IPC100N04S51R7ATMA1 vs IQDH88N06LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S51R7ATMA1 by Infineon and IQDH88N06LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveInfineon
IQDH88N06LM5CGSCATMA1
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΞ© | Infineon
IQDH88N06LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S51R7ATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $2.31 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS-5 | β |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage VDS | 40 V | β |
| Continuous Drain Current ID | 100 A (at TC) | β |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation PD | 115 W (at TC) | β |
| Thermal Resistance RthJC | 1.3 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260 Β°C peak reflow) | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Qualified | Yes | β |
| Avalanche Tested | 100% tested | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | β |
| Technology | β | OptiMOS 5 (trench) |
| Drain-Source Voltage (V(BR)DSS) | β | 60 V |
| Continuous Drain Current (Ta=25Β°C) | β | 42 A |
| Continuous Drain Current (Tc=25Β°C) | β | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | β | 0.86 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 3 W |
| Power Dissipation (Tc=25Β°C) | β | 333 W |
| Gate Charge Qg typical | β | [DATA_NEEDED: Qg typical nC] |
| Operating Temperature Range | β | -55Β°C to +175Β°C (TJ) |
| Pin Count | β | 9 (with exposed pad) |
| Cooling | β | Dual-side cooling capable |
| Polarity | β | N-Channel |
| Configuration | β | Single |