IPB110P06LMATMA1 vs IRF1018EPBF Vergleich
Detaillierter Direktvergleich von IPB110P06LMATMA1 von Infineon und IRF1018EPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB110P06LMATMA1 | IRF1018EPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,31 | $0,38 |
| FET Type | P-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | HEXFET (Power MOSFET) |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC=25C | -100 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| Betriebstemperaturbereich | -55 C to +175 C (TJ) | -55 C to +175 C (Tj) |
| Gehäuse / Bauform | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| Montageart | Surface Mount | Through Hole |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 79 A |
| Rds(on) max at Vgs=10V | — | 8.4 mOhm |
| Total Gate Charge (Qg) | — | 46 nC |
| Gate Drive Voltage (Vgs) | — | 10 V (optimized; +/-20 V max) |
| Power Dissipation (Pd) at Tc=25C | — | 110 W |
| Gehäuse | — | TO-220AB (through-hole, 3-lead) |
| Qualification | — | JEDEC (Industrial market) |
| Lead-Free (PBF suffix) | — | Yes |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |