IPB110P06LMATMA1 vs IRF1018EPBF Comparison
Detailed side-by-side comparison of IPB110P06LMATMA1 by Infineon and IRF1018EPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB110P06LMATMA1 | IRF1018EPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.31 | $0.38 |
| FET Type | P-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | HEXFET (Power MOSFET) |
| Drain-Source Voltage (VDS) | -60 V | β |
| Continuous Drain Current (ID) at TC=25C | -100 A | β |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | β |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | β |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | β |
| Gate-Source Voltage (VGS max) | +/-20 V | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | -55 C to +175 C (Tj) |
| Package / Case | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | β |
| Mounting Type | Surface Mount | Through Hole |
| Supplier Device Package | PG-TO263-3-2 | β |
| Gate Drive Level | Logic-level compatible | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Drain-Source Voltage (Vdss) | β | 60 V |
| Continuous Drain Current (Id) at Tc=25C | β | 79 A |
| Rds(on) max at Vgs=10V | β | 8.4 mOhm |
| Total Gate Charge (Qg) | β | 46 nC |
| Gate Drive Voltage (Vgs) | β | 10 V (optimized; +/-20 V max) |
| Power Dissipation (Pd) at Tc=25C | β | 110 W |
| Package | β | TO-220AB (through-hole, 3-lead) |
| Qualification | β | JEDEC (Industrial market) |
| Lead-Free (PBF suffix) | β | Yes |
| Pin Count | β | 3 (Gate, Drain, Source) |