IPD50P04P413ATMA2 vs BSC050NE2LSATMA1 Comparison
Detailed side-by-side comparison of IPD50P04P413ATMA2 by Infineon and BSC050NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050NE2LSATMA1
BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon
BSC050NE2LSATMA1 β ActiveSpecification Comparison
| Parameter | IPD50P04P413ATMA2 | BSC050NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.36 |
| Polarity / Device Type | P-Channel MOSFET | β |
| Technology | OptiMOS-P2 (Trench) | OptiMOS 25V (trench) |
| Drain-Source Voltage (VDS) | -40 V | β |
| Continuous Drain Current (TC=25Β°C, ID) | 50 A | β |
| Continuous Drain Current (TC=100Β°C, ID) | [DATA_NEEDED: ID @ 100Β°C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | β |
| Power Dissipation (TC=25Β°C, Ptot) | 58 W | β |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΞ© (typ) / 12.6 mΞ© (max) | β |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Maximum Junction Temperature (TJ,max) | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55C to +150C |
| Package | PG-TO252-3-313 (DPAK) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | β |
| MSL Level | 1 | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | β | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | β | 39 A |
| R_DS(on) max at V_GS=10V | β | 5 mOhm |
| R_DS(on) typical at V_GS=10V | β | 4.2 mOhm |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 28 W |