IPB60R280P7ATMA1 vs IPL60R065C7AUMA1 Comparison

Detailed side-by-side comparison of IPB60R280P7ATMA1 by Infineon and IPL60R065C7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB60R280P7ATMA1 IPL60R065C7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.88 $2.95
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 (600 V) —
Transistor Type N-Channel MOSFET —
Technology Superjunction (SJ) —
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 12 A 29 A
On-Resistance R_DS(on) max (V_GS=10V) 280 mOhm —
Gate-Source Threshold V_GS(th) typ 3.5 V —
Power Dissipation P_D (T_C=25°C) 53 W —
Package PG-TO263-3 (D2PAK) —
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 + Tab) —
Operating Temperature Range -55 °C to +150 °C (T_j max) -55 °C to +150 °C (T_J)
Configuration Single N-Channel —
RoHS Status Compliant Compliant with Exemption
Lead-Free Yes —
Generation 7th Gen CoolMOS (successor to P6) —
Series — CoolMOS C7
Part Status — Active
FET Type — N-Channel
Process Technology — CoolMOS C7 (Superjunction)
Maximum Drain-Source Voltage (V_DS) — 600 V
On-Resistance (R_DS(on), typ., V_GS=10V) — 65 mΩ
Maximum Power Dissipation (P_D, T_C=25°C) — 180 W
Gate-Source Voltage (V_GS, max) — ±20 V
Gate-Source Threshold (V_GS(th), typ.) — 3.5 V
Package / Case — PG-VSON-4-1 (Source-Down)
Automotive Qualified (AEC-Q101) — No
Total Gate Charge (Q_G, typ.) — [DATA_NEEDED: Q_G typ. value]
Output Capacitance Stored Energy (E_OSS) — [DATA_NEEDED: E_OSS typ. value]

Datasheets & Resources

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