IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon
MPN: IQDH88N06LM5CGSCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.78 | $37.80 |
| 100 | $3.36 | $336.00 |
| 500 | $2.95 | $1,475.00 |
| 1,000 | $2.62 | $2,620.00 |
| 5,000 | $2.31 | $11,550.00 |
Drop-in alternatives for IQDH88N06LM5CGSCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQDH88N06LM5CGSC
✅ Drop-In📋 Reference alternative (not in catalog)
IQE065N10NM5CGSCATMA1
✅ Drop-In✓ In Stock
$1.28 / Unit
View Datasheet →IQE050N08NM5CGATMA1
✅ Drop-In✓ In Stock
$1.75 / Unit
View Datasheet →BSC0502NSIATMA1
✅ Drop-In✓ In Stock
$0.85 / Unit
View Datasheet →ISC151N08NM6ATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →IQDH88N06LM5CGSCATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | OptiMOS 5 (trench) |
| Drain-Source Voltage (V(BR)DSS) | 60 V |
| Continuous Drain Current (Ta=25°C) | 42 A |
| Continuous Drain Current (Tc=25°C) | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | 3 W |
| Power Dissipation (Tc=25°C) | 333 W |
| Operating Temperature Range | -55°C to +175°C (TJ) |
| Package | PG-WHTFN-9-U02 (PQFN 5x6) |
| Mounting Type | Surface Mount |
| Pin Count | 9 (with exposed pad) |
| Cooling | Dual-side cooling capable |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Polarity | N-Channel |
| Configuration | Single |
IQDH88N06LM5CGSCATMA1 Pin Configuration
| Pin 1 | Source — Source connection (paralleled with pins 2-3, 7-9) |
| Pin 2 | Source — Source connection (paralleled) |
| Pin 3 | Source — Source connection (paralleled) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain (Exposed Pad) — Drain connection via exposed thermal pad |
| Pin 6 | Drain — Drain connection (paralleled with EP) |
| Pin 7 | Source — Source connection (paralleled) |
| Pin 8 | Source — Source connection (paralleled) |
| Pin 9 | Source — Source connection (paralleled) |
Safe Operating Area (DC)
Typical Applications
IQDH88N06LM5CGSCATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Data Center Hot-Swap / OR-ing Switch, E-Mobility Battery Protection (48V Mild Hybrid), Industrial Motor Drive Half-Bridge, Power Tool Battery Pack Protection, Point-of-Load (POL) DC-DC Converter.
48V Telecom Synchronous Rectification
The IQDH88N06LM5CGSCATMA1 fits 48V telecom synchronous rectification stages thanks to its 60V breakdown voltage with comfortable headroom above 48V nominal and 0.86 mΩ typical RDS(on) at VGS=10V, which minimizes conduction loss in high-current secondary-side rectifiers. In a typical 48V-to-12V isolated bus converter, the IQDH88N06LM5CGSCATMA1 replaces Schottky diodes on the secondary side, reducing rectifier losses by 50-70% at full load and improving overall efficiency above 96%. The 5x6 PQFN footprint and dual-side cooling allow direct PCB mounting with both top-side heatsink and bottom-side copper pour, sustaining >30A continuous. Compared to a discrete diode rectifier, the synchronous MOSFET approach adds 3-5 percentage points to peak efficiency in 600W telecom bricks, while the 9-pin PG-WHTFN-9-U02 keeps the design within standard PCB density.
Recommended
Data Center Hot-Swap / OR-ing Switch
The IQDH88N06LM5CGSCATMA1 is well-suited to high-current hot-swap and OR-ing switch roles in 48V server and data-center power distribution, where its 0.86 mΩ RDS(on) at VGS=10V minimizes steady-state power dissipation across the MOSFET in continuous current paths. In a 48V-12V bus OR-ing arrangement, two IQDH88N06LM5CGSCATMA1 devices share redundant feeds while reverse-current blocking protects upstream supplies during faults. The 60V V(BR)DSS) provides robust transient margin against 60V spike events during load steps on long bus cables. Compared to traditional 100V parts used in this role, the IQDH88N06LM5CGSCATMA1's lower RDS(on) cuts conduction loss roughly 30-40%, directly reducing board thermal load in dense 1U server designs where every watt of distribution loss counts toward overall PUE.
Recommended
E-Mobility Battery Protection (48V Mild Hybrid)
In 48V mild-hybrid automotive battery management, the IQDH88N06LM5CGSCATMA1 serves as the main disconnect switch or precharge MOSFET where its 60V V(BR)DSS handles 48V nominal packs with margin for inductive transients, and its 0.86 mΩ RDS(on) at VGS=10V limits continuous carry loss to below 30W at 200A peak. In a typical BMS, the IQDH88N06LM5CGSCATMA1 is placed in series with the pack output, controlled by an isolated gate driver that responds to BMS fault commands within microseconds. Compared to higher-voltage 100V automotive MOSFETs, the IQDH88N06LM5CGSCATMA1's 60V rating remains safely above 48V nominal plus inductive ringing, while delivering ~30% lower RDS(on) than 100V alternatives - a direct efficiency win for stop-start regenerative braking energy recovery.
Recommended
Industrial Motor Drive Half-Bridge
The IQDH88N06LM5CGSCATMA1 is ideal for low-voltage industrial motor drive half-bridges driving 24-48V brushless DC motors, where its 60V breakdown rating comfortably covers 48V bus transients and the 0.86 mΩ RDS(on) at VGS=10V limits thermal dissipation during continuous PWM switching at 20-50 kHz. In a 3-phase BLDC inverter for an industrial pump or fan, six IQDH88N06LM5CGSCATMA1 devices (two per phase) form the power stage, switched by half-bridge drivers like the TLE9180D31QKXUMA1. Compared to IGBTs in the same voltage class, the IQDH88N06LM5CGSCATMA1 switches 5-10x faster, reducing switching loss and enabling quieter operation (lower dV/dt acoustic noise) at the same bus voltage, while the PQFN 5x6 footprint enables compact integrated motor-drive modules.
Recommended
Power Tool Battery Pack Protection
Cordless power tools using 18V-36V battery packs benefit from the IQDH88N06LM5CGSCATMA1 as the main pack disconnect MOSFET or as the low-side switch in the motor drive inverter. The 60V V(BR)DSS) provides 50% margin above 36V max battery stacks, and the 0.86 mΩ RDS(on) at VGS=10V keeps conduction losses minimal during high-current bursts (cordless grinders can draw 50-80A peaks). In a 5S Li-ion pack (18V nominal, 21V max) the IQDH88N06LM5CGSCATMA1 can serve as a pack-side protection FET, cutting off the load on overcurrent or overtemperature. Compared to the multiple paralleled 30V FETs often used in cost-sensitive power tools, a single IQDH88N06LM5CGSCATMA1 simplifies the BOM, reduces PCB area, and improves overall robustness due to Infineon's automotive-grade OptiMOS process.
Recommended
Point-of-Load (POL) DC-DC Converter
The IQDH88N06LM5CGSCATMA1 fits high-current point-of-load (POL) converter stages converting 24V or 48V intermediate bus to lower voltages (3.3V, 5V, 12V) for server and telecom ASICs, where its low 0.86 mΩ RDS(on) at VGS=10V and OptiMOS 5 process technology deliver best-in-class figure-of-merit (FOM = RDS(on) × Qg) for high-frequency operation above 500 kHz. In a 48V-to-5V/40A POL buck converter, the IQDH88N06LM5CGSCATMA1 serves as the main control FET, achieving >95% peak efficiency at 500 kHz and >93% at 1 MHz. The 60V V(BR)DSS) handles 48V telecom transients comfortably, and the 5x6 PQFN footprint with dual-side cooling keeps the converter within a 25x25 mm footprint - ideal for dense PCB-mounted power delivery.
Recommended
Recommended Products Summary
Engineering reference data for IQDH88N06LM5CGSCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQDH88N06LM5CGSC | IQE065N10NM5CGSCATMA1 | IQE050N08NM5CGATMA1 | BSC0502NSIATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) |
| Package | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHTFN-9-U02 (PQFN 5x6) - same | PG-WHTFN-9-U02 (PQFN 5x6) - same | PG-WHTFN-9-U02 (PQFN 5x6) - same | PG-WHTFN-9-U02 (PQFN 5x6) - same | PG-WHTFN-9-U02 (PQFN 5x6) - same |
| Drain-Source Voltage V(BR)DSS | 60 V | 60 V | 100 V | 80 V | 60 V | 80 V |
| RDS(on) typical @ VGS=10V | 0.86 mΩ | 0.86 mΩ | 6.5 mΩ | 5.0 mΩ | 5.0 mΩ | 1.51 mΩ |
| Continuous Drain Current (Ta) | 42 A | 42 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (Tc) | 333 W | 333 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 |
| Dual-Side Cooling | Yes | Yes | Yes | Yes | No | Yes |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Industry-leading 0.86 mΩ RDS(on) in 60V class with dual-side cooling (vs BSC0502NSIATMA1)
- Lowest RDS(on) in Infineon's 60V OptiMOS 5 PQFN 5x6 family (vs ISC151N08NM6ATMA1)
- 60V rating optimized for 48V telecom, not over-engineered at 100V (vs IQE065N10NM5CGSCATMA1)
Design Notes
Estimated: at continuous 30A load in free air (Ta=25°C), conduction loss equals I² × RDS(on) = 30² × 0.00086 ≈ 0.77W, well within the 3W ambient rating. However, at 30A with Ta=85°C the case temperature rise must be calculated: with PQFN 5x6 on a 1 oz 4-layer board, theta_JA is roughly 50°C/W, giving a 38°C rise. To sustain >30A continuous at ambient temperatures above 60°C, use a top-side thermal interface material and heatsink, or place multiple copper layers with thermal vias directly under the exposed pad. The dual-side cooling capability of PG-WHTFN-9-U02 enables significantly higher current than single-side-cooled DFN equivalents at the same PCB area.
Per Infineon's PG-WHTFN-9-U02 land pattern recommendations: place the drain exposed pad on a copper pour spanning at least 25x15 mm, with a 4x4 array of 0.3 mm thermal vias connecting to inner ground/power planes. Source pins should be connected via a wide top-side copper pour to minimize source inductance, which directly impacts switching loss and gate-drive ringing. Keep the gate loop (gate driver output -> gate pin -> source return) area under 25 mm² to control VGS overshoot at fast switching edges. Add a 10-100 ohm gate-source resistor (Rgs) to prevent false turn-on during high dV/dt transients.
Do not operate the IQDH88N06LM5CGSCATMA1 above 60V drain-source, even transiently - avalanche breakdown at 60-65V may cause parametric shift. Always use a dedicated gate driver (not a logic output) capable of sourcing/sinking 1-2A peak for fast switching - weak gate drives increase transition loss and cause thermal runaway at high frequency. Watch for source-inductance-induced gate-oxide overstress: at very fast dI/dt (above 5 A/ns), VGS may overshoot by tens of volts, potentially exceeding the ±20V VGS absolute maximum. Add a TVS or tighter gate clamping if your layout inductance exceeds 5 nH.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is a commercial-grade part. For automotive AEC-Q100 qualified equivalents, contact Infineon or consult the OptiMOS 5 automotive datasheet family.
