IPD090N03LGATMA1 vs IAUC120N06S5L032ATMA1 Comparison
Detailed side-by-side comparison of IPD090N03LGATMA1 by Infineon and IAUC120N06S5L032ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 β ActiveSpecification Comparison
| Parameter | IPD090N03LGATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.82 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | β |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | β |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | β |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | β |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | β |
| Operating Temperature Range | -55C to +175C (junction) | -55 C to +175 C (T_j) |
| Package | PG-TO252-3-11 (DPAK) | PG-TDSON-8-34 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Technology Family | OptiMOS 30V | β |
| Configuration | Single | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 (60 V) |
| Transistor Type | β | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | β | 60 V |
| Continuous Drain Current (I_D, T_j) | β | 120 A |
| R_DS(on) Max (V_GS = 10 V) | β | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | β | 94 W |
| Technology | β | OptiMOS 5 Trench |
| AEC-Q101 Qualified | β | Yes |
| Gate Threshold Voltage V_GS(th) | β | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | β | [DATA_NEEDED: Q_G total at V_GS=10V] |