IPC50N04S5L5R5ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IPC50N04S5L5R5ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC50N04S5L5R5ATMA1
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΞ© OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IPC50N04S5L5R5ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.41 |
| Transistor Type | N-Channel MOSFET | β |
| Mode | Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 50 A | β |
| Maximum Drain Current (silicon-limited, 25 Β°C) | 60 A | β |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΞ© | β |
| Gate Threshold VGS(th) | Logic Level (enhancement at β€ 4.5 V VGS) | β |
| Power Dissipation (Tc) | 42 W | β |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C (TJ) |
| Package | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | β |
| MSL (Moisture Sensitivity Level) | MSL1 | β |
| Peak Reflow Temperature | 260 Β°C | β |
| Avalanche Rating | 100 % Avalanche Tested | β |
| RoHS / REACH | RoHS Compliant (Green Product) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Technology | β | Trench MOSFET, silicon |
| Short-Circuit Withstand | β | Yes (current-limited) |
| RoHS Compliance | β | Compliant (per Infineon product page) |
| MSL Level | β | MSL 1 (per JEDEC J-STD-020) |