IPC50N04S5L5R5ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IPC50N04S5L5R5ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC50N04S5L5R5ATMA1
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΞ© OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IPC50N04S5L5R5ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.94 |
| Transistor Type | N-Channel MOSFET | β |
| Mode | Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 50 A | β |
| Maximum Drain Current (silicon-limited, 25 Β°C) | 60 A | β |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΞ© | β |
| Gate Threshold VGS(th) | Logic Level (enhancement at β€ 4.5 V VGS) | β |
| Power Dissipation (Tc) | 42 W | β |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | β |
| MSL (Moisture Sensitivity Level) | MSL1 | β |
| Peak Reflow Temperature | 260 Β°C | β |
| Avalanche Rating | 100 % Avalanche Tested | β |
| RoHS / REACH | RoHS Compliant (Green Product) | β |
| Manufacturer | β | Infineon Technologies |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Automotive Qualification | β | AEC-Q101 (per part number suffix) |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 (per JEDEC J-STD-020) |