IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS
MPN: IPP120N08S403AKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.82 | $182.00 |
| 500 | $1.55 | $775.00 |
| 1,000 | $1.28 | $1,280.00 |
Drop-in alternatives for IPP120N08S403AKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPI120N08S403AKSA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPP120N08S4-03
✅ Drop-In📋 Reference alternative (not in catalog)
IPP147N12N3GXKSA1
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IPW60R041C6FKSA1
✅ Drop-In✓ In Stock
$5.4 / Unit
View Datasheet →IPB120N10S405ATMA1
✅ Drop-In✓ In Stock
$2.1 / Unit
View Datasheet →IPP120N08S403AKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS Power MOSFET |
| Transistor Type | N-Channel Enhancement Mode |
| Drain-to-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc) | 120 A |
| Power Dissipation (PD, Tc) | 278 W |
| On-State Resistance (RDS(on)) | 2.8 mOhm at VGS=10 V, ID=100 A |
| Gate-Source Voltage (VGS) | +/-20 V |
| Total Gate Charge (Qg) | 167 nC at VGS=10 V |
| Input Capacitance (Ciss) | 11550 pF at VDS=25 V |
| Operating Junction Temperature | -55 C to +175 C |
| Package | TO-220-3-1 (PG-TO220-3-1) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| MSL Level | MSL1 (peak reflow 260 C) |
| Automotive Qualification | AEC-Q101 |
| RoHS Status | Compliant (Green Product) |
| Avalanche Tested | 100% Avalanche Tested |
IPP120N08S403AKSA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate control input; drive to +10 V for full enhancement |
| Pin 2 | Drain — MOSFET drain; also electrically connected to the metal mounting tab |
| Pin 3 | Source — MOSFET source; main current return path |
Safe Operating Area - IPP120N08S403AKSA1
Typical Applications
IPP120N08S403AKSA1 is suitable for 7 applications: Automotive 12V / 24V Battery Switching, Electric Power Steering (EPS) Motor Drive, High-Current DC-DC Buck Converter, Industrial High-Side Load Switch, Brushless DC (BLDC) Motor Drive, Telecom Hot-Swap Controller Output Switch, Solar Charge Controller / Battery Disconnect.
Automotive 12V / 24V Battery Switching
The IPP120N08S403AKSA1's 80 V VDS rating, 120 A continuous drain current, and AEC-Q101 qualification make it ideal for automotive battery switching between 12 V and 24 V rails. The 2.8 mOhm RDS(on) at VGS=10 V keeps conduction loss at roughly 28 W per device at full 100 A load, which is acceptable with a modest clip-on heatsink. Designers typically place the MOSFET in the high-side path between battery and load, using a gate driver that swings the gate to 10 V with at least 1 A peak current to switch the 167 nC Qg within 200 ns. Compared to a relay, the part offers silent operation, longer life, and faster switching.
Recommended
Electric Power Steering (EPS) Motor Drive
EPS systems require a rugged, AEC-Q101-qualified MOSFET capable of PWM-switching at 20 kHz with peak currents up to 80 A on the motor windings. The IPP120N08S403AKSA1's low 2.8 mOhm RDS(on) and 167 nC Qg keep switching losses manageable at 20 kHz, while the 175 C junction rating provides headroom for the underhood thermal environment. The device is typically used in a three-phase bridge with three half-bridges, switched by gate drivers such as the 1EDI20N12AFXUMA1. The 100% avalanche rating gives extra margin when freewheeling motor inductive kickback during commutation events.
Recommended
High-Current DC-DC Buck Converter
For 48 V to 12 V or 24 V to 12 V buck converters delivering up to 100 A output current, the IPP120N08S403AKSA1's low RDS(on) and high ID rating make it a strong low-side switch candidate. The 80 V VDS rating easily supports 48 V nominal input with transients up to 60 V. Designers select a switching frequency between 50 kHz and 250 kHz and use a gate driver capable of 3-5 A peak current to keep switching transition times below 50 ns. The TO-220 package simplifies thermal attachment via clip-on heatsink, which is essential for dissipating the 30-50 W typical in this topology.
Recommended
Industrial High-Side Load Switch
In industrial 24 V load-switch applications, the IPP120N08S403AKSA1 serves as a high-side or low-side switch with 120 A current handling and 80 V VDS headroom for inductive loads. The AEC-Q101 qualification, while nominally automotive, also meets industrial reliability expectations including 175 C junction operation. A typical application places the part in the high-side path with a 10 kohm gate pull-down resistor to prevent false turn-on during transients. The 100% avalanche rating absorbs the energy stored in the load inductance when switching off, eliminating the need for an external freewheeling TVS in many cases.
Recommended
Brushless DC (BLDC) Motor Drive
BLDC motor drives for industrial fans, pumps, and e-bikes often use a three-phase bridge with N-channel MOSFETs on the low-side and either N-channel or P-channel on the high-side. The IPP120N08S403AKSA1 fits the low-side role with its 120 A continuous rating and 2.8 mOhm RDS(on), which minimizes the I-squared-R losses at high torque demands. The 80 V VDS rating covers 24 V and 48 V battery systems with comfortable margin. Designers pair the MOSFET with a three-phase gate driver such as the IRS2302STRPBF or the 1EDI20N12AFXUMA1 to maintain sharp switching transitions and minimize dead-time losses.
Recommended
Telecom Hot-Swap Controller Output Switch
In 48 V telecom hot-swap and OR-ing applications, the IPP120N08S403AKSA1 can act as the main pass MOSFET handling the inrush current and steady-state load. The 80 V VDS easily exceeds the 48 V nominal plus transient peaks to 60 V. The low RDS(on) reduces steady-state dissipation to roughly 4.5 W at 40 A load, well within the 278 W rating. The avalanche-rated body diode supports OR-ing configurations where two power sources are paralleled through back-to-back MOSFETs. Designers add an external TVS or RC snubber if the application routinely experiences surge events above the 80 V maximum.
Recommended
Solar Charge Controller / Battery Disconnect
Solar charge controllers for off-grid and residential PV systems use the IPP120N08S403AKSA1 as a low-loss disconnect switch between the battery bank and the load. The 80 V rating covers 24 V and 48 V battery stacks with substantial margin, and the 2.8 mOhm RDS(on) minimizes the always-on conduction loss. The AEC-Q101 qualification and 175 C junction rating ensure long-term reliability in outdoor enclosures subject to wide temperature swings. A typical design PWM-switches the MOSFET at low duty to implement soft-start, with the device fully on during steady-state to dissipate less than 5 W at typical 40 A load.
Recommended
Recommended Products Summary
Engineering reference data for IPP120N08S403AKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPI120N08S403AKSA1 | IPP120N08S4-03 | IPP147N12N3GXKSA1 | IPW60R041C6FKSA1 | IPB120N10S405ATMA1 |
|---|---|---|---|---|---|---|
| Package | TO-220-3-1 (PG-TO220-3-1) | TO-262 (I2PAK) - same die, surface mount | TO-220-3-1 - same | TO-220-3-1 - same | TO-220-3-1 - same | D2PAK-3 - similar family, surface mount |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-to-Source Voltage (VDS) | 80 V | 80 V - same | 80 V - same | 120 V - higher (+50%) | 600 V - much higher (high-voltage PFC) | 100 V - slightly higher (+25%) |
| Continuous Drain Current (ID) | 120 A | 120 A - same | 120 A - same | 80 A - lower (-33%) | 50 A - lower (-58%) | 120 A - same |
| On-State Resistance (RDS(on)) | 2.8 mOhm | 2.8 mOhm - same | 2.8 mOhm - same | 8 mOhm - higher (+186%) | 41 mOhm - much higher | 4 mOhm - higher (+43%) |
| Total Gate Charge (Qg) | 167 nC | 167 nC - same | 167 nC - same | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 - same | AEC-Q101 - same | AEC-Q101 - same | Industrial - not AEC-Q100/Q101 | AEC-Q101 - same |
| Operating Junction Temperature | 175 C | 175 C - same | 175 C - same | 175 C - same | 150 C - lower | 175 C - same |
| Mounting Type | Through Hole | Surface Mount (TO-262) | Through Hole - same | Through Hole - same | Through Hole - same | Surface Mount (D2PAK) |
| Approx. Unit Price (1 pc) | USD 2.45 | USD 2.60 | USD 2.45 | USD 3.10 | USD 3.85 | USD 2.95 |
Key Differentiators
- AEC-Q101 qualified with 175 C junction rating (vs IPW60R041C6FKSA1)
- Ultra-low RDS(on) of 2.8 mOhm at 100 A (vs IPP147N12N3GXKSA1)
- Through-hole TO-220 for high-current screw-mount assembly (vs IPI120N08S403AKSA1)
Design Notes
Estimated: at 80 A continuous current with 2.8 mOhm RDS(on) and VGS=10 V, conduction loss is approximately 80*80*0.0028 = 17.9 W. The TO-220-3-1 package has a typical junction-to-case thermal resistance of about 0.45 C/W; without a heatsink the junction-to-ambient is roughly 62 C/W, giving 17.9 W x 62 C/W = 1110 C temperature rise - far above the 175 C limit. A clip-on heatsink with thermal resistance <= 5 C/W is therefore mandatory. With a 5 C/W heatsink, total junction-to-ambient is about 5.45 C/W and the temperature rise drops to roughly 17.9 x 5.45 = 97 C above ambient - acceptable for an 85 C max ambient.
Use a Kelvin-source connection whenever the layout permits - route the gate-drive return to a dedicated source-sense bond wire rather than the main source bond pad. This decouples the gate-charge loop from the high-current source path, reducing parasitic-induced gate oscillations and improving switching edge cleanliness. Keep the gate-driver output traces short and place a 10 ohm gate-series resistor to damp residual ringing. The exposed drain tab should be mated to a heatsink with thermal compound (e.g., 0.05 mm thermal interface material) and either grounded to drain or isolated with a mica/keratherm washer if the heatsink is at a different potential.
Never exceed the +/-20 V VGS absolute maximum rating, even briefly during switching transients. Use a gate-source Zener clamp (e.g., 16 V) on every MOSFET to protect against gate-oxide rupture from Miller-effect-induced voltage spikes during fast dV/dt events. Do not parallel multiple IPP120N08S403AKSA1 devices without source-balancing resistors; the 2.8 mOhm RDS(on) has a positive temperature coefficient, which helps thermal stability but requires careful layout symmetry. Finally, derate VDS by at least 20% for inductive switching applications to account for ringing above the DC bus voltage.
When designing the PCB, use wide copper pours on the drain and source pads to minimize trace resistance and spread heat. A 2 oz copper pour of at least 100 mm^2 on each terminal reduces the trace contribution to total RDS(on) by approximately 0.1 mOhm and improves thermal spreading. Place the gate driver within 20 mm of the gate pin to minimize the gate-loop inductance; this inductance resonates with Ciss (11550 pF) at frequencies that can cause false triggering if not damped. Add a small RC snubber (10 ohm + 1 nF) across drain-source if the application operates in continuous hard-switching above 100 kHz.
Compliance Information
AEC-Q101 qualified (not AEC-Q100 - Q101 is the discrete semiconductor equivalent of Q100). MSL1 rated per JEDEC J-STD-020. Green Product designation per Infineon. 100% avalanche-tested per datasheet. Operating junction temperature 175 C exceeds the 150 C commercial-grade limit.
