IPD60R1K0PFD7SAUMA1 vs IPD600N25N3GATMA1 Comparison
Detailed side-by-side comparison of IPD60R1K0PFD7SAUMA1 by Infineon and IPD600N25N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD60R1K0PFD7SAUMA1 | IPD600N25N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.84 |
| Technology | CoolMOS PFD7 Superjunction (SJ) MOSFET | OptiMOS 3 trench MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 600 V | 250 V |
| Continuous Drain Current (ID) at TC | 4.7 A | — |
| Power Dissipation (PD) at TC | 26 W | — |
| Drain-Source On-Resistance (RDS(on)) | 1 Ω @ VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max gate-source) | — |
| Gate Charge (QG) | 6 nC @ VGS=10V | — |
| Output Capacitance (Coss) | 230 pF @ 400 V | — |
| Package | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount |
| Mounting Type | Surface Mount | Surface Mount (Tape & Reel) |
| Operating Temperature Range | -55C to +150C (TJ) | — |
| Gate Drive Voltage (recommended) | 10 V (full enhancement) | — |
| RoHS Status | Compliant | — |
| Series | CoolMOS PFD7 consumer / superjunction | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 3 |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 25 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| On-Resistance RDS(on) max | — | 60 mOhm at VGS = 10 V |
| Gate Threshold Voltage | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Operating Junction Temperature | — | -55 C to +175 C |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Halogen Free | — | Yes, per IEC 61249-2-21 |
| JEDEC Qualification | — | Qualified for target application |