IPD80R750P7ATMA1 vs IPD80R600P7ATMA1 Comparison
Detailed side-by-side comparison of IPD80R750P7ATMA1 by Infineon and IPD80R600P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD80R750P7ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Series | CoolMOS P7 | β |
| Part Number | IPD80R750P7ATMA1 | β |
| FET Type | N-Channel | β |
| Technology | CoolMOS (Super-Junction) | CoolMOS P7 super-junction |
| Drain-Source Voltage (VDS) | 800 V | 800 V |
| Continuous Drain Current (ID) at TC=25C | 7 A | β |
| On-Resistance (RDS(on)) max at VGS=10V | 750 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typical) | 3 V (typical) |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | β |
| Power Dissipation (PD) at TC=25C | 51 W | β |
| Package / Case | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (TJ) | β |
| Gate Protection | Integrated Zener (ESD protected) | β |
| Packaging | Tape & Reel (ATMA1) | β |
| RoHS Status | Compliant | β |
| Continuous Drain Current (ID, Tc) | β | 8 A |
| Pulsed Drain Current (IDM) | β | 22 A |
| On-Resistance (RDS(on), max) | β | 600 mΞ© at VGS=10V |
| Maximum Power Dissipation (Ptot) | β | 60 W (Tc) |
| Maximum Gate-Source Voltage (VGS) | β | Β±30 V |
| Avalanche Energy, Single Pulse (EAS) | β | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | β | 0.17 mJ |
| Operating Temperature Range | β | -55 C to +150 C |
| Package | β | PG-TO252-3 (DPAK) |
| Polarity | β | N-Channel |
| MSL Level | β | 1 (per JEDEC J-STD-020) |