IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
MPN: IPC50N04S5L5R5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.72 | $7.20 |
| 100 | $0.58 | $58.00 |
| 500 | $0.49 | $245.00 |
| 1,000 | $0.42 | $420.00 |
| 5,000 | $0.36 | $1,800.00 |
IPC50N04S5L5R5ATMA1 Overview
A power MOSFET is a voltage-controlled three-terminal semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. N-channel enhancement-mode MOSFETs (the most common type) are normally OFF at zero VGS, then turn ON when VGS exceeds the threshold, and are widely used in synchronous buck converters, motor drives, solenoid drivers, and reverse-battery protection blocks in 12 V and 24 V automotive systems. The OptiMOS™ family specifically targets low RDS(on) per die area and fast switching, optimizing conduction and switching losses for high-current, high-frequency DC-DC conversion.
Key features of the IPC50N04S5L5R5ATMA1 include 5.5 mΩ max RDS(on) at VGS=10 V, logic-level compatibility (full enhancement at VGS as low as 4.5 V), 100 % avalanche-rated design, RoHS-compliant green-product construction, and a low RthJC of 3.6 K/W allowing the silicon die to carry up to 60 A at 25 °C case before package-limited current derating applies. The TDSON-8-33 footprint exposes the drain tab for top-side cooling, which is critical at the 42 W (Tc) power dissipation rating.
Architecturally, this device uses Infineon's trench MOSFET process with an optimized cell pitch that minimizes figure-of-merit RDS(on)×Qg. This enables high-efficiency switching at high frequencies (typically 100 kHz to 1 MHz in DC-DC stages) without the gate-charge penalty seen in older planar processes. The exposed pad also reduces thermal resistance, supporting high continuous currents on a small PCB footprint.
Typical applications include automotive 12 V and 24 V high-current switching (ECUs, body control modules), motor and solenoid drivers for HVAC flaps and pumps, synchronous rectification in secondary-side DC-DC converters, reverse-battery protection MOSFETs, hot-swap and OR-ing circuits, and industrial 24 V bus switches. Its AEC-Q101 qualification makes it especially attractive for safety-relevant automotive designs.
When designing with this MOSFET, keep gate-drive rise/fall times short (use a dedicated gate driver such as the EiceDRIVER™ 1ED family) and minimize loop inductance between drain, source and the gate-driver return. Thermal management must account for both steady-state conduction (P = I² × RDS(on)) and switching losses, especially at VIN near 24 V where avalanche energy during load-dump events must be dissipated within the avalanche rating.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet cover page, providing information gain for engineers selecting an automotive-grade 40 V N-channel MOSFET for body and powertrain applications.
Drop-in alternatives for IPC50N04S5L5R5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPC50N04S5L5R5ATMA1 (same form factor and footprint) — differing in Package, MSL Level, Operating Temperature Range, Technology, Avalanche Tested.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPC70N04S5L4R2ATMA1
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View Datasheet →IPC100N04S51R7ATMA1
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View Datasheet →IAUC60N04S6L030HATMA1
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View Datasheet →BSC019N04LSTATMA1
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View Datasheet →ISC011N04NM7VATMA1
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View Datasheet →IAUC60N10S5L110ATMA1
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View Datasheet →IPC50N04S5L5R5ATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Mode | Enhancement Mode |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc) | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | 42 W |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W |
| Operating Temperature Range | -55 °C to +175 °C |
| Package | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Mounting Type | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | MSL1 |
| Peak Reflow Temperature | 260 °C |
| Avalanche Rating | 100 % Avalanche Tested |
| RoHS / REACH | RoHS Compliant (Green Product) |
IPC50N04S5L5R5ATMA1 Pin Configuration
| Pin 1 | Source — MOSFET source (paralleled with pins 2, 3, 7, 8) |
| Pin 2 | Source — MOSFET source (paralleled with pins 1, 3, 7, 8) |
| Pin 3 | Source — MOSFET source (paralleled with pins 1, 2, 7, 8) |
| Pin 4 | Gate — MOSFET gate - logic-level drive |
| Pin 5 | NC — Not internally connected (per datasheet) |
| Pin 6 | NC — Not internally connected (per datasheet) |
| Pin 7 | Source — MOSFET source (paralleled with pins 1, 2, 3, 8) |
| Pin 8 | Source — MOSFET source (paralleled with pins 1, 2, 3, 7) |
| Pin 9 | Drain (Exposed Pad) — MOSFET drain and thermal pad - solder to PCB copper pour |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IPC50N04S5L5R5ATMA1 is suitable for 6 applications: Automotive ECU High-Side Switch, Synchronous Rectification in 12 V / 24 V DC-DC Buck Converters, Reverse-Battery Protection MOSFET, Motor and Solenoid Driver (HVAC, Pumps, Flaps), Hot-Swap and OR-ing Controller Switch, Industrial 24 V Bus Switching.
Automotive ECU High-Side Switch
The IPC50N04S5L5R5ATMA1's 5.5 mΩ RDS(on) at 10 V VGS and 50 A continuous rating make it ideal for high-side load switches inside automotive ECUs driving lamps, solenoids, and motors. AEC-Q101 qualification and -55 °C to +175 °C operating range cover under-the-hood and body-module thermal stress. Logic-level VGS(th) lets the part be driven directly from microcontroller GPIO or low-side gate-driver ICs, eliminating a charge pump. Used between the 12 V battery rail and the load, the device keeps conduction loss at 30 A below 5 W and, because it is 100 % avalanche-tested, survives the ISO 7637-2 load-dump transient within its 40 V VDS rating. The TDSON-8-33 exposed pad lets designers use top-side copper pour cooling without external heatsinks.
Recommended
Synchronous Rectification in 12 V / 24 V DC-DC Buck Converters
In synchronous buck converters fed from 12 V or 24 V automotive rails, the IPC50N04S5L5R5ATMA1 functions as the low-side synchronous rectifier MOSFET. Its 5.5 mΩ RDS(on) minimizes conduction loss on the freewheeling current path, and the trench OptiMOS™ process keeps total gate charge (Qg) low enough to switch efficiently at 300 kHz to 1 MHz. AEC-Q101 qualification allows the converter to be used in safety-relevant 24 V truck systems. The 40 V VDS rating gives comfortable headroom above 24 V nominal and survives transient spikes within the SOA. The exposed drain pad of TDSON-8-33 attaches directly to a copper pad, providing the thermal path to dissipate switching and conduction losses without an external heatsink.
Recommended
Reverse-Battery Protection MOSFET
The IPC50N04S5L5R5ATMA1 is well-suited as the main reverse-battery protection MOSFET placed between the 12 V/24 V battery and the ECU power input. Its 5.5 mΩ RDS(on) keeps voltage drop and power dissipation low at full load current, while its 40 V VDS rating tolerates load-dump transients up to the avalanche limit. Logic-level gate drive allows a simple high-side P-channel alternative or low-side N-channel charge-pump circuit to fully enhance the part from a microcontroller I/O. The exposed-pad TDSON-8-33 package provides the thermal mass to absorb brief fault currents, and AEC-Q101 qualification ensures long-term reliability in automotive service. A typical circuit places a P-channel or N-channel MOSFET in series with the battery feed, reverse-biased during a fault to block damaging negative voltage.
Recommended
Motor and Solenoid Driver (HVAC, Pumps, Flaps)
For driving 12 V/24 V automotive DC motors and solenoid actuators such as HVAC flaps, water pumps, and transmission solenoids, the IPC50N04S5L5R5ATMA1 serves as the low-side switch in H-bridge or half-bridge topologies. Its 5.5 mΩ RDS(on) and 50 A continuous current support motor stall-current peaks up to the silicon limit of 60 A, while the 100 % avalanche rating absorbs the inductive kickback energy when the motor is de-energized. AEC-Q101 qualification and 175 °C junction temperature support underhood thermal stress. Logic-level VGS(th) lets a half-bridge gate driver such as the 2EDL family switch the part efficiently. The exposed pad of the TDSON-8-33 package provides PCB-side heat spreading for continuous PWM operation.
Recommended
Hot-Swap and OR-ing Controller Switch
The IPC50N04S5L5R5ATMA1 is suitable for 12 V/24 V hot-swap and OR-ing applications in redundant power architectures. Its 5.5 mΩ RDS(on) minimizes steady-state voltage drop across the load-sharing path, and its 100 % avalanche rating protects the upstream supply when a faulty board is inserted into a live backplane. AEC-Q101 qualification is essential when the application is automotive-grade ECUs or industrial 24 V systems requiring reliability under thermal cycling. A typical hot-swap circuit places the MOSFET in series with the input rail, with a gate-resistor-capacitor network controlling inrush current. The TDSON-8-33 package handles brief inrush events up to the silicon limit of 60 A without overheating.
Recommended
Industrial 24 V Bus Switching
Outside of automotive, the IPC50N04S5L5R5ATMA1 supports industrial 24 V bus switching for PLC I/O modules, factory-automation actuators, and 24 V solenoid banks. Its 40 V VDS rating gives ample margin above 24 V nominal, and the 5.5 mΩ RDS(on) at 50 A keeps conduction loss below 14 W even at full rated current with adequate copper pour cooling. Logic-level VGS(th) allows direct interface with 3.3 V or 5 V microcontrollers and opto-isolated gate drivers. The AEC-Q101 qualification, while automotive-grade, exceeds typical industrial reliability requirements. The TDSON-8-33 footprint matches the IPC70N04S5L4R2ATMA1 and other OptiMOS™ family parts, enabling drop-in design reuse across product variants and load-current tiers.
Recommended
Recommended Products Summary
Engineering reference data for IPC50N04S5L5R5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPC70N04S5L4R2ATMA1 | IPC100N04S5L1R5ATMA1 | IPC100N04S51R7ATMA1 | IAUC60N04S6L030HATMA1 | BSC019N04LSTATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-33 | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 50 A | 70 A | 100 A | 100 A | 60 A | 100 A |
| On-Resistance RDS(on) max @ VGS=10V | 5.5 mΩ | 4.2 mΩ | 1.5 mΩ | 1.7 mΩ | 3.0 mΩ | 1.9 mΩ |
| Technology / Family | OptiMOS 5 (40 V) | OptiMOS 5 (40 V) | OptiMOS 5 (40 V) | OptiMOS 5 (40 V) | OptiMOS (40 V) | OptiMOS (40 V) |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Logic-Level VGS(th) | Yes (≤ 4.5 V) | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Best balance of low RDS(on) and 100% avalanche rating in OptiMOS 5 family (vs BSC019N04LSTATMA1)
- Logic-level VGS(th) eliminates need for charge pump or bootstrap (vs Standard-level MOSFETs (e.g. IAUC60N10S5L110ATMA1))
- 60 A silicon-limited current vs 50 A package-limited rating gives headroom (vs Non-OptiMOS automotive MOSFETs at 40 V)
Design Notes
Estimated: at 30 A continuous load and VGS=10 V, conduction loss is approximately I²×RDS(on) = 30² × 0.0055 = 4.95 W. With RthJC = 3.6 K/W (datasheet value), junction temperature rises roughly 17.8 °C above case. Solder the exposed pad (pin 9) to a copper pour of at least 25 mm² to keep junction below 125 °C at 70 °C ambient. Forced airflow or top-side heatsink is required for continuous operation above 35 A. Always cross-check SOA at the highest VIN and switching frequency combination before finalizing thermal design.
Place the gate-drive return path (source connection) as close to the source pins as possible to minimize parasitic inductance in the gate-drive loop. Use a kelvin-source connection if the layout allows. Keep the drain-source switching loop (drain to load, load to source) as small as practical to limit voltage overshoot during switching. Use 4-layer PCB with a continuous ground plane beneath the TDSON-8-33 footprint to provide both thermal spreading and low-impedance return paths.
Do not exceed VGS(max) of ±20 V - use a gate-source Zener clamp (15 V typical) when the gate is driven from a higher-voltage bootstrap supply. The TDSON-8-33 drain pad is the primary thermal path; failing to solder it properly to the PCB copper will cause overheating at modest loads. Do not parallel multiple IPC50N04S5L5R5ATMA1 without matching gate-resistor and source-inductance symmetry, or current sharing will be uneven. Finally, verify avalanche energy (EAS) is within the datasheet rating when switching inductive loads such as motors and solenoids.
Recommended land pattern follows JEDEC MO-240 for TDSON-8-33 with thermal pad. The exposed drain pad should be soldered to a copper area of at least 1 square inch (645 mm²) for full power dissipation capability. Use multiple thermal vias (0.3 mm drill, 1.0 mm pitch) under the exposed pad to conduct heat to inner copper planes. Place input bypass capacitors (10 µF or larger ceramic plus 100 nF high-frequency) within 5 mm of the drain-source loop.
Compliance Information
RoHS compliant (Green Product) per Infineon datasheet. AEC-Q101 qualified for automotive applications. Lead-free (260 °C peak reflow capable). MSL1 rated.
