IPC70N04S5L4R2ATMA1 vs IPC100N04S5L1R5ATMA1 Comparison
Detailed side-by-side comparison of IPC70N04S5L4R2ATMA1 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC70N04S5L4R2ATMA1
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 β ActiveInfineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveSpecification Comparison
| Parameter | IPC70N04S5L4R2ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.18 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | β |
| Drain to Source Voltage (Vdss) | 40 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 70 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 50 W | β |
| R_DS(on) Max @ Vgs=10V | 4.2 mΞ© (typ) | β |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | β |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | β |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-34 (SS08 leadless) |
| Operating Temperature (Tj) | -55Β°C to +175Β°C | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260Β°C peak reflow) | MSL1 (260C peak reflow) |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Tested | 100% (60 A production test) | 100% |
| RoHS Status | Compliant (Green Product) | Compliant (Green Product) |
| Configuration | Single with Built-in Diode | β |
| Case Connection | DRAIN | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-5 40 V |
| Polarity / Channel Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | 20 V |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | β | 115 W |
| On-Resistance RDS(on) at VGS=10 V | β | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | β | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ] |
| Operating Temperature Range | β | -55C to +175C |
| AEC-Q101 Qualified | β | Yes |