IPD80R600P7ATMA1 vs IPA60R180P7SXKSA1 Comparison
Detailed side-by-side comparison of IPD80R600P7ATMA1 by Infineon and IPA60R180P7SXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD80R600P7ATMA1 | IPA60R180P7SXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-Source Voltage (VDS) | 800 V | 600 V |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | — |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | [DATA_NEEDED: typical VGS(th)] |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C (junction) |
| Package | PG-TO252-3 (DPAK) | PG-TO220-3-312 (Through-Hole, 3 leads) |
| Mounting Type | Surface Mount | Through Hole |
| Technology | CoolMOS P7 super-junction | Superjunction (SJ) N-channel MOSFET |
| Polarity | N-Channel | — |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 180 mOhm (max at 25C) |
| Power Dissipation (PD) at Tc | — | 26 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Channel Type | — | N-Channel |
| Configuration | — | Single |
| RoHS Status | — | Compliant |
| Lead-Free | — | Yes |