IPP147N12N3GXKSA1 vs IPP120N08S403AKSA1 Comparison
Detailed side-by-side comparison of IPP147N12N3GXKSA1 by Infineon and IPP120N08S403AKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 β ActiveSpecification Comparison
| Parameter | IPP147N12N3GXKSA1 | IPP120N08S403AKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.28 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| Technology | OptiMOS 3 trench MOSFET | β |
| Transistor Type | N-Channel MOSFET | N-Channel Enhancement Mode |
| Configuration | Single with built-in diode | β |
| Drain-to-Source Voltage (Vdss) | 120 V | β |
| Continuous Drain Current (Id) at Tc=25C | 56 A | β |
| Continuous Drain Current (Id) at Ta | 56 A (Ta, per DigiKey listing) | β |
| Power Dissipation (Pd) at Tc=25C | 107 W | β |
| Operating Temperature Range | [DATA_NEEDED: Tj max and operating range] | β |
| Package | PG-TO220-3 (through-hole) | TO-220-3-1 (PG-TO220-3-1) |
| Mounting Type | Through Hole | Through Hole |
| Number of Pins | 3 (3+Tab) | β |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | β |
| Rds(on) max | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] | β |
| Vgs(th) (Gate Threshold) | [DATA_NEEDED: typical gate threshold voltage] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: typical Ciss] | 11550 pF at VDS=25 V |
| Output Capacitance (Coss) | [DATA_NEEDED: typical Coss] | β |
| Reverse Recovery (trr) | [DATA_NEEDED: body-diode reverse recovery time] | β |
| Avalanche Energy Rating | Single-pulse avalanche rated | β |
| RoHS Status | Compliant (per distributor listing suffixes XKSA1) | Compliant (Green Product) |
| Lead-Free | Yes | β |
| Qualification | Automotive grade (per datasheet.live listing 'Automotive') | β |
| Packing Method | Tube | β |
| Part Family | β | OptiMOS Power MOSFET |
| Drain-to-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc) | β | 120 A |
| Power Dissipation (PD, Tc) | β | 278 W |
| On-State Resistance (RDS(on)) | β | 2.8 mOhm at VGS=10 V, ID=100 A |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Total Gate Charge (Qg) | β | 167 nC at VGS=10 V |
| Operating Junction Temperature | β | -55 C to +175 C |
| Pin Count | β | 3 |
| MSL Level | β | MSL1 (peak reflow 260 C) |
| Automotive Qualification | β | AEC-Q101 |
| Avalanche Tested | β | 100% Avalanche Tested |