IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
MPN: IPC70N04S5L4R2ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.94 | $940.00 |
| 5,000 | $0.78 | $3,900.00 |
Drop-in alternatives for IPC70N04S5L4R2ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IPC70N04S5L4R2ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A |
| Power Dissipation (Pd) @ Tc=25°C | 50 W |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V |
| Package | PG-TDSON-8-34 (Surface Mount) |
| Operating Temperature (Tj) | -55°C to +175°C |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (up to 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Tested | 100% (60 A production test) |
| RoHS Status | Compliant (Green Product) |
| Configuration | Single with Built-in Diode |
| Case Connection | DRAIN |
IPC70N04S5L4R2ATMA1 Pin Configuration
| Pin 1 | GATE — Gate input (logic-level compatible) |
| Pin 2 | DRAIN — Drain (internally connected to exposed pad) |
| Pin 3 | DRAIN — Drain (internally connected to exposed pad) |
| Pin 4 | DRAIN — Drain (internally connected to exposed pad) |
| Pin 5 | DRAIN — Drain (internally connected to exposed pad) |
| Pin 6 | DRAIN — Drain (internally connected to exposed pad) |
| Pin 7 | DRAIN — Drain (internally connected to exposed pad) |
| Pin 8 | SOURCE — Source (return path) |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
IPC70N04S5L4R2ATMA1 is suitable for 6 applications: Automotive 12V ECU Power Distribution, BLDC Motor Drive H-Bridge, Battery Management OR-ing / Load Switch, High-Current LED Matrix Driver, Industrial 24V Solenoid / Relay Driver, USB-PD / High-Current Load Switch.
Automotive 12V ECU Power Distribution
The IPC70N04S5L4R2ATMA1 suits 12 V automotive ECU high-side switching thanks to its 40 V Vdss rating that absorbs 24 V jump-start and load-dump transients, 4.2 mΩ R_DS(on) that keeps conduction loss at 30 A below 4 W, and AEC-Q101 qualification. Placed between battery rail and ECU supply, it provides solid-state load switching with logic-level gate drive directly from a 5 V microcontroller GPIO. The TDSON-8-34 footprint simplifies PCB layout, and the 175°C Tj rating enables placement near engine compartments. Compared to mechanical relays, this MOSFET enables PWM-based soft-start, diagnostics, and faster switching. Designers should still add a TVS for ISO 7637-2 compliance.
Recommended
BLDC Motor Drive H-Bridge
The IPC70N04S5L4R2ATMA1 fits 12 V/24 V brushless DC motor H-bridge high-side and low-side positions because its 4.2 mΩ R_DS(on) minimizes conduction loss during PWM at 20-50 kHz, 70 A continuous current handles motor inrush, and logic-level gate drive is compatible with 3.3 V microcontrollers via gate-driver ICs. The 100% avalanche-tested rating and 175°C Tj provide headroom for hard switching transients. Used in HVAC blowers, water pumps, and electric power steering auxiliary motors. Design tip: keep gate-loop inductance below 5 nH by minimizing gate-driver-to-MOSFET trace length to suppress ringing.
Recommended
Battery Management OR-ing / Load Switch
The IPC70N04S5L4R2ATMA1 functions as an ideal-diode OR-ing switch in redundant battery or e-fuse topologies, leveraging its 4.2 mΩ R_DS(on) to drop less than 0.3 V at 70 A versus Schottky diode alternatives. Its logic-level gate drive enables microcontroller-controlled reverse-current blocking, while the 40 V Vdss tolerates 24 V industrial bus transients. The AEC-Q101 qualification suits automotive BMS modules. Place source-side body diode parallel with a Schottky for dead-time conduction; the integrated body diode handles 70 A avalanche events safely per the production test rating.
Recommended
High-Current LED Matrix Driver
The IPC70N04S5L4R2ATMA1 drives automotive LED matrix headlamp strings because its 70 A continuous current handles multiple parallel LED strings, 40 V Vdss tolerates load-dump, and 4.2 mΩ R_DS(on) keeps conduction loss manageable even at 10 A per channel. Logic-level gate drive integrates with LED driver ICs that use 3.3 V or 5 V PWM dimming. The exposed drain pad simplifies thermal management on aluminum-core PCBs. Designers can switch up to 1 MHz with proper gate-driver selection, enabling high-resolution matrix-beam dimming patterns.
Recommended
Industrial 24V Solenoid / Relay Driver
The IPC70N04S5L4R2ATMA1 drives 24 V industrial solenoids and relay coils because its 40 V Vdss comfortably tolerates 24 V nominal plus flyback transients clamped to 36 V, 70 A continuous handles solenoid inrush, and 4.2 mΩ R_DS(on) keeps dissipation below 5 W at typical 20 A loads. Logic-level gate drive interfaces directly with PLC 24 V output modules. The 100% avalanche-tested rating protects against unclamped inductive turn-off events. For free-wheeling, use an external TVS or Schottky diode rated for the peak current.
Recommended
USB-PD / High-Current Load Switch
The IPC70N04S5L4R2ATMA1 enables 5 V/12 V/20 V USB-PD load switching where its 4.2 mΩ R_DS(on) drops only 0.21 V at 5 A and 70 A continuous current supports 100 W+ power profiles. Logic-level gate drive from USB-PD controller GPIOs eliminates driver stages. The 40 V Vdss tolerates 20 V PD plus inductive ringing. Used in automotive USB charging ports, industrial docking stations, and high-current eFuse circuits. The exposed drain pad enables compact layouts with minimal copper area for thermal relief.
Recommended
Recommended Products Summary
Engineering reference data for IPC70N04S5L4R2ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPC100N04S5L1R5ATMA1 | IPB100N04S4H2ATMA1 | IPD50N04S4L08ATMA1 | IPD90N04S403ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-34 | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Vdss (V) | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Id @ Tc=25°C (A) | 70 A | 100 A | 100 A | 50 A | 90 A |
| R_DS(on) typ @ Vgs=10V (mΩ) | 4.2 mΩ | 1.5 mΩ | 1.2 mΩ | 8 mΩ | 4 mΩ |
| Gate Drive Voltage (V) | 4.5 V (logic level) | 4.5 V (logic level) | 10 V (standard) | 4.5 V (logic level) | 10 V (standard) |
| Power Dissipation (W) | 50 W | 100 W | 115 W | 50 W | 75 W |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest R_DS(on) at logic-level Vgs in 40V OptiMOS 5 family (vs IPD50N04S4L08ATMA1)
- Higher continuous current rating than lower-R_DS(on) alternatives (vs BSZ0901NSIATMA1)
- Automotive-grade qualification at competitive price (vs IPB100N04S4H2ATMA1)
Design Notes
Estimated: at Id=30A and R_DS(on)=4.2mΩ, conduction loss is approximately 3.8W. The TDSON-8-34 package has typical R_theta_JA around 50°C/W on 1oz copper 1sq-inch pad, giving a 190°C junction temperature rise above 25°C ambient. Use at least 2sq-inch of 2oz copper on the drain pad for thermal relief, or place multiple thermal vias to inner planes. For sustained 50A+ operation, an external heatsink or top-side cooling is required.
Minimize the gate-loop inductance by placing the gate-driver as close as possible to pin 1 (GATE), keeping the gate-trace short and wide. Use a 10Ω-100Ω gate resistor to dampen ringing caused by parasitic L-C resonance between gate inductance and C_iss. Place a 100kΩ pull-down resistor from gate to source to ensure the MOSFET stays off during MCU reset or floating-GP conditions. Source: Infineon OptiMOS 5 application note on gate-drive layout.
Do not operate the gate below the Vgs(th) minimum of approximately 1.0 V - the MOSFET may partially turn on, causing shoot-through in half-bridge configurations. Do not exceed Vgs=±20V absolute maximum; use a Zener clamp or gate-driver with built-in protection. The body diode has a limited reverse-recovery rating; for hard-switched bridge topologies add an external Schottky anti-parallel diode rated for the application current. Source: Infineon datasheet absolute maximum ratings.
Compliance Information
AEC-Q101 (not AEC-Q100) qualified for automotive applications. MSL1 rated to 260°C peak reflow. 175°C maximum operating junction temperature. Green Product (RoHS compliant) per Infineon product designation.
