250 kHz operation frequency, allowing smaller inductors and capacitors in the LC filter. The PG-TSON-8-8 ThinPAK package offers strong mechanical robustness for industrial vibration profiles.
Recommended
LED Driver for High-Brightness Lighting
In a high-brightness LED driver (500 W to 2 kW architectural or horticultural lighting), the IGLR70R270D2SXUMA1 serves as the PFC-stage switch and the resonant LLC half-bridge primary. The high-frequency switching capability shrinks the magnetics and EMI-filter passives dramatically, allowing the driver to fit inside slim linear LED fixtures. The GaN FET's lack of reverse-recovery charge reduces ringing and EMI, simplifying compliance with CISPR 15 conducted and radiated limits.
Recommended
Recommended Products Summary
Engineering reference data for IGLR70R270D2SXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGLR70R200D2SXUMA1 | ISC045N03L5SATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) |
| Package | PG-TSON-8-8 (ThinPAK) | PG-TSON-8-8 (ThinPAK) - same | PG-TSDSON-8 - same outline family | PG-TSDSON-8 - same outline family |
| Technology | GaN HEMT (CoolGaN G5) | GaN HEMT (CoolGaN G5) | Silicon MOSFET (OptiMOS 5) | Silicon MOSFET (OptiMOS 7) |
| Drain-Source Voltage (VDS) | 700 V | 700 V | 30 V | 40 V |
| Typical RDS(on) | 270 mΩ | 200 mΩ (-26%) | 4.5 mΩ (-98% relative) | 1.1 mΩ (-99% relative) |
| Continuous Drain Current (Tc) | 7.3 A | 9 A (typ.) | 45 A | 100 A |
| Reverse Recovery Charge (Qrr) | 0 nC | 0 nC | non-zero (silicon body diode) | non-zero (silicon body diode) |
| Best-Fit Application | Universal-mains PFC / flyback 100-700 W | Universal-mains PFC 1-3 kW | 12-24 V buck/load switch | 48 V bus / eFuse |
Key Differentiators
- Zero reverse-recovery charge enables hard-switched half-bridge operation above 200 kHz (vs ISC045N03L5SATMA1)
- Highest voltage rating in Infineon's 8-pin source-bottom family (vs ISC011N04NM7VATMA1)
- Lower RDS(on) variant available in identical footprint for higher-power designs (vs IGLR70R200D2SXUMA1)
Design Notes
Minimise the high-frequency power loop by placing input bypass capacitors within 2-3 mm of the drain and source pads. The bottom-source pad of the PG-TSON-8-8 ThinPAK package is the primary thermal path - use a flooded copper pour on the top layer (at least 1 oz copper, recommended 2 oz) directly beneath the device and stitch it with 8-12 thermal vias to an inner-layer ground plane. Keep the gate-drive loop (gate-driver output, gate resistor, gate pin, kelvin-source pin) under 5 mm total length to suppress Vgs ringing.
Estimated: at 200 kHz hard-switched operation with VIN=400 V and a 5 A drain current, the IGLR70R270D2SXUMA1 dissipates approximately 1.4 W (270 mΩ conduction) plus switching losses. Without sufficient thermal vias and copper pour, junction temperature will exceed 125 C within seconds. Always derate against the Infineon Zth curves published in the CoolGaN G5 datasheet and avoid mounting the part over signal traces that interrupt the bottom thermal pad.
Use a dedicated gate-source resistor (typically 10 kΩ) to define the off-state gate voltage and prevent inadvertent turn-on from Miller current during high dv/dt transitions. A small ferrite bead or series gate resistor (5-15 Ω) dampens gate-loop ringing. The internal gate diode inside CoolGaN G5 simplifies the negative-bias requirement but does not eliminate the need for tight gate-loop layout.
Estimated junction temperature rise above 25 C ambient, at 1.5 W continuous dissipation on a standard JEDEC 1s0p test board, is approximately 75 C - well within the 150 C maximum rating. In a real adapter with flooded copper, this same 1.5 W produces only a 30-40 C rise, enabling higher power density without active cooling. Always verify with thermocouple measurements on a fully-assembled PCB; thermal simulation alone is insufficient for safety-critical automotive or medical designs.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial and consumer power-conversion applications. Halogen-free per Infineon CoolGaN G5 family documentation.
