IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2
MPN: IPD50P04P413ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.82 | $0.82 |
| 10 | $0.71 | $7.10 |
| 100 | $0.62 | $62.00 |
| 500 | $0.54 | $270.00 |
| 1,000 | $0.47 | $470.00 |
| 2,500 | $0.42 | $1,050.00 |
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View Datasheet →IPD50P04P413ATMA2 Maximum Ratings & Electrical Characteristics
| Polarity / Device Type | P-Channel MOSFET |
| Technology | OptiMOS-P2 (Trench) |
| Drain-Source Voltage (VDS) | -40 V |
| Continuous Drain Current (TC=25°C, ID) | 50 A |
| Power Dissipation (TC=25°C, Ptot) | 58 W |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) |
| Gate-Source Voltage (VGS) max | ±20 V |
| Maximum Junction Temperature (TJ,max) | 175 °C |
| Operating Temperature Range | -55 °C to +175 °C |
| Package | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs |
| MSL Level | 1 |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
IPD50P04P413ATMA2 Pin Configuration
| Pin 1 | Gate — MOSFET gate; drive to -10 V for full RDS(on) |
| Pin 2 | Drain — MOSFET drain; also tied to metal tab/backside thermal pad |
| Pin 3 | Source — MOSFET source (higher-voltage rail for high-side P-FET use) |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IPD50P04P413ATMA2 is suitable for 7 applications: 12 V Automotive High-Side Load Switch, Reverse-Polarity / Reverse-Battery Protection, DC Motor Half-Bridge (HVAC Blower, Seat Adjuster), USB / Infotainment Power Rail Switch, 24 V Truck / Bus System Load Switch, LED Driver High-Side Switch (Automotive Lighting), Battery Management System (BMS) Discharge Path.
12 V Automotive High-Side Load Switch
The IPD50P04P413ATMA2 is ideal for high-side switching in 12 V automotive body and lighting ECUs because its -40 V VDS rating provides ample margin above the 12 V nominal rail with headroom for jump-start (~24 V) and load-dump transients, and its P-channel polarity allows the load to be switched with a low-side-referenced gate drive. With RDS(on) of 9.2 mΩ typical at VGS = -10 V, conduction loss at 10 A continuous load is only ~0.9 W, manageable in DPAK with 1 in² of copper. AEC-Q101 qualification supports direct deployment under the hood and in cabin modules. Place the part with its drain tab on at least 1 oz 1-in² copper to keep RθJA near 40 °C/W.
Recommended
Reverse-Polarity / Reverse-Battery Protection
The IPD50P04P413ATMA2 makes an excellent reverse-polarity protection switch because its P-channel polarity keeps the load-side ground reference intact while blocking reverse current. With 50 A continuous ID and 9.2 mΩ RDS(on) it can carry full automotive cranking currents (200-300 A pulsed) within its SOA, provided pulse duration is kept short. The 40 V VDS rating handles 24 V truck systems and jump-start events without avalanche breakdown. Drive the gate with a pull-up to ground through a Zener clamp and pull-down resistor; the device turns off naturally when VGS approaches zero on reverse connection.
Recommended
DC Motor Half-Bridge (HVAC Blower, Seat Adjuster)
In 12 V brushed-DC motor half-bridges (e.g. HVAC blowers, seat adjusters, window lifts), the IPD50P04P413ATMA2 serves as the high-side P-channel switch. Its 9.2 mΩ RDS(on) minimizes the on-state voltage drop across the FET, and its 50 A continuous rating covers inrush current at motor startup. The P-channel configuration eliminates the bootstrap or charge-pump needed by N-channel high-side FETs, simplifying the gate-drive circuit. Use a TVS diode across drain-source to clamp inductive flyback, and respect single-pulse avalanche ratings for repetitive motor stall conditions.
Recommended
USB / Infotainment Power Rail Switch
In automotive USB charging and infotainment power distribution, the IPD50P04P413ATMA2 is used as a hot-swap / load-dump tolerant switch between the 12 V battery rail and downstream buck converters feeding USB-PD controllers. Its 9.2 mΩ RDS(on) keeps conduction loss under 0.2 W at 5 A continuous, and its P-channel polarity allows the upstream 12 V rail to remain connected while the load is turned off via gate drive. The 40 V VDS rating covers cold-crank and load-dump events without latch-up.
Recommended
24 V Truck / Bus System Load Switch
For 24 V commercial-vehicle and bus applications (HVAC, lighting, hydraulic controls), the IPD50P04P413ATMA2 handles the higher nominal bus with its 40 V VDS rating, providing comfortable headroom above the 24 V rail even under transient double-battery conditions. The 9.2 mΩ RDS(on) keeps conduction loss manageable at 10-20 A continuous loads, and P-channel polarity avoids the bootstrap circuitry required for N-channel high-side switches. AEC-Q101 qualification supports deployment in chassis-mounted modules subject to vibration and temperature cycling.
Recommended
LED Driver High-Side Switch (Automotive Lighting)
In automotive LED headlamp and tail-lamp drivers, the IPD50P04P413ATMA2 serves as a high-side disconnect / PWM switch. The P-channel polarity allows the LED string to be tied to chassis ground - simplifying thermal management of the LED PCB. The 9.2 mΩ RDS(on) at full -10 V gate drive minimizes wasted power in the FET, and PWM dimming up to 1 kHz is supported thanks to the low Qg of the OptiMOS-P2 cell. AEC-Q101 qualification is required for under-hood and exterior lighting applications.
Recommended
Battery Management System (BMS) Discharge Path
In 12 V/24 V battery-management and e-fuse circuits, the IPD50P04P413ATMA2 functions as a low-loss disconnect switch in the discharge path. Its 50 A continuous rating covers typical load currents, and the 9.2 mΩ RDS(on) keeps full-load drop under 0.5 V at 50 A. The P-channel polarity keeps the load's ground reference intact, simplifying fault detection by the BMS microcontroller. AEC-Q101 qualification supports deployment in under-hood battery modules.
Recommended
Recommended Products Summary
Engineering reference data for IPD50P04P413ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD50P04P4L11ATMA2 | IPB180P04P4L02ATMA2 | IRF4905STRRPBF |
|---|---|---|---|---|
| Brand | Infineon | Infineon (same-brand) | Infineon (same-brand) | Infineon (formerly IR) |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO263-3 (D2PAK) - larger but DPAK-compatible footprint | TO-252 (DPAK) - same |
| Polarity | P-Channel | P-Channel (same) | P-Channel (same) | P-Channel (same) |
| VDS (Drain-Source Voltage) | -40 V | -40 V (same) | -40 V (same) | -55 V (higher rating) |
| Continuous Drain Current (TC=25°C) | 50 A | 50 A (same) | 180 A (much higher) | 74 A (higher) |
| RDS(on) typ @ VGS=-10V | 9.2 mΩ | ~9-10 mΩ (within 10%) | ~1.8 mΩ (much lower) | ~20 mΩ (higher loss) |
| Power Dissipation (TC=25°C) | 58 W | 58 W (same) | ~150 W (D2PAK) | 200 W (DPAK with proper layout) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | Industrial / non-automotive |
| Technology | OptiMOS-P2 (Trench) | OptiMOS-P2 (Trench) | OptiMOS-P2 (Trench) | HEXFET Planar (older) |
Key Differentiators
- Lower RDS(on) at VGS = -10 V vs. industry-standard P-channel DPAK alternatives (vs IRF4905STRRPBF)
- AEC-Q101 automotive qualification vs. industrial-grade P-FET alternatives (vs IRF4905STRRPBF)
- OptiMOS-P2 trench technology reduces Qg and switching loss (vs IRF4905STRRPBF (planar HEXFET))
- P-channel polarity enables direct ground-referenced gate drive (vs IPD90N06S407ATMA2 (N-channel equivalent))
Design Notes
Estimated: at VGS=-10 V, ID=20 A, the IPD50P04P413ATMA2 dissipates I^2*R = 20^2 * 0.0092 = 3.7 W. With RθJA = 40 °C/W on a 1-oz 1-in² copper pad (JEDEC EIA/JESD51), the junction temperature rises ~148 °C above 25 °C ambient. Above 10 A continuous, expand the drain tab copper pad to at least 2 in² or add thermal vias to an internal plane to keep Tj below 150 °C. The 175 °C Tj,max rating allows some derating headroom but is not a steady-state target.
Place the IPD50P04P413ATMA2 with its drain tab on a continuous copper pour of at least 1 in², connected to the drain PCB net - this both carries the high current and provides primary thermal relief. Add 6-10 thermal vias (0.3 mm drill) under the tab to a bottom-layer ground plane for improved θJA. Keep the gate-trace short (< 5 mm) and surround it with ground to minimize dv/dt-induced turn-on; add a 10-100 Ω gate resistor to damp ringing.
Do not drive the gate of the IPD50P04P413ATMA2 directly from a 3.3 V GPIO - the device needs VGS = -10 V to reach its 9.2 mΩ RDS(on); at -4.5 V the RDS(on) roughly doubles. Use a gate-driver or NPN level-shifter. Always include a gate-source pull-down resistor (typ. 100 kΩ) to keep the FET OFF when the driver enters high-Z; failure to do so allows slow turn-on from leakage currents. Never exceed VGS = ±20 V (absolute maximum) - use a Zener or TVS clamp on the gate for 24 V systems.
For PWM dimming or motor-drive applications, the high dv/dt of the IPD50P04P413ATMA2 can couple into adjacent traces via the drain-source capacitance. Keep the gate-drive return path tight (use a Kelvin source connection if switching > 1 A at > 1 kHz), and place a small RC snubber (10 Ω + 1 nF) across drain-source if ringing exceeds 20% of VDS. The OptiMOS-P2 cell already provides good EMI vs older planar P-FETs, so most designs need only a ferrite bead on the gate.
Use a 4-layer PCB (signal / ground / power / signal) for automotive designs with this part; the inner ground plane beneath the DPAK drain tab provides both thermal vias and a low-impedance return for switching transients. The DPAK footprint is industry-standard; ensure the drain-pad dimensions match Infineon's TO252-3-313 land pattern (recommended pad: ~6 mm × 9 mm). Avoid running sensitive analog signals (sensor, audio) directly under the FET tab to prevent capacitive coupling of switching edges.
Compliance Information
AEC-Q101 (automotive discrete) qualified per Infineon datasheet; RoHS and REACH compliant; lead-free reflow-compatible (MSL1). Note: AEC-Q101 is the discrete-semiconductor equivalent of AEC-Q100 for ICs.
