IPB019N08N3GATMA1 vs IRF1310NSTRLPBF Comparison
Detailed side-by-side comparison of IPB019N08N3GATMA1 by Infineon and IRF1310NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΞ© OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 β Active
Specification Comparison
| Parameter | IPB019N08N3GATMA1 | IRF1310NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.74 | $0.84 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (Vdss) | 80 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 180 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 300 W | β |
| On-Resistance RDS(on) Max @ VGS=10V | 1.9 mΞ© | β |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V | β |
| Drive Voltage (Rds On Max) | 6 V, 10 V | β |
| Total Gate Charge (Qg) @ VGS=10V | 206 nC | β |
| Input Capacitance (Ciss) | 14.2 nF | β |
| Output Capacitance (Coss) | 3.84 nF | β |
| Reverse Transfer Capacitance (Crss) | 3.84 nF | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55C to +175C |
| Package | PG-TO263-7 (D2PAK-6, surface mount) | D2PAK (TO-263AB) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 42 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 36 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | 73.3 nC |
| Power Dissipation (PD) at TC=25C | β | 160 W |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Built-in Diode | β | Yes (intrinsic body diode) |
| Lead-Free / RoHS | β | Yes (PBF suffix) |
| Configuration | β | Single with built-in diode |