IPB60R280P7ATMA1 - 600V 280mOhm CoolMOS P7 MOSFET | Infineon
MPN: IPB60R280P7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.88 | $880.00 |
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View Datasheet →IPB60R280P7ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) |
| Transistor Type | N-Channel MOSFET |
| Technology | Superjunction (SJ) |
| Drain-Source Voltage (V_DSS) | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | 53 W |
| Package | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (2 + Tab) |
| Operating Temperature Range | -55 °C to +150 °C (T_j max) |
| Configuration | Single N-Channel |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Generation | 7th Gen CoolMOS (successor to P6) |
IPB60R280P7ATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input; standard 10V gate drive recommended |
| Pin 2 | Drain (Tab) — Drain terminal connected to the metal mounting tab; PCB copper-pour is the primary heatsink |
| Pin 3 | Source — Source terminal; Kelvin connection recommended at high dV/dt |
Safe Operating Area (DC, T_C = 25 °C)
Typical Applications
IPB60R280P7ATMA1 is suitable for 6 applications: Switched-Mode Power Supplies (SMPS), Power Factor Correction (PFC) Stages, Solar Inverters, Industrial LED Drivers, Server & Telecom Power, E-Mobility Charging.
Switched-Mode Power Supplies (SMPS)
The IPB60R280P7ATMA1 fits mainstream 600 V-class switched-mode power supplies with universal AC input (85-305 VAC). Its 600 V V_DSS provides ample derating margin for 400 V PFC bus rails, and the 280 mOhm R_DS(on) at V_GS=10 V keeps conduction loss low at full load. The CoolMOS P7 superjunction architecture delivers ultra-low ringing, simplifying EMI filter design in flyback and PFC stages. In a typical 90 W adapter, this MOSFET achieves peak efficiency above 92%, outperforming legacy planar 600 V parts by 1-2 percentage points. The PG-TO263-3 package tab dissipates 53 W at T_C=25 °C, supporting continuous 12 A operation with adequate PCB copper-pour heatsinking.
Recommended
Power Factor Correction (PFC) Stages
The IPB60R280P7ATMA1 is well suited to continuous-conduction-mode (CCM) boost PFC front ends operating from a 400 VDC bus. Its fast body diode and ultra-low switching loss allow switching frequencies of 65-150 kHz with minimal reverse-recovery penalty, reducing inductor size and improving power density. The 600 V V_DSS rating tolerates line transients and surge events on the rectified mains. With 280 mOhm R_DS(on) and the P7 platform's low gate charge, total MOSFET loss in a 300 W PFC stage stays under 4 W, easily handled by the PG-TO263-3 tab with 2-3 square inches of copper. This combination of efficiency and robustness is why P7 devices dominate modern server and telecom PFC designs.
Recommended
Solar Inverters
The IPB60R280P7ATMA1 supports residential and small-commercial string solar inverters requiring 600 V switching capability. In a 5 kW single-phase inverter, the P7's ultra-low ringing tendency allows longer unclamped inductive switching paths without excessive voltage overshoot, reducing snubber complexity. Its 280 mOhm R_DS(on) at V_GS=10 V keeps conduction loss in the H4/H5 topology manageable at 8-10 A per switch. The PG-TO263-3 package tab provides the thermal headroom needed for sustained full-power operation outdoors within the IP65 enclosure, where ambient temperatures can reach 60 °C. AEC-Q100 grade is not required for indoor inverter sections, but the part's industrial temperature grade (-55 °C to +150 °C T_j) comfortably covers rooftop operating conditions.
Recommended
Industrial LED Drivers
The IPB60R280P7ATMA1 serves as the primary switch in high-power LED drivers from 100 W to 500 W output, particularly for street-lighting and horticultural fixtures. Its 600 V rating handles rectified 277 VAC commercial mains with comfortable margin, while the 280 mOhm R_DS(on) keeps the flyback or PFC-Flyback converter loss budget under 5%. The CoolMOS P7 platform's low ringing tendency eliminates the need for RC snubbers in most designs, reducing BOM cost. At a 200 W output with the IPB60R280P7ATMA1 in the PFC stage, overall driver efficiency reaches 94%, meeting the DOE and ENERGY STAR requirements for commercial LED luminaires.
Recommended
Server & Telecom Power
The IPB60R280P7ATMA1 is deployed in CRPS (Common Redundant Power Supply) and telecom rectifier units requiring high-efficiency front-end conversion. Its 280 mOhm R_DS(on) at 600 V delivers the conduction loss profile needed for 80 PLUS Titanium efficiency targets, while the P7 platform's low Q_G reduces gate-drive power consumption. In a 2400 W server PSU, paralleling two IPB60R280P7ATMA1 devices per PFC switch distributes current and thermal load, simplifying heatsink design. The PG-TO263-3 package is widely accepted in 1U server form factors and supports the high-density PCB layouts typical of modern datacenter power conversion.
Recommended
E-Mobility Charging
The IPB60R280P7ATMA1 supports on-board EV chargers and AC charging station power modules rated up to 22 kW. In a three-phase 11 kW PFC stage, the 600 V V_DS rating tolerates the rectified 480 V bus with margin for surge and transient events on the AC mains. The 12 A continuous drain current and 280 mOhm R_DS(on) keep per-device loss under 10 W at full load, while the PG-TO263-3 tab's thermal performance supports the demanding duty cycle of charging sessions. Although AEC-Q100 grade is not qualified for this part, its industrial temperature range and AEC-compliant manufacturing process make it a common choice in non-safety-critical charging paths.
Recommended
Recommended Products Summary
Engineering reference data for IPB60R280P7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB60R360P7ATMA1 | IPD80R600P7ATMA1 | IPL60R105P7AUMA1 | IPB60R190C6ATMA1 | IPP60R180P7XKSA1 | IPN70R360P7SATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| Drain-Source Voltage V_DSS | 600 V | 600 V | 800 V | 600 V | 600 V | 600 V | 700 V |
| R_DS(on) max at V_GS=10V | 280 mOhm | 360 mOhm | 600 mOhm | 105 mOhm | 190 mOhm | 180 mOhm | 360 mOhm |
| Continuous Drain Current I_D (T_C=25°C) | 12 A | 11 A | 7 A | 31 A | 20 A | 22 A | 12 A |
| Power Dissipation P_D (T_C=25°C) | 53 W | 52 W | 42 W | 150 W | 100 W | 100 W | 57 W |
| CoolMOS Generation | P7 (7th Gen) | P7 (7th Gen) | P7 (7th Gen) | P7 (7th Gen) | C6 (older) | P7 (7th Gen) | P7 (7th Gen) |
| Unit Price (qty 1) | $1.85 | $1.70 | $1.45 | $3.20 | $2.10 | $2.40 | $1.60 |
Key Differentiators
- Ultra-low ringing tendency (vs IPB60R190C6ATMA1 (C6))
- Lower R_DS(on) for the same voltage class (vs IPD80R600P7ATMA1)
- Higher current capability than higher-R_DS(on) P7 grades (vs IPD80R600P7ATMA1)
Design Notes
Estimated: at I_D = 12 A and R_DS(on) = 280 mOhm, conduction loss is roughly 12² × 0.28 = 40 W. The PG-TO263-3 tab has θ_JC ≈ 2.5 °C/W, so junction rise at T_C = 25 °C approaches 100 °C before ambient derating. To keep T_j under 125 °C at 50 °C ambient, total loss must stay below ~3 W sustained; this typically requires operating the part at 4-5 A continuous or providing an external heatsink. Always size PCB copper-pour (minimum 1-2 square inches on drain tab) to spread heat across the board.
Keep the gate-drive loop as small as possible - return the gate-driver GND directly to the MOSFET source via a dedicated Kelvin trace, not through the power ground path. Place a 10-100 Ohm gate resistor in series to damp ringing and slow dV/dt, which reduces EMI. Maintain at least 4 mm creepage between the drain tab and low-voltage traces to meet 600 V isolation requirements. Use a copper-pour on the drain tab rather than a thermal via array only - the tab is the primary thermal path.
Do not drive the gate below 10 V - R_DS(on) rises sharply at V_GS < 8 V and the device may not fully enhance at V_GS = 5 V. Avoid inductive switching without a TVS or RCD clamp: the body diode can avalanche destructively if dV/dt exceeds the rated 5 V/ns during reverse recovery. Never exceed V_GS = ±20 V (static) or ±30 V (transient) - the thin gate oxide will fail. When paralleling devices, gate-source resistors (10-100 kOhm) are required on each unit to suppress parasitic oscillation.
The CoolMOS P7 platform is designed for ultra-low ringing tendency, but at switching frequencies above 100 kHz the dV/dt (typically 5-10 V/ns) still requires attention. Use a snubber (small RC across drain-source) only when ringing amplitude exceeds 20% of V_DS, and keep snubber leads short. Common-mode chokes on the AC input and Y-capacitors across isolation barriers remain the most effective EMI countermeasures; the MOSFET's intrinsic low ringing characteristic reduces but does not eliminate the need for filtering.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial/commercial applications; for automotive designs, look at Infineon's AEC-Q100-qualified CoolMOS variants.
