IPB014N06NATMA1 - 60V 180A OptiMOS 5 N-Channel MOSFET | Infineon
MPN: IPB014N06NATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.1 | $4.10 |
| 10 | $3.65 | $36.50 |
| 100 | $3.22 | $322.00 |
| 500 | $2.85 | $1,425.00 |
| 1,000 | $2.48 | $2,480.00 |
| 3,000 | $2.1 | $6,300.00 |
IPB014N06NATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between the drain and source terminals, enabling high-efficiency power conversion at frequencies far beyond what bipolar transistors can achieve. N-Channel MOSFETs such as this Infineon device form the workhorse of the synchronous rectifier stage in modern switch-mode power supplies (SMPS), where two MOSFETs alternately commutate current through the transformer or inductor. Within the broader taxonomy, MOSFETs belong to discrete semiconductors, sit beneath the power-management IC hierarchy, and complement gate drivers, PWM controllers, and DC-DC converters in any switched-mode power topology.
Key features include 1.4 mΩ maximum RDS(on) at VGS=10V (one of the lowest on-resistances in the 60V OptiMOS 5 family), a low gate charge Qg (typical values are published in the datasheet's dynamic characteristics table), and superior thermal resistance owing to the D2PAK-7 footprint that allows substantial copper area on the PCB to act as a heatsink. The device is qualified to JEDEC standards for the target applications, and the JEDEC-qualified silicon guarantees drop-in compatibility with industry-standard 60V synchronous-rectifier sockets.
Architecturally, the OptiMOS 5 generation uses Infineon's latest trench-gate technology, which shrinks the cell pitch and reduces both RDS(on)*Area figure-of-merit and gate charge compared to prior generations. This reduction directly lowers conduction and switching losses, which is critical for high-frequency (300 kHz to 1 MHz) LLC, full-bridge, and active-clamp forward converters where every milliohm of RDS(on) translates into measurable efficiency loss and thermal stress.
Typical applications include 48V-to-12V intermediate-bus DC-DC converters for telecom and server equipment, synchronous rectification stages in isolated AC-DC and DC-DC converters, high-current motor drive half-bridges in robotics and e-mobility, hot-swap and OR-ing controllers in distributed power systems, and battery protection circuits in lithium-ion packs. The wide -55°C to +175°C operating-junction-temperature range also supports automotive under-hood and industrial automation deployments.
When designing with the IPB014N06NATMA1, pay close attention to gate-drive voltage: full enhancement requires VGS of 10V, and partial enhancement at 4.5V can increase RDS(on) by 2x or more. Place a 1Ω gate resistor and a gate-source pull-down to prevent accidental turn-on from Miller-capacitance-induced dv/dt transients in half-bridge topologies. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IPB014N06NATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB014N06NATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Avalanche Rating.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB014N06N
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
BSC076N04NDATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →ISC045N03L5SATMA1
✅ Drop-In✓ In Stock
$0.51 / Unit
View Datasheet →IPB60R040CFD7ATMA1
✅ Drop-In✓ In Stock
$5.19 / Unit
View Datasheet →IPD65R380E6ATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →IPC50N04S5L5R5ATMA1
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.62 / Unit
View Datasheet →IPB014N06NATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta | 34 A |
| Continuous Drain Current (ID) at Tc | 180 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 214 W |
| On-Resistance RDS(on) max | 1.4 mΩ at VGS=10V |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-TO263-7 (D2PAK-7) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 5 (trench-gate) |
| Avalanche Rating | 100% avalanche tested |
| Qualification | JEDEC qualified for target applications |
| Primary Application | Synchronous rectification, motor control |
IPB014N06NATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate control input; drive to 10V for full enhancement |
| Pin 2 | Drain (D) — Drain terminal; electrically bonded to the metal tab/backside |
| Pin 3 | Source (S) — Source terminal; power return path |
| Pin 4 | NC — Not connected (per datasheet mechanical drawing) |
| Pin 5 | NC — Not connected (per datasheet mechanical drawing) |
| Pin 6 | NC — Not connected (per datasheet mechanical drawing) |
| Pin 7 | NC — Not connected (per datasheet mechanical drawing) |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IPB014N06NATMA1 is suitable for 7 applications: 48V Telecom-Bus Synchronous Rectifier, High-Current BLDC Motor Drive Half-Bridge, Isolated DC-DC Converter Secondary-Side Rectifier, Hot-Swap and OR-ing Controller, Lithium-Ion Battery Pack Protection, Industrial Automation and Robotics Drive, Solar Inverter Power Stage.
48V Telecom-Bus Synchronous Rectifier
The IPB014N06NATMA1 is purpose-built for synchronous rectification in 48V telecom intermediate-bus converters. Its 60V VDS breakdown comfortably covers the 48V nominal with margin for transient spikes, and the 1.4 mΩ RDS(on) at VGS=10V minimizes I²R conduction loss across the secondary-side rectifier. At 30A output current the MOSFET dissipates only ~1.3W, eliminating the need for a dedicated heatsink in well-vented chassis designs. Compared to a Schottky diode stage, the synchronous-rectifier configuration saves 4-6% efficiency at full load and reduces PCB temperature rise.
Recommended
High-Current BLDC Motor Drive Half-Bridge
In BLDC and PMSM motor-drive half-bridge stages, IPB014N06NATMA1's 180A TC-rated continuous drain current supports multi-kilowatt inverter designs up to 48V battery packs. The 60V breakdown provides 25% voltage margin over 48V nominal, and the 1.4 mΩ RDS(on) keeps conduction loss low at high torque currents. The part's -55°C to +175°C junction-temperature range covers automotive under-hood and industrial cabinet environments, while the D2PAK-7 footprint allows substantial copper heatsink area for sustained 100A+ motor currents.
Recommended
Isolated DC-DC Converter Secondary-Side Rectifier
The IPB014N06NATMA1's 60V breakdown and ultra-low 1.4 mΩ RDS(on) make it an excellent synchronous rectifier on the secondary side of isolated full-bridge, LLC, and active-clamp forward DC-DC converters. At switching frequencies of 200 kHz to 500 kHz the OptiMOS 5's low Qg and Qoss keep switching loss minimal, supporting converter efficiencies above 96% in 48V-to-12V and 48V-to-5V bus-converter designs. The 214W TC-rated power dissipation envelope allows sustained 100A+ rectifier current without thermal limiting.
Recommended
Hot-Swap and OR-ing Controller
In -48V distributed-power hot-swap and OR-ing applications, IPB014N06NATMA1 acts as the low-side switching element or as the high-side OR-ing FET. The 60V VDS comfortably exceeds the -48V bus voltage, and the 1.4 mΩ RDS(on) minimizes voltage drop across the OR-ing path during normal operation. The part's 100% avalanche-tested rating per Infineon's OptiMOS quality program provides extra margin for transient inrush events when hot-plugging capacitive loads.
Recommended
Lithium-Ion Battery Pack Protection
Within lithium-ion battery-pack protection circuits, IPB014N06NATMA1 serves as the low-side disconnect switch for packs up to 48V nominal. The 180A TC-rated continuous drain current supports multi-kWh residential and small-commercial battery systems, while the 1.4 mΩ RDS(on) keeps voltage drop below 50 mV at 35A discharge - critical for accurate state-of-charge measurement. The -55°C to +175°C operating junction temperature range covers cold-weather EV charging and hot-climate stationary storage environments.
Recommended
Industrial Automation and Robotics Drive
In 24V-48V industrial automation and robotics servo-drive designs, IPB014N06NATMA1 handles the high-current half-bridge switching required for precision motor torque control. The 60V breakdown covers 48V industrial bus voltage with margin, and the 1.4 mΩ RDS(on) reduces I²R loss during continuous high-torque operation. The part's JEDEC qualification and -55°C to +175°C temperature range ensure long-term reliability in factory-floor environments, while the D2PAK-7 footprint allows direct PCB-mount heatsinking via copper pour.
Recommended
Solar Inverter Power Stage
Within small-to-medium residential solar inverter power stages, IPB014N06NATMA1 supports the 48V battery-side synchronous rectification and the 60V-class boost-stage switching. The 1.4 mΩ RDS(on) at VGS=10V minimizes conduction loss across the high-current battery interface, while the OptiMOS 5 technology's low gate charge enables efficient switching at 50-100 kHz PWM frequencies. The 214W TC power-dissipation envelope accommodates the continuous high-current paths typical of grid-tie inverter designs.
Recommended
Recommended Products Summary
Engineering reference data for IPB014N06NATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB014N06N | BSC076N04NDATMA1 | ISC045N03L5SATMA1 | IPB60R040CFD7ATMA1 | IPD65R380E6ATMA1 | IPC50N04S5L5R5ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-7 (D2PAK-7) | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same |
| VDS Breakdown Voltage | 60 V | 60 V (same) | 40 V | 30 V | 600 V | 650 V | 40 V | 60 V |
| RDS(on) max at VGS=10V | 1.4 mΩ | 1.4 mΩ (same) | 7.6 mΩ | 4.5 mΩ | 40 mΩ | 380 mΩ | 5.5 mΩ | 1.5 mΩ |
| Technology Generation | OptiMOS 5 | OptiMOS 5 (same) | OptiMOS 5 | OptiMOS 5 | CoolMOS CFD7 | CoolMOS E6 | OptiMOS 5 | OptiMOS 5 |
| Operating Junction Temperature | -55 °C to +175 °C | -55 °C to +175 °C (same) | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +175 °C | -55 °C to +175 °C |
| Primary Application | Synchronous rectification, motor control | Same as IPB014N06NATMA1 | Synchronous rectification (low-voltage) | Synchronous rectification (low-voltage) | High-voltage PFC / LLC stages | High-voltage PFC / flyback | Synchronous rectification (low-voltage) | Synchronous rectification |
Key Differentiators
- 1.4 mΩ ultra-low RDS(on) in 60V OptiMOS 5 family (vs BSC076N04NDATMA1)
- 180A TC-rated continuous drain current (vs ISC045N03L5SATMA1)
- OptiMOS 5 low gate charge for high-frequency operation (vs IPD65R380E6ATMA1)
Design Notes
At maximum rated conditions (ID=180A, VDS=60V), power dissipation can reach the 214W TC-rated envelope. Estimated: with 30A continuous load at VDS conduction loss dominating, the D2PAK-7 footprint requires at least 25 cm² of 2 oz copper pour to maintain junction temperature below +150°C in 25°C ambient. Use thermal vias (0.3mm diameter, 1mm pitch) directly under the exposed tab to inner copper planes for additional heat spreading. Without adequate copper area, the device will derate rapidly above 50A continuous load.
Place the gate-drive return path (source-sense connection) as close to the package source pin as possible to avoid gate-loop inductance that can cause ringing and dv/dt-induced turn-on in half-bridge topologies. Estimated: a 10mm source-trace at 1 oz copper adds ~10 nH inductance, which combined with the gate-drain Miller capacitance can induce 5-10V VGS spikes during fast switching transitions. Use a kelvin-source connection when the package provides one, or place the gate resistor directly across the gate and source pins.
Do not operate IPB014N06NATMA1 with VGS below 6V in high-current applications: at VGS=4.5V, RDS(on) can rise to 2x or more of the datasheet 10V spec, doubling conduction loss and potentially causing thermal runaway. Always verify gate-drive voltage under worst-case load conditions, including bootstrap-capacitor droop in half-bridge high-side drive. The part's maximum VGS rating is typically +/-20V - exceeding this destroys the gate oxide. A 10V gate-clamp Zener provides insurance against driver fault conditions.
Solder the exposed metal tab directly to a copper heatsink pad of at least the same footprint as the D2PAK-7 body, with multiple thermal vias (recommended: 9-16 vias in a 3x3 or 4x4 grid) connecting to inner-plane heatsink layers. The drain is electrically bonded to this tab, so the heatsink pad must be either left floating, connected to the drain net, or isolated with thermal interface material if the heatsink is chassis-grounded. Stencil aperture for the tab should be slightly oversized (typically 1.0-1.2 ratio to pad) to ensure adequate solder volume and avoid voids.
In hard-switched half-bridge topologies, the IPB014N06NATMA1's high dv/dt (typically 5-10 kV/µs) can inject displacement current through the drain-gate Miller capacitance into the gate-drive network, potentially causing shoot-through if the high-side and low-side MOSFETs turn on simultaneously. Include dead-time control in the gate-driver circuit (typical 100-300 ns) and consider a 1Ω gate-source resistor to dampen parasitic ringing. For very high dv/dt applications, a -3V to -5V negative gate-bias supply on the off-state improves noise immunity.
Compliance Information
RoHS and REACH compliance per Infineon product page. JEDEC-qualified per datasheet. Not AEC-Q100 qualified - check IPB014N06N automotive-grade variants if needed. Conflict-minerals compliance per Infineon supply-chain disclosures.
