IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
MPN: IPP147N12N3GXKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.85 | $925.00 |
| 1,000 | $1.62 | $1,620.00 |
IPP147N12N3GXKSA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or convert electrical energy in switching-mode power supplies, motor drives, and load switching circuits. As an N-channel enhancement-mode device, this MOSFET turns on when a positive gate-to-source voltage (Vgs) is applied, and it is the workhorse building block of switched-mode power conversion. Within the broader taxonomy it belongs to: power MOSFET -> MOSFET -> discrete semiconductor -> power management component. The 120 V drain rating places it in the medium-voltage tier suitable for 24 V / 48 V bus systems and telecom rectifier stages.
Key differentiating features include Infineon's OptiMOS 3 trench technology for low Rds(on) per unit silicon area, a fully avalanche-rated body diode for unclamped inductive switching, and low gate charge for reduced driver losses at high switching frequencies. The PG-TO220-3 package provides a low thermal resistance path and is suitable for through-hole mounting on heatsinks in industrial-grade converters.
Typical applications include synchronous rectification in switch-mode power supplies (SMPS), DC-DC converter high-side and low-side switches, motor drive H-bridges, solenoid drivers, and battery protection circuits in e-mobility and industrial automation. In each application the device's 120 V rating provides generous design margin for 48 V telecom buses or 24 V industrial rails.
When designing with this part, pay attention to gate-drive voltage levels: standard logic-level drive may not fully enhance the channel - consult the datasheet for the recommended Vgs range and required gate-charge energy. The PG-TO220-3 package should be mounted on a sufficiently rated heatsink when continuous dissipation exceeds 2-3 W.
This page synthesizes distributor pricing, drop-in alternative sourcing, and practical design notes drawn from manufacturer datasheets and real distributor listings - context that goes beyond the raw datasheet.
Drop-in alternatives for IPP147N12N3GXKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPP147N12N3GXKSA1 (same form factor and footprint) β differing in Package, Drain-Source Voltage (VDS), Operating Temperature Range, Technology, RoHS Status.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPP147N12N3 G
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IPP110N12N3 G
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IPP083N12N3 G
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IRFB3813PBF
β Drop-Inπ Reference alternative (not in catalog)
IRF3813PBF
β Drop-Inπ Reference alternative (not in catalog)
IPP147N12N3GXKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS |
| Technology | OptiMOS 3 trench MOSFET |
| Transistor Type | N-Channel MOSFET |
| Configuration | Single with built-in diode |
| Drain-to-Source Voltage (Vdss) | 120 V |
| Continuous Drain Current (Id) at Tc=25C | 56 A |
| Continuous Drain Current (Id) at Ta | 56 A (Ta, per DigiKey listing) |
| Power Dissipation (Pd) at Tc=25C | 107 W |
| Package | PG-TO220-3 (through-hole) |
| Mounting Type | Through Hole |
| Number of Pins | 3 (3+Tab) |
| Avalanche Energy Rating | Single-pulse avalanche rated |
| RoHS Status | Compliant (per distributor listing suffixes XKSA1) |
| Lead-Free | Yes |
| Qualification | Automotive grade (per datasheet.live listing 'Automotive') |
| Packing Method | Tube |
IPP147N12N3GXKSA1 Pin Configuration
| Pin 1 | Gate β MOSFET gate (voltage-controlled input) |
| Pin 2 | Drain β MOSFET drain (high-voltage terminal, internally connected to the tab) |
| Pin 3 | Source β MOSFET source (low-voltage / reference terminal) |
Safe Operating Area (estimated, datasheet values to be confirmed)
Typical Applications
IPP147N12N3GXKSA1 is suitable for 6 applications: Synchronous Rectifier in 48V SMPS, 24V Industrial Motor Drive H-Bridge, 12V/24V Automotive Load Switch, Battery Protection and Hot-Swap Controller, Solar Inverter DC-Side Switch, Telecom 48V Hot-Swap Distribution.
Synchronous Rectifier in 48V SMPS
The IPP147N12N3GXKSA1 is well-suited as the synchronous-rectifier MOSFET in the secondary side of 48V telecom isolated DC-DC converters. Its 120V Vdss rating provides a 2.5x safety margin over the nominal 48V bus, accommodating transient overshoot from transformer leakage inductance without avalanche breakdown. The 56A continuous Id comfortably handles 30-40A rectifier currents typical of 1-2kW telecom bricks, while the OptiMOS 3 cell structure keeps Rds(on) low to maximize efficiency. Compared to Schottky-diode rectification, this MOSFET-based synchronous rectification typically improves full-load efficiency by 3-5 percentage points. Place the device on a TO-220 heatsink sized to keep junction temperature below 110C at worst-case load and ambient.
Recommended
24V Industrial Motor Drive H-Bridge
In a 24V brushed or BLDC motor H-bridge, the IPP147N12N3GXKSA1 serves as both the high-side and low-side switching element. Its 120V drain rating easily tolerates the back-EMF spikes from 24V motors (where inductive transients can reach 80-100V during PWM switching), and the 56A continuous current supports motors drawing up to 30-40A RMS in industrial automation. The PG-TO220-3 package bolts directly to a chassis-mounted heatsink, providing rugged mechanical mounting in factory-floor equipment. Single-pulse avalanche ruggedness protects the device during hard commutation events when the motor is suddenly de-energized.
Recommended
12V/24V Automotive Load Switch
The IPP147N12N3GXKSA1's automotive-grade qualification makes it a natural choice for high-current load switching in 12V and 24V vehicle electrical systems. Applications include controlling heater elements, cooling fans, solenoid valves, and lighting loads drawing tens of amps. The 120V Vdss provides exceptional transient immunity against load-dump surges (which can reach 40V in 12V systems and 80V in 24V systems), while the 56A rating covers most automotive power loads. Place a TVS diode or freewheeling clamp across inductive loads to protect the body diode during switching.
Recommended
Battery Protection and Hot-Swap Controller
In 24V or 48V battery packs and hot-swap circuits, the IPP147N12N3GXKSA1 functions as the main disconnect switch. The built-in body diode conducts inrush current during board insertion, and once the gate is fully enhanced, the MOSFET's low Rds(on) minimizes steady-state conduction loss. The 120V rating handles the open-circuit voltage of stacked battery configurations, and the avalanche rating protects against the inductive kick when hot-plugging into a charged bus. Use an NTC thermistor and gate-drive circuit to limit inrush and prevent SOA violation during plug-in events.
Recommended
Solar Inverter DC-Side Switch
In small-to-medium string solar inverters, the IPP147N12N3GXKSA1 serves as the DC-side disconnect switch between the PV string and the inverter's DC-DC stage. With 120V Vdss and 56A continuous current, the device handles typical residential string voltages up to 80V open-circuit with significant margin. The low Rds(on) minimizes DC-side conduction loss, contributing to overall inverter efficiency. The PG-TO220-3 package provides excellent thermal dissipation when bolted to the inverter chassis, simplifying mechanical design. Add a gate-source Zener and resistor network to prevent spurious turn-on during DC-side transients.
Recommended
Telecom 48V Hot-Swap Distribution
In telecom -48V distribution racks, the IPP147N12N3GXKSA1 functions as the inrush-limiting and fault-isolation switch for plug-in line cards and power modules. The 120V drain rating exceeds the -75V worst-case telecom battery voltage with margin, and the 56A current rating supports multi-hundred-watt plug-in modules. During hot-plug events, the device operates in its linear region briefly while the output capacitors charge, requiring careful SOA analysis to avoid exceeding the thermal limit. The built-in body diode provides a path for back-feeding during parallel-redundancy configurations, simplifying the OR-ing topology.
Recommended
Recommended Products Summary
Engineering reference data for IPP147N12N3GXKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP147N12N3 G | IPP110N12N3 G | IPP083N12N3 G | IRFB3813PBF |
|---|---|---|---|---|---|
| Package | PG-TO220-3 (through-hole) | PG-TO220-3 - same | PG-TO220-3 - same | PG-TO220-3 - same | TO-220 - same footprint family |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon (formerly IR) |
| Drain-to-Source Voltage (Vdss) | 120 V | 120 V | 120 V | 120 V | 100 V (-17%) |
| Technology | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 3 trench | HEXFET (planar) |
| Automotive Qualification | Yes (Automotive grade) | Yes | Yes (OptiMOS family) | Yes (OptiMOS family) | Industrial (non-automotive) |
| Approximate Unit Price (USD) | $2.95 (1 pc, DigiKey) | ~$2.95 | ~$2.50 (lower-Rds-on is more expensive - inverted here for higher Rds-on) | ~$3.40 | ~$3.20 |
Key Differentiators
- Automotive-grade qualification within OptiMOS 3 family (vs IRFB3813PBF (Industrial HEXFET))
- Lower on-resistance per unit silicon area (trench vs planar) (vs IRFB3813PBF (HEXFET planar technology))
- 120V Vdss provides 20V margin over 100V-rated alternatives (vs IRFB3813PBF (100V Vdss))
Design Notes
Estimated: at Vds=48V and Id=20A continuous with Rds(on)=10 mOhm, conduction loss is approximately 4W. The PG-TO220-3 package typically has theta_JA around 62 C/W without a heatsink and 1-5 C/W when mounted to a properly sized aluminum heatsink with thermal compound. Add a small clip-on or chassis-mounted heatsink for continuous operation above 2-3W dissipation. Verify with the datasheet thermal-resistance values once available.
For through-hole TO-220 mounting, ensure the drain tab copper-pad area is at least 1 square inch of 2-oz copper to spread heat from the tab. If the TO-220 is mounted to a free-standing heatsink via a mounting hole, ensure the heatsink tab area still connects to the drain copper pour to maximize heat spreading. Keep gate-drive traces short (under 25mm) and route them away from drain-node switching transients to avoid capacitive coupling that can cause spurious turn-on in half-bridge configurations.
Common pitfalls with the IPP147N12N3GXKSA1 include: (1) driving the gate directly from a 3.3V MCU GPIO without a gate-driver stage - the datasheet's Vgs(th) is typically 2-4V and full enhancement requires 10V; (2) forgetting to add a gate-source resistor (10-100kOhm) to keep the MOSFET off when the gate driver is in high impedance; (3) omitting a freewheeling or TVS diode across inductive loads, leading to avalanche-induced failures; (4) underestimating SOA during inrush events such as capacitor charging or motor startup.
In half-bridge or synchronous-rectifier layouts, place the high-side and low-side MOSFETs as close together as the package allows to minimize the high-dV/dt switching loop. Use a low-inductance gate-drive loop with the gate resistor placed directly between the driver output and the gate pin. Add a small RC snubber (10-100 Ohm in series with 1-10 nF) across the drain-source of each MOSFET to damp ringing caused by package and PCB parasitic inductance.
Compliance Information
RoHS compliance confirmed by the XKSA1 suffix code in the MPN. Automotive qualification per datasheet.live listing. REACH, halogen-free, and conflict-minerals compliance not explicitly stated in provided data - flagged as 'unknown'.
