IPD80R750P7ATMA1 - 800V CoolMOS P7 MOSFET, 7A | Infineon
MPN: IPD80R750P7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.85 | $8.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.58 | $290.00 |
| 1,000 | $0.48 | $480.00 |
| 3,000 | $0.42 | $1,260.00 |
IPD80R750P7ATMA1 Overview
What is a super-junction MOSFET? A super-junction MOSFET is a power-MOSFET architecture that uses alternating P/N drift-region columns to break the traditional silicon limit of high-voltage MOSFETs. Unlike standard planar MOSFETs, the SJ design (popularized by Infineon as CoolMOS) achieves much lower RDS(on) per unit area at 500-950V ratings. The hierarchy is: MOSFET -> power MOSFET -> super-junction MOSFET -> power management discrete. CoolMOS P7 specifically targets low-power SMPS, LED drivers, and auxiliary power applications.
Key features include 800V drain-source breakdown voltage, 750 mOhm max RDS(on) at VGS=10V, integrated Zener-protected gate, low gate charge (Qg), and fast body diode. The P7 family improves on earlier P6 and C6 series with a 30% lower RDS(on) and significantly reduced switching losses. The integrated gate-source Zener clamps ESD and prevents over-voltage gate failure, eliminating the need for external gate protection in most designs.
From an architecture perspective, the IPD80R750P7 uses Infineon's latest 800V super-junction cell design with trench-filling epitaxial layers, reducing specific on-resistance (RDS(on)*Area) by approximately 40% versus the previous generation. The integrated gate Zener (typical clamping voltage 13-15V) provides ESD protection per HBM Class 2 and allows direct gate drive from standard 12V gate drivers without external protection networks.
Typical applications include AC-DC flyback converters, LED lighting drivers, auxiliary power supplies in white goods, industrial SMPS, and e-meter power stages. The 800V rating provides ample margin for universal-input (85-265VAC) rectified bus voltages up to 375V DC. The PG-TO252-3 (DPAK) package offers a thermally efficient surface-mount footprint with a tab that can be soldered directly to a copper pour for heat dissipation.
When designing with this part, consider the gate drive requirements: 10V VGS is required for full RDS(on) specification, and the integrated Zener clamps at approximately 15V. For hard-switched topologies above 50kHz, careful gate-loop layout and a small RC snubber may be required to limit dV/dt-induced ringing. The PG-TO252-3 package dissipates up to 51W at TC=25C with infinite heatsink.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon CoolMOS family, and practical design notes that go beyond what appears in the manufacturer datasheet.
Drop-in alternatives for IPD80R750P7ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD80R750P7ATMA1 (same form factor and footprint) — differing in Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD80R600P7ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.92 / Unit
View Datasheet →IPD80R450P7ATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPD80R900P7ATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPD65R380E6ATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →IPB60R280P7ATMA1
✅ Drop-In✓ In Stock
$0.88 / Unit
View Datasheet →IPD50N06S409ATMA2
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →IPD80R750P7ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS P7 |
| Part Number | IPD80R750P7ATMA1 |
| FET Type | N-Channel |
| Technology | CoolMOS (Super-Junction) |
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID) at TC=25C | 7 A |
| On-Resistance (RDS(on)) max at VGS=10V | 750 mOhm |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typical) |
| Power Dissipation (PD) at TC=25C | 51 W |
| Package / Case | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C (TJ) |
| Gate Protection | Integrated Zener (ESD protected) |
| Packaging | Tape & Reel (ATMA1) |
| RoHS Status | Compliant |
IPD80R750P7ATMA1 Pin Configuration
| Pin 1 | Gate — Gate input; integrated Zener-protected |
| Pin 2 | Drain — Drain connection (also connected to tab) |
| Pin 3 | Source — Source connection |
| Pin Tab | Drain — Drain (internally connected to pin 2; solder to copper pour for heatsinking) |
Safe Operating Area (TC=25C)
Typical Applications
IPD80R750P7ATMA1 is suitable for 6 applications: AC-DC Flyback Converter, LED Lighting Driver, Auxiliary Power Supply for White Goods, Industrial SMPS (5-50W), Smart Meter Power Stage, Battery Charger (Lead-Acid and Li-Ion).
AC-DC Flyback Converter
The IPD80R750P7ATMA1 is ideal for universal-input (85-265VAC) flyback converters up to 50W output. Its 800V drain-source rating provides a 200V+ safety margin above the 375V rectified DC bus, while the 750 mOhm RDS(on) limits conduction loss in continuous-conduction-mode (CCM) operation. The integrated Zener-protected gate eliminates external ESD clamping and works directly with standard 12V gate drivers like the IRS2109SPBF or 2EDN7533RXTMA1. The PG-TO252-3 package dissipates 51W at TC=25C, which is more than adequate when the exposed tab is soldered to at least 1 square inch of copper pour. Compared to older 600V MOSFETs, the 800V rating allows higher turns ratios in the flyback transformer, reducing primary RMS current and improving efficiency by 1-2%.
Recommended
LED Lighting Driver
The IPD80R750P7ATMA1 is well-suited for isolated and non-isolated LED drivers in the 20-50W power range used in commercial downlights, panel lights, and street-lighting ballasts. The 800V rating handles the rectified 220VAC bus (310V DC) with substantial margin for voltage transients from poor power-factor networks. The 750 mOhm RDS(on) keeps conduction loss manageable at typical LED driver switching frequencies (40-100kHz), and the low gate charge reduces driver losses in the PFC + flyback two-stage topologies common in commercial LED drivers. The integrated Zener-protected gate survives the ESD events common during LED module installation, improving field reliability. For higher-power LED drivers above 100W, the lower-RDS(on) IPD80R600P7ATMA1 in the same package is recommended for better efficiency.
Recommended
Auxiliary Power Supply for White Goods
The IPD80R750P7ATMA1 is widely used in the auxiliary/standby power supplies of white goods such as refrigerators, washing machines, and dishwashers. These applications require 5-15W isolated outputs (typically 12V/5V) from universal AC input, with high reliability and low standby power. The 800V VDS rating handles the 375V rectified bus with margin, while the 750 mOhm RDS(on) supports a 5-7W output at 100kHz switching frequency with acceptable efficiency. The integrated Zener-protected gate is particularly valuable here, as white-goods environments often have high humidity and ESD events during installation. The PG-TO252-3 package is fully compatible with automated SMT lines, reducing assembly cost. The 18+ year CoolMOS heritage and Infineon's industrial-grade reliability data make this part a low-risk BOM choice for high-volume white-goods production.
Recommended
Industrial SMPS (5-50W)
The IPD80R750P7ATMA1 serves as the primary switch in industrial-grade switch-mode power supplies (SMPS) used in PLCs, industrial sensors, factory-automation controllers, and low-power industrial inverters. Its 800V rating provides robust operation on 230VAC and 400VAC industrial mains, with surge withstand capability. The CoolMOS P7's 30% lower RDS(on) versus the previous P6 generation improves full-load efficiency by 0.5-1%, helping designs meet 80-Plus and ErP efficiency standards. The integrated Zener gate protection reduces BOM count by one or two components compared to parts requiring external gate clamping. The PG-TO252-3 surface-mount package supports reflow soldering and is compatible with high-volume automated manufacturing, while the exposed thermal tab provides adequate cooling at 25W continuous power with a modest copper pour.
Recommended
Smart Meter Power Stage
The IPD80R750P7ATMA1 is commonly used in the isolated power supply section of single-phase and three-phase smart electricity meters, where it converts 110-230VAC into a 3.3V/5V/12V auxiliary rail. The 800V VDS rating handles the rectified mains with substantial margin for surge events common in grid environments. The 750 mOhm RDS(on) keeps conduction loss low in the high-frequency flyback converter (typically 65-100kHz) that feeds the meter's MCU, communication module, and metrology circuits. The integrated Zener-protected gate improves field reliability in the harsh electrical environment of a meter socket. The PG-TO252-3 surface-mount package allows miniaturized designs that fit within the meter's constrained form factor. Combined with Infineon's ISO7816-compliant smart-meter companion ICs, the IPD80R750P7ATMA1 enables a fully Infineon-sourced power-and-metrology BOM.
Recommended
Battery Charger (Lead-Acid and Li-Ion)
The IPD80R750P7ATMA1 is used in the primary-side switch of AC-input battery chargers for e-bikes, e-scooters, portable tools, and small UPS systems. Its 800V rating handles universal AC input with margin, and the 750 mOhm RDS(on) is appropriate for the 30-65W power range typical of these applications. The integrated Zener gate protection improves reliability against the voltage transients common when chargers are connected to long AC cables. The PG-TO252-3 package supports automated SMT assembly, reducing the manufacturing cost of high-volume consumer chargers. The CoolMOS P7 platform's low reverse-recovery charge (Qrr) reduces switching loss in continuous-conduction-mode (CCM) flyback designs, improving efficiency by 0.5-1% compared to previous-generation MOSFETs. For chargers requiring higher efficiency, the IPD80R600P7ATMA1 in the same package provides 20% lower conduction loss.
Recommended
Recommended Products Summary
Engineering reference data for IPD80R750P7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD80R600P7ATMA1 | IPD80R450P7ATMA1 | IPD80R900P7ATMA1 | IPD65R380E6ATMA1 | IPB60R280P7ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Drain-Source Voltage (VDS) | 800 V | 800 V | 800 V | 800 V | 650 V | 600 V |
| On-Resistance (RDS(on)) max at VGS=10V | 750 mOhm | 600 mOhm | 450 mOhm | 900 mOhm | 380 mOhm | 280 mOhm |
| Continuous Drain Current (ID) at TC=25C | 7 A | 8 A | 11 A | 6 A | 10 A | 16 A |
| Power Dissipation (PD) at TC=25C | 51 W | 57 W | 68 W | 44 W | 62 W | 83 W |
| Series / Technology | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | CoolMOS E6 | CoolMOS P7 |
| Gate Protection | Integrated Zener | Integrated Zener | Integrated Zener | Integrated Zener | Integrated Zener | Integrated Zener |
Key Differentiators
- Lower RDS(on) at same voltage class (vs IPD80R600P7ATMA1)
- 800V voltage rating for universal input (vs IPB60R280P7ATMA1)
- CoolMOS P7 latest-generation technology (vs IPD65R380E6ATMA1)
Design Notes
Estimated: At 25C ambient, a PG-TO252-3 footprint with 1 square inch of 2oz copper pour on a standard 1.6mm FR-4 PCB achieves approximately 50-60 C/W theta_JA. At 3W continuous dissipation, junction temperature rises 150-180C above ambient, potentially exceeding 150C max TJ. For reliable operation above 2W, either increase copper area to 2-3 square inches, add external heatsinking, or limit continuous dissipation to under 1.5W. Always verify thermal performance in the final assembly with a thermocouple measurement.
The PG-TO252-3 package has a tab internally connected to the drain (pin 2). Solder this tab to a copper pour on the PCB to provide the thermal path. The gate-source turn-off path is sensitive to parasitic inductance; keep the gate-driver-to-gate trace short (under 5mm) and use a ground return path directly back to the driver IC ground pin. Add a 10-100 Ohm gate resistor to control dV/dt-induced ringing and to damp the gate-source LC tank formed by the lead inductance and input capacitance.
Do not exceed the maximum VDS of 800V - even brief overshoot can cause avalanche breakdown and eventual failure. Add a primary-side RCD snubber or clamp across the flyback transformer primary to limit drain voltage spikes during the turn-off transient. For hard-switched topologies above 50kHz, measure the actual dV/dt with a high-voltage probe and ensure it stays below 5-10 kV/us to avoid problems with body-diode reverse-recovery-induced ringing. The integrated gate Zener clamps at approximately 15V, so use a gate driver that produces 10-12V VGS, not 15V or higher.
Compliance Information
RoHS compliant per Infineon product page. Industrial grade, not AEC-Q100 qualified - choose automotive-qualified parts for vehicle applications.
