IPB019N08N3GATMA1 vs IRF4905LPBF Comparison
Detailed side-by-side comparison of IPB019N08N3GATMA1 by Infineon and IRF4905LPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΞ© OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 β ActiveInfineon
IRF4905LPBF
IRF4905LPBF - P-Ch -55V 74A 20mOhm HEXFET MOSFET | Infineon
IRF4905LPBF β ActiveSpecification Comparison
| Parameter | IPB019N08N3GATMA1 | IRF4905LPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.74 | $0.98 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (Vdss) | 80 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 180 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 300 W | β |
| On-Resistance RDS(on) Max @ VGS=10V | 1.9 mΞ© | β |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V | β |
| Drive Voltage (Rds On Max) | 6 V, 10 V | β |
| Total Gate Charge (Qg) @ VGS=10V | 206 nC | β |
| Input Capacitance (Ciss) | 14.2 nF | β |
| Output Capacitance (Coss) | 3.84 nF | β |
| Reverse Transfer Capacitance (Crss) | 3.84 nF | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-TO263-7 (D2PAK-6, surface mount) | TO-262 (I2PAK), through-hole, 3-pin |
| Mounting Type | Surface Mount | Through Hole |
| RoHS Status | Compliant | β |
| Polarity | β | P-Channel |
| Drain-Source Voltage (Vds) | β | -55 V |
| Continuous Drain Current (Id) @ Tc=25C | β | -74 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ Vgs=-10V | β | 20 mOhm |
| Gate Threshold Voltage Vgs(th) typ | β | [DATA_NEEDED: Vgs(th) typical] |
| Gate-Source Voltage (Vgs) max | β | Β±20 V |
| Total Power Dissipation (Ptot) @ Tc=25C | β | 200 W |
| Operating Junction Temperature | β | -55C to +150C |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC value] |
| Rise Time (tr) typ | β | [DATA_NEEDED: rise time] |
| Fall Time (tf) typ | β | [DATA_NEEDED: fall time] |
| Lead-Free / RoHS | β | Yes (PbF suffix) |
| Avalanche Rated | β | Yes |