IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK
MPN: IPD60R1K0PFD7SAUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.31 | $1.31 |
| 10 | $1.12 | $11.20 |
| 100 | $0.86 | $86.00 |
| 500 | $0.65 | $325.00 |
| 1,000 | $0.49 | $490.00 |
| 5,000 | $0.36 | $1,800.00 |
IPD60R1K0PFD7SAUMA1 Overview
A superjunction MOSFET is a high-voltage power switch built on a deep-trench charge-balancing structure that lets designers push breakdown voltage into the 500-700 V range while keeping R DS(on) far lower than conventional planar MOSFETs of the same die area. CoolMOS™ PFD7 sits in the broader Infineon CoolMOS™ family — a lineage of superjunction (SJ) MOSFETs — under the umbrella of high-voltage discrete semiconductors and ultimately power-management ICs. This platform iteration optimizes switching loss, body-diode ruggedness, and ease-of-use for hard-switching topologies.
Key specifications include 600 V drain-source breakdown, 4.7 A continuous ID (TC), 1 Ω R DS(on) max at VGS=10V, a 230 pF output capacitance (Coss) at 400 V, and an ultra-low gate charge QG of 6 nC. The device is fully avalanche-rated and offers fast body-diode recovery, simplifying snubber design in bridge topologies. The PG-TO252-3 package provides a low thermal resistance path when soldered to a sufficiently large copper pad.
The PFD7 architecture combines the fast-switching benefits of a 2nd-generation superjunction MOSFET with state-of-the-art ease-of-use and price/performance for consumer markets. Its integrated Zener-protected gate and optimized internal source-bonding wire layout enable excellent dv/dt immunity, while the low Qoss reduces turn-on losses in resonant and soft-switching converters. The technology meets the highest efficiency standards and supports high power density, enabling very slim designs.
Typical applications include AC-DC chargers and adapters (flyback and quasi-resonant), motor drives for small white goods and pumps, LED lighting drivers, auxiliary and standby SMPS in appliances, and cost-optimized industrial power conversion. Designers select this part when balancing high-voltage blocking, low conduction loss, and small form factor in price-sensitive products.
When designing with this device, place the gate-drive resistor close to the gate pin to suppress parasitic ringing, and ensure the drain pad has at least 1 square inch of continuous copper for proper thermal dissipation. Use a 10V gate drive for full enhancement into the rated R DS(on) curve. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IPD60R1K0PFD7SAUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD60R1K0PFD7SAUMA1 (same form factor and footprint) — differing in Package, Technology, RoHS Status, Drain-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD60R600PFD7SAUMA1
✅ Drop-In✓ In Stock
$0.45 / Unit
View Datasheet →IPD60R1K0PFD7SATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPD60R1K0PFD7SAUMA2
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPD60R360PFD7SAUMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPN70R2K0P7SATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →IPD60R1K0PFD7SAUMA1 Maximum Ratings & Electrical Characteristics
| Technology | CoolMOS PFD7 Superjunction (SJ) MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at TC | 4.7 A |
| Power Dissipation (PD) at TC | 26 W |
| Drain-Source On-Resistance (RDS(on)) | 1 Ω @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max gate-source) |
| Gate Charge (QG) | 6 nC @ VGS=10V |
| Output Capacitance (Coss) | 230 pF @ 400 V |
| Package | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (TJ) |
| Gate Drive Voltage (recommended) | 10 V (full enhancement) |
| RoHS Status | Compliant |
| Series | CoolMOS PFD7 consumer / superjunction |
IPD60R1K0PFD7SAUMA1 Pin Configuration
| Pin 1 | Gate (G) — MOSFET gate input; drive with 10V for full enhancement |
| Pin 2 | Drain (D) — MOSFET drain (also connected to metal tab); high-voltage node |
| Pin 3 | Source (S) — MOSFET source; typically tied to circuit ground / sense resistor |
Safe Operating Area (DC) — PG-TO252-3 (DPAK) on 1 sq.in. copper
Typical Applications
IPD60R1K0PFD7SAUMA1 is suitable for 6 applications: AC-DC Flyback Chargers and Adapters, LED Lighting Drivers, Small Motor Drives (White Goods / Pumps), Auxiliary and Standby SMPS, Cost-Optimized Industrial Power Conversion, Universal-Input Quasi-Resonant Converters.
AC-DC Flyback Chargers and Adapters
The IPD60R1K0PFD7SAUMA1 is an excellent primary-side switch for 5-15 W universal-input AC-DC flyback adapters targeting smartphone chargers and USB-PD applications. Its 600 V V DSS provides full margin over the 380-400 VDC bus that arises from rectified 230 VAC, while the 1 Ω RDS(on) keeps conduction loss in the primary switch under 1.5% at full load. The PFD7 family's fast body-diode recovery and 6 nC total gate charge reduce switching loss compared to older C6 platforms, enabling >90% efficiency at 90 VAC input. Recommended companion ICs include the XDPL8105 LED-driver controller and ICE5QR0680AGXUMA1 quasi-resonant flyback controller.
Recommended
LED Lighting Drivers
The IPD60R1K0PFD7SAUMA1 powers LED lighting drivers in the 10-20 W range, including downlights, panel lights, and bulb drivers operating from universal mains input. Its 600 V breakdown withstands line-transient surges up to 2 kV (with MOV clamping), and the integrated Zener-protected gate eliminates the need for external gate protection in cost-optimized designs. The 1 Ω RDS(on) enables slim linear-driver form factors where PCB area is constrained. The low Qoss of 230 pF at 400 V supports high-frequency switching up to 200 kHz in resonant LED driver topologies, enabling smaller magnetics.
Recommended
Small Motor Drives (White Goods / Pumps)
The IPD60R1K0PFD7SAUMA1 serves as the high-voltage switch in low-power universal motor drive circuits for white-goods applications such as small pumps, fans, and appliance motor controllers. Its 4.7 A continuous ID rating and 26 W power dissipation support inverter stages up to approximately 100 W input power. The superjunction PFD7 architecture provides superior body-diode ruggedness during motor back-EMF commutation events, reducing failure rates versus conventional planar MOSFETs in hard-switched bridge topologies.
Recommended
Auxiliary and Standby SMPS
The IPD60R1K0PFD7SAUMA1 is well-suited to auxiliary and standby power supplies in appliances, set-top boxes, and IoT gateways where a 5-15 W isolated converter supplies standby rails from rectified mains. Its 600 V breakdown comfortably handles wide-input bus variations (90-265 VAC), while the 1 Ω RDS(on) keeps standby consumption under 100 mW at no-load. The DPAK package enables compact flyback or quasi-resonant converters with primary-side switch footprints under 50 mm², supporting slim industrial design targets.
Recommended
Cost-Optimized Industrial Power Conversion
Industrial SMPS designs under 25 W — including HVAC control boards, sensor interfaces, and metering equipment — benefit from the IPD60R1K0PFD7SAUMA1's balance of voltage rating, RDS(on), and consumer-grade pricing. The PFD7 platform meets highest efficiency standards and supports high power density, enabling compact DIN-rail or panel-mount converter modules. Designers can leverage the DPAK package's standard land pattern for easy PCB layout migration when transitioning from older 600 V planar MOSFETs to this superjunction platform.
Recommended
Universal-Input Quasi-Resonant Converters
The IPD60R1K0PFD7SAUMA1 is purpose-built for quasi-resonant (QR) flyback converters targeting universal-input AC-DC designs. Its low Coss of 230 pF at 400 V enables higher switching frequencies at the QR valley with reduced switching loss, while the 6 nC gate charge supports valley-skipping operation to maintain efficiency across the full load range. The combination of fast body-diode recovery and integrated Zener gate protection simplifies QR topology design for 10-25 W adapters and consumer electronics power supplies.
Recommended
Recommended Products Summary
Engineering reference data for IPD60R1K0PFD7SAUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD60R600PFD7SAUMA1 | IPD60R360PFD7SAUMA1 | IPN70R2K0P7SATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3-equivalent (SOT-223) - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V - same | 600 V - same | 700 V (+17%) |
| On-Resistance (RDS(on)) max @ 10V | 1.0 Ω | 0.6 Ω (-40%) | 0.36 Ω (-64%) | 2.0 Ω (+100%) |
Key Differentiators
- Cost-optimized superjunction pricing for consumer markets (vs IPD60R600PFD7SAUMA1)
- Lower on-resistance at the cost of higher gate charge (vs IPD60R600PFD7SAUMA1)
- 600 V rating optimized for universal AC input (vs IPN70R2K0P7SATMA1 (700V))
Design Notes
At continuous 4.7 A drain current and 26 W power dissipation rating, the PG-TO252-3 (DPAK) package requires a substantial copper pour on the drain tab to stay within thermal limits. With a typical theta_JA of ~62 C/W on a 1-square-inch copper pour (estimated from standard DPAK thermal data), the junction-to-ambient thermal resistance gives a 10-15 C/W rise per watt of dissipation. Estimated: at 2 W power dissipation the junction rises ~30 C above ambient; at 5 W it rises ~75 C. A 0.5-1 sq.in. continuous copper area is mandatory; below 0.3 sq.in. the part will thermally limit long before reaching the rated current.
Keep the gate-drive loop (gate-pin to driver-ground) as small as possible — typical loop area should be under 0.5 cm². Place a 10-100 Ω gate-series resistor close to the gate pin to dampen parasitic ringing and limit peak dv/dt-induced current injection into the gate driver. The drain pad must be a continuous copper island with thermal vias to the bottom layer to spread heat. Keep the switching-node trace away from sensitive analog traces (sense resistors, feedback paths) and minimize the high-side drain trace length to reduce EMI loop area.
Do not exceed V GS=±20 V — the gate oxide is rated for absolute maximum ±20 V and overvoltage can permanently damage the device. Use a Zener clamp or dedicated gate-driver IC rather than relying on RC gate drives for high dv/dt applications. Avoid shorting the source tab and source pin to independent grounds, as this creates a parasitic source inductance that degrades switching performance. Finally, do not operate above the rated V DSS=600 V even momentarily — switching overshoots from leakage inductance can exceed 600 V during turn-off and cause avalanche breakdown; add a snubber or clamp circuit if needed.
For hard-switched flyback designs, place a small RCD snubber across the primary winding to clamp drain-voltage spikes below 600 V at the worst-case line input (265 VAC) and maximum load. The CoolMOS PFD7 family tolerates avalanche, but continuous operation in avalanche reduces long-term reliability. A 100-470 pF snubber capacitor in series with a 10-100 kΩ resistor across the transformer primary typically limits peak drain voltage to 80-85% of V DSS, leaving adequate margin.
Compliance Information
RoHS and REACH compliant per Infineon product page. Consumer-grade qualification only; for AEC-Q100 automotive applications consult Infineon automotive-grade PFD7 variants.
