IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK
MPN: IRF1310NSTRLPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.1 | $550.00 |
| 1,000 | $0.95 | $950.00 |
| 3,000 | $0.84 | $2,520.00 |
Drop-in alternatives for IRF1310NSTRLPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFR1310PBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRF1310NPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFB4110PBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βIRFB4310PBF
β Drop-Inβ In Stock
$1.95 / Unit
View Datasheet βIRFB4710PBF
β Drop-Inπ Reference alternative (not in catalog)
STB120NF10T4
β Drop-Inπ Reference alternative (not in catalog)
AUIRF1324S-7P
β Drop-Inπ Reference alternative (not in catalog)
IRF1310NSTRLPBF Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm |
| Total Gate Charge (Qg) | 73.3 nC |
| Power Dissipation (PD) at TC=25C | 160 W |
| Power Dissipation (PD) at TA=25C | 3.8 W |
| Operating Temperature Range | -55C to +175C |
| Package | D2PAK (TO-263AB) |
| Mounting Type | Surface Mount |
| Technology | IR MOSFET (HEXFET) |
| Built-in Diode | Yes (intrinsic body diode) |
| Lead-Free / RoHS | Yes (PBF suffix) |
| Configuration | Single with built-in diode |
IRF1310NSTRLPBF Pin Configuration
| Pin 1 | Gate β Gate drive input (10V VGS required for full enhancement) |
| Pin 2 | Drain β Drain connection, internally bonded to metal tab |
| Pin 3 | Source β Source connection |
| Pin Tab | Drain β Drain terminal (electrically connected to pin 2; also serves as thermal pad) |
Safe Operating Area (TC = 25C)
Typical Applications
IRF1310NSTRLPBF is suitable for 6 applications: Secondary-Side Synchronous Rectification, DC Motor Drive (H-Bridge), Uninterruptible Power Supply (UPS) Battery Switch, Automotive 12 V/24 V Load Switch, Class-D Audio Amplifier Output Stage, Solar Charge Controller MPPT Switch.
Secondary-Side Synchronous Rectification
The IRF1310NSTRLPBF's 36 mOhm RDS(on) and 100 V VDS rating make it an effective synchronous rectifier on the secondary side of 48 V telecom and industrial bus converters. In a typical forward or bridge converter topology, the MOSFET replaces the rectifier diode on the low-side, reducing conduction loss from approximately 1 W (Schottky diode at 30 A) to under 0.5 W at 50 C case temperature. The 73.3 nC Qg is acceptable for switching frequencies up to 200 kHz; above that, gate-drive losses become significant. Source-connected heat-sinking via the D2PAK tab provides thermal dissipation without an external heatsink at moderate currents.
Recommended
DC Motor Drive (H-Bridge)
In a 24 V brushed DC motor H-bridge, the IRF1310NSTRLPBF serves as the four switching elements, handling continuous motor currents up to 42 A at TC = 25 C. Its 100 V VDS rating provides 4x headroom above the 24 V supply, comfortably absorbing inductive flyback transients from motor winding inductance. The 36 mOhm RDS(on) limits conduction loss to roughly 16 W at 20 A continuous, which the D2PAK tab can dissipate with a 2-3 square-inch copper pour. A gate-driver IC such as the IRS2104STRPBF is recommended for fast switching transitions and shoot-through protection. PWM frequencies up to 25 kHz are practical before gate-drive losses dominate.
Recommended
Uninterruptible Power Supply (UPS) Battery Switch
The IRF1310NSTRLPBF is well-suited as the low-side disconnect switch between a 48 V battery stack and the inverter section of a UPS. Its 42 A continuous rating handles inverter peak loads, while the 100 V VDS covers transient over-voltage during battery equalization or load-step events. The built-in body diode provides natural freewheeling during switch turn-off, eliminating the need for an external anti-parallel diode. Low RDS(on) of 36 mOhm minimizes voltage drop during normal operation, preserving battery runtime. The D2PAK package allows automated SMT assembly and provides adequate thermal performance when mounted on sufficient copper area.
Recommended
Automotive 12 V/24 V Load Switch
In automotive load-dump and transient environments, the IRF1310NSTRLPBF's 100 V VDS rating protects against inductive kick from solenoids, motors, and relay coils commonly found in body control modules. Its 42 A continuous current handles high-power loads such as fuel pumps, cooling fans, and seat heaters. While the standard IRF1310NSTRLPBF is not AEC-Q100 qualified, the IRF1310NSTRLPBF can serve as a cost-effective option for under-hood applications operating below 60 V. The 36 mOhm RDS(on) keeps conduction loss manageable in always-on circuits, and the D2PAK package withstands automotive thermal-cycling profiles when properly soldered to a thermal via array.
Recommended
Class-D Audio Amplifier Output Stage
The IRF1310NSTRLPBF can be used as the output switch in a Class-D audio amplifier half-bridge operating from a +/-35 V split rail. Its 100 V VDS handles the full rail-to-rail switching transient, while the 36 mOhm RDS(on) reduces conduction loss and improves amplifier efficiency to over 90% at full power. The 73.3 nC Qg is acceptable for audio-band switching frequencies of 250-500 kHz, where dead-time control via gate driver selection minimizes crossover distortion. For higher-power amplifiers (>500 W), consider paralleling two IRF1310NSTRLPBF devices per switch position to halve effective RDS(on) and share thermal load.
Recommended
Solar Charge Controller MPPT Switch
In a Maximum Power Point Tracking (MPPT) solar charge controller, the IRF1310NSTRLPBF serves as the main switching element in a buck or buck-boost topology handling PV panel voltages up to 60 V (24V nominal panel strings). The 100 V VDS rating comfortably exceeds MPPT input transients during partial shading events. Its 42 A continuous current supports PV panel short-circuit currents up to 30 A with margin. The 36 mOhm RDS(on) yields >97% efficiency at typical 20 A operating current, while the D2PAK package simplifies thermal management when mounted to the controller's chassis or heatsink. Pair with a UCC28951 controller for peak MPPT performance.
Recommended
Recommended Products Summary
Engineering reference data for IRF1310NSTRLPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR1310PBF | IRF1310NPBF | IRFB4110PBF | STB120NF10T4 | AUIRF1324S-7P |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | Infineon |
| Package | D2PAK (TO-263AB) | DPAK (TO-252) | TO-220 | TO-220 | D2PAK (TO-263) | D2PAK (TO-263) |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V | 40 V |
| Continuous Drain Current (ID) | 42 A | 42 A | 42 A | 120 A | 120 A | [DATA_NEEDED] |
| On-Resistance RDS(on) max | 36 mOhm | 36 mOhm | 36 mOhm | 5.8 mOhm | 5.4 mOhm | [DATA_NEEDED] |
| Total Gate Charge (Qg) | 73.3 nC | 73.3 nC | 73.3 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (TC=25C) | 160 W | 80 W | 160 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Through Hole | Surface Mount | Surface Mount |
| Built-in Body Diode | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lower RDS(on) than predecessors at same VDS class (vs IRF540NSTRLPBF)
- Higher current than surface-mount DPAK alternatives (vs IRFR1310PBF (DPAK))
- Lower RDS(on) than cross-brand ST alternative at lower cost-tier (vs STB120NF10T4)
- 100V VDS for 48V telecom/industrial margin (vs AUIRF1324S-7P (40V))
Design Notes
Estimated: at ID=20A and RDS(on)=36mOhm, conduction loss is roughly 14.4W. With the D2PAK junction-to-ambient thermal resistance of approximately 62 C/W on a 1 square-inch copper pour (JEDEC EIA/JESD51 standard board), the junction temperature rise is around 14.4W x 62 C/W = 893 C/W above ambient - clearly exceeding the 175C junction limit. Therefore, at 20A the IRF1310NSTRLPBF requires at least 3-4 square inches of copper pour, an external heatsink, or forced-air cooling to stay within thermal limits. Input values: ID=20A, RDS(on)=0.036 ohm, theta_JA=62 C/W, TA=25C. Always compute junction temperature using TJ = TA + (PD x theta_JA) before deploying.
The D2PAK tab is electrically connected to the drain (pin 2). When using the IRF1310NSTRLPBF on a heatsink, an insulating thermal interface material (TIM) such as a Bergquist Sil-Pad or 3M thermal tape is required to isolate the drain from the heatsink. Otherwise, the heatsink must be at drain potential, which complicates mechanical design and creates a potential safety hazard. Place the gate-drive traces away from the drain tab to minimize parasitic coupling, and keep the gate-source loop as small as possible to suppress ringing. A gate-source resistor of 10-100 kOhm is recommended to prevent accidental turn-on from dV/dt-induced Miller current.
Do not drive the IRF1310NSTRLPBF gate directly from a 3.3V or 5V microcontroller GPIO: the gate threshold voltage (VGS(th)) is typically 2-4V, but full enhancement to the datasheet 36 mOhm RDS(on) requires VGS = 10V. At VGS = 5V the on-resistance can be 2-5x higher, causing excessive heat and possible thermal runaway. Always use a dedicated gate-driver IC (e.g., TC4420, IRS2003, IRS2104) capable of sourcing/sinking 1-2A peak gate current for fast switching transitions. Additionally, do not exceed the maximum VGS rating of +/-20V; use a 12V Zener gate protection clamp if the gate-driver supply is unregulated.
For switching-frequency selection, the IRF1310NSTRLPBF's 73.3 nC Qg means gate-drive loss per cycle is Qg x Vdrive = 73.3 nC x 10V = 0.733 uJ. At 100 kHz, this becomes 73 mW per FET - negligible compared to conduction loss at high current. However, at 500 kHz gate-drive loss rises to 366 mW, and switching loss (proportional to frequency) becomes the dominant loss component. Choose switching frequency such that total losses (conduction + switching + gate-drive) are minimized, typically 50-200 kHz for this device in a 100W-class converter.
Compliance Information
RoHS and REACH compliant per PBF suffix. Standard part is not AEC-Q100 qualified; for automotive applications requiring AEC-Q100, contact Infineon about automotive-graded variants in the IRF1310N family.
