IPP60R180P7XKSA1 vs IPB60R280P7ATMA1 Comparison

Detailed side-by-side comparison of IPP60R180P7XKSA1 by Infineon and IPB60R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB60R280P7ATMA1 IPB60R280P7ATMA1 - 600V 280mOhm CoolMOS P7 MOSFET | Infineon

IPB60R280P7ATMA1 - 600V 280mOhm CoolMOS P7 MOSFET | Infineon

IPB60R280P7ATMA1 βœ“ Active

Specification Comparison

Parameter IPP60R180P7XKSA1 IPB60R280P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.30 $0.88
Manufacturer Infineon Technologies Infineon Technologies
Technology CoolMOS P7 (Superjunction N-Channel) Superjunction (SJ)
Drain-Source Voltage (VDS) 600 V β€”
Continuous Drain Current (ID) at TC=25Β°C 18 A β€”
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current at TC=25Β°C] β€”
On-Resistance RDS(on) max at VGS=10V 180 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 3.5 V β€”
Gate Charge Qg typ [DATA_NEEDED: total gate charge at VGS=10V] β€”
Power Dissipation PD at TC=25Β°C 72 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C -55 Β°C to +150 Β°C (T_j max)
Package PG-TO220-3 (through-hole) PG-TO263-3 (D2PAK)
Mounting Type Through Hole Surface Mount
Number of Pins 3 (Gate, Drain, Source) β€”
Avalanche Energy Rated Yes β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
MSL Level N/A (through-hole) β€”
Product Family β€” CoolMOS P7 (600 V)
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (V_DSS) β€” 600 V
Continuous Drain Current (I_D, T_C=25Β°C) β€” 12 A
On-Resistance R_DS(on) max (V_GS=10V) β€” 280 mOhm
Gate-Source Threshold V_GS(th) typ β€” 3.5 V
Power Dissipation P_D (T_C=25Β°C) β€” 53 W
Pin Count β€” 3 (2 + Tab)
Configuration β€” Single N-Channel
Generation β€” 7th Gen CoolMOS (successor to P6)

Datasheets & Resources

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