IPP60R180P7XKSA1 - 600V 18A 180mΩ CoolMOS P7 MOSFET | Infineon
MPN: IPP60R180P7XKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.65 | $2.65 |
| 10 | $2.3 | $23.00 |
| 100 | $1.85 | $185.00 |
| 500 | $1.55 | $775.00 |
| 1,000 | $1.3 | $1,300.00 |
Drop-in alternatives for IPP60R180P7XKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPP60R190P6XKSA1
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View Datasheet →IPP60R180P7XKSA1
✅ Drop-In✓ In Stock
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View Datasheet →IPP60R280P7XKSA1
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IPA60R190C6XKSA1
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R6015KNX
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IPP60R180P7XKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Technology | CoolMOS P7 (Superjunction N-Channel) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | 3.5 V |
| Power Dissipation PD at TC=25°C | 72 W |
| Operating Temperature Range | -55 °C to +150 °C |
| Package | PG-TO220-3 (through-hole) |
| Mounting Type | Through Hole |
| Number of Pins | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | Yes |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | N/A (through-hole) |
IPP60R180P7XKSA1 Pin Configuration
| Pin 1 | Gate — Gate drive input - apply 10V-15V to enhance, 0V to turn off |
| Pin 2 | Drain — Power drain terminal - also electrically connected to the metal tab/backside |
| Pin 3 | Source — Source terminal - return path for gate drive and load current |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IPP60R180P7XKSA1 is suitable for 6 applications: Power Factor Correction (PFC) Boost Stage, Server & Telecom SMPS Primary Switch, Solar Micro-Inverter DC-DC Boost, Industrial LED Lighting Driver, EV Charging Station Auxiliary Power, Welding & Plasma Cutting Inverter.
Power Factor Correction (PFC) Boost Stage
The IPP60R180P7XKSA1 is purpose-built for continuous-conduction-mode PFC front stages in 300W-3kW SMPS designs. Its 600V VDS rating comfortably handles rectified 230V AC input with margin for transient spikes up to 380V, while the 180 mΩ typical RDS(on) keeps conduction losses below 1% at 1kW output. The CoolMOS P7 superjunction architecture provides superior switching loss (Eoss) compared to planar MOSFETs, enabling 100kHz+ switching frequencies for smaller magnetics. The fast body diode with low Qrr eliminates external anti-parallel diodes in bridge topologies, simplifying PFC layout. Pair with Infineon ICE3PCS01G or NCP1654 controllers for CCM PFC designs targeting >98% efficiency.
Recommended
Server & Telecom SMPS Primary Switch
In 1-3kW server and telecom SMPS designs, the IPP60R180P7XKSA1 serves as the primary-side switch in two-switch-forward, half-bridge, or full-bridge topologies. The 18A continuous current rating supports up to 2.5kW at 400V DC bus with adequate thermal margin on a properly heatsinked TO-220 package. CoolMOS P7's reduced gate charge (Qg) cuts driver losses and enables higher switching frequencies, shrinking transformer size. The avalanche ruggedness rating ensures survival during transformer saturation events at startup. The PG-TO220-3 through-hole package is preferred in these applications for direct chassis-mounted heatsinking, eliminating the need for insulator pads and reducing thermal resistance.
Recommended
Solar Micro-Inverter DC-DC Boost
Residential solar micro-inverters and string-inverter DC-DC boost stages benefit from the IPP60R180P7XKSA1's 600V breakdown to handle 200-450V photovoltaic input voltage ranges. Its 18A continuous drain current supports single-MOSFET boost converters up to 5kW peak output. The CoolMOS P7 technology achieves >99% efficiency in CCM operation, critical for solar energy harvesting where every watt of conversion loss reduces revenue. The integrated ESD protection on the gate (HBM Class 2) increases field reliability in outdoor installations exposed to static discharge during installation. Pair with TI UCC28180 or Infineon EiceTM PFC+controller for grid-tie solar applications.
Recommended
Industrial LED Lighting Driver
High-bay industrial LED fixtures (100W-500W) require efficient AC-DC converters that operate reliably in harsh environments. The IPP60R180P7XKSA1 is well-suited as the primary-side switch in single-stage flyback or two-stage PFC+flyback LED driver topologies. Its wide operating temperature range (-55°C to +150°C junction) accommodates sealed fixture environments up to 85°C ambient without thermal throttling. The fast body diode eliminates ringing in boundary-mode operation, reducing EMI filter cost. The 72W power dissipation capability and TO-220 package allow direct attachment to the LED fixture heatsink, simplifying mechanical design.
Recommended
EV Charging Station Auxiliary Power
Level 2 EV charging stations require auxiliary 12V/24V power supplies for control circuitry, contactors, and user-interface modules. The IPP60R180P7XKSA1 is widely used as the primary switch in 50W-150W flyback converters that derive auxiliary power from the AC mains or DC bus. Its 600V rating handles universal input (90-264V AC) with margin, and its low RDS(on) ensures >90% efficiency at 100kHz switching. The automotive-grade ruggedness (Infineon's industrial-grade qualification) supports the 10+ year lifetime requirement of EV infrastructure. Use in conjunction with the Infineon ICE5QR0680BG quasi-resonant flyback controller.
Recommended
Welding & Plasma Cutting Inverter
Industrial welding inverters and plasma cutters operate at high switching frequencies (50-100kHz) to shrink transformer and inductor sizes while delivering 5-20kW output. The IPP60R180P7XKSA1 is a strong candidate for the primary-side full-bridge or push-pull switches in these applications. Its 600V breakdown and 18A continuous rating (with heatsinking) support 10kW designs. The low gate charge of CoolMOS P7 reduces drive losses and enables higher switching frequencies than the predecessor P6, directly improving power density. The avalanche ruggedness is essential to withstand the load transients and short-circuit events characteristic of welding arcs.
Recommended
Recommended Products Summary
Engineering reference data for IPP60R180P7XKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP60R190P6XKSA1 | IPP60R280P7XKSA1 | IPA60R190C6XKSA1 | NTPF190N65S3H | STF24N65M2 | R6015KNX |
|---|---|---|---|---|---|---|---|
| Package | PG-TO220-3 (through-hole) | PG-TO220-3 - same | PG-TO220-3 - same | PG-TO220-3 FullPAK (isolated) | PG-TO220-3 - same | PG-TO220-3 FP - same footprint | PG-TO220-3 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics | ROHM Semiconductor |
| Technology | CoolMOS P7 (Superjunction) | CoolMOS P6 (Superjunction) | CoolMOS P7 (Superjunction) | CoolMOS C6 (Superjunction) | SUPERFET III | MDmesh M2 | PrestoMOS |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 650 V | 650 V | 600 V |
| RDS(on) max at VGS=10V | 180 mΩ | 190 mΩ | 280 mΩ | 190 mΩ | 190 mΩ | 190 mΩ | 150 mΩ |
| Continuous Drain Current (TC=25°C) | 18 A | 17.5 A | 13 A | 17 A | 17 A | 16 A | 20 A |
| Power Dissipation (TC=25°C) | 72 W | 72 W | 60 W | 34 W (FullPAK limited) | 70 W | 32 W (FP isolated) | 80 W |
| Package Isolation | Non-isolated (needs insulator pad) | Non-isolated | Non-isolated | Fully isolated FullPAK | Non-isolated | Fully isolated FP | Non-isolated |
| Param Match to Target | 100% (reference) | 95% | 80% | 95% | 90% | 90% | 90% |
Key Differentiators
- CoolMOS P7 superjunction technology delivers best-in-class efficiency (vs IPP60R190P6XKSA1 (older P6 generation))
- Higher current rating than equivalent C6-generation devices (vs IPA60R190C6XKSA1 (CoolMOS C6, FullPAK isolated))
- Pin-compatible with broader Infineon TO-220 family for BOM consolidation (vs R6015KNX (ROHM PrestoMOS, cross-brand))
Design Notes
The PG-TO220-3 package has a junction-to-ambient thermal resistance (θJA) of approximately 62°C/W without a heatsink. At 18A continuous current and VDS=400V (typical PFC operation), worst-case conduction loss is P = I² × RDS(on) = 18² × 0.18 = 58W. With only free-air mounting, junction temperature would exceed 150°C and trigger thermal shutdown. Estimated: a heatsink with thermal resistance ≤ 0.5°C/W (such as a 4-inch extruded aluminum fin) is mandatory for full-load operation. Apply thermal compound (Wakefield-Volterra 120-2 or equivalent) with 50-100 µm thickness; torque the mounting screw to 0.6-0.8 N·m to avoid cracking the package.
Minimize the high-side switching loop inductance by keeping the input bulk capacitor, MOSFET drain, and PFC diode (or transformer primary) in a tight loop with minimum loop area. Recommended: use 4-layer PCB with 2 oz copper on outer layers for the TO-220 through-hole mount; the TO-220 leads should be clipped to 3-4 mm and bent slightly to reduce lead inductance. Place the gate-drive resistor (typically 10-33Ω) within 10 mm of the gate pin to suppress ringing. According to Infineon application note AN_201702_PL11_001 (CoolMOS P7 mounting guidance), a gate-source resistor of 10kΩ is recommended to prevent inadvertent turn-on from Miller coupling.
Three common design mistakes with the IPP60R180P7XKSA1: (1) Driving the gate below 10V causes partial enhancement and excessive conduction loss - ensure VGS reaches 10V-12V at full load, with margin for supply droop. (2) Exceeding the safe operating area during startup or output short-circuit events can cause thermal runaway - the SOA must be checked at the lowest VGS voltage used and the highest junction temperature. (3) Forgetting the body diode's reverse-recovery in bridge topologies can cause dv/dt-induced shoot-through; even though P7's Qrr is improved over P6, a dead-time of 200-400 ns is still required in half-bridge configurations. The device is avalanche-rated but repeated avalanche events degrade reliability.
For through-hole TO-220 assembly, drill pad holes at 1.0 mm diameter (for 0.8 mm leads) with 2.0 mm annular ring. Keep the drain copper pour (the heatsink tab) thermally connected to a large PCB copper area (≥ 25 cm² on top layer) to spread heat before reaching the external heatsink. According to the Infineon PG-TO220-3 package datasheet, the tab is electrically connected to the drain and MUST be isolated from a grounded heatsink using a silicone pad (Bergquist Sil-Pad 2000 or equivalent, 0.15 mm thickness, 0.4°C/W thermal resistance). Alternatively, choose an isolated FullPAK variant (like the IPA60R190C6XKSA1) to eliminate the insulator pad.
Compliance Information
RoHS compliant per Infineon product page. Industrial grade, not AEC-Q100 qualified (not intended for automotive under-hood). Lead-free reflow-compatible through-hole package.
