IPB014N06NATMA1 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of IPB014N06NATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC076N04NDATMA1

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 βœ“ Active

Specification Comparison

Parameter IPB014N06NATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.10 $0.82
Transistor Polarity N-Channel β€”
Drain-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) at Ta 34 A β€”
Continuous Drain Current (ID) at Tc 180 A β€”
Power Dissipation (PD) at Ta 3 W β€”
Power Dissipation (PD) at Tc 214 W β€”
On-Resistance RDS(on) max 1.4 mΞ© at VGS=10V 7.6 mOhm
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 4 V (max, typical)
Operating Junction Temperature -55 Β°C to +175 Β°C -55 C to +175 C
Package PG-TO263-7 (D2PAK-7) β€”
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 (trench-gate) Trench MOSFET (OptiMOS 3)
Avalanche Rating 100% avalanche tested β€”
Qualification JEDEC qualified for target applications β€”
Primary Application Synchronous rectification, motor control β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 3
Configuration β€” Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max β€” 40 V
Continuous Drain Current (ID) β€” 20 A (Tc)
Power Dissipation (Ta) β€” 2.3 W
Power Dissipation (Tc) β€” 65 W
Qgd/Qgs Ratio β€” < 0.8 (high shot-through immunity)
Package / Case β€” PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free β€” Compliant (Pb-free plating)
FET Type β€” 2x N-Channel MOSFET array

Datasheets & Resources

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