IPL65R115CFD7AUMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of IPL65R115CFD7AUMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL65R115CFD7AUMA1

IPL65R115CFD7AUMA1 - 650V 24A 115mΞ© CoolMOS CFD7 | Infineon

IPL65R115CFD7AUMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter IPL65R115CFD7AUMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.70 $0.41
FET Type N-Channel N-Channel
Technology CoolMOS CFD7 (Superjunction) Trench MOSFET, silicon
Drain-to-Source Voltage (VDS) 650 V β€”
Continuous Drain Current (ID, Tc) 24 A β€”
Power Dissipation (PD, Tc) 144 W β€”
On-State Resistance (RDS(on)) 115 mΞ© at VGS=10V, ID=9.7A β€”
Gate-Source Voltage (VGS) Β±20 V (max) β€”
Gate-Source Threshold (VGS(th)) 3.5 V (typ) β€”
Body Diode Integrated Fast Recovery β€”
Operating Temperature Range -55 Β°C to +150 Β°C (TJ) -55 Β°C to +175 Β°C (TJ)
Package PG-VSON-4 (VSON-4 EP) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) MSL 1 (per JEDEC J-STD-020)
RoHS Status Compliant β€”
Lead-Free Yes β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 7 Power-Transistor
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
Continuous Drain Current (ID) at TC β€” 256 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
RoHS Compliance β€” Compliant (per Infineon product page)

Datasheets & Resources

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