IPD090N03LGATMA1 vs IAUC120N06S5L032ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPD090N03LGATMA1 tarafından Infineon ve IAUC120N06S5L032ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPD090N03LGATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | — |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | — |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | — |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| İşletim Sıcaklığı Aralığı | -55C to +175C (junction) | -55 C to +175 C (T_j) |
| Paket | PG-TO252-3-11 (DPAK) | PG-TDSON-8-34 (5x6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS Durumu | Compliant | Compliant |
| Technology Family | OptiMOS 30V | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (60 V) |
| Transistor Türü | — | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| Technology | — | OptiMOS 5 Trench |
| AEC-Q101 Qualified | — | Yes |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |