IPT007N06NATMA1 vs IAUZ30N06S5L140ATMA1 Comparison

Detailed side-by-side comparison of IPT007N06NATMA1 by Infineon and IAUZ30N06S5L140ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT007N06NATMA1 IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 βœ“ Active
Infineon
IAUZ30N06S5L140ATMA1 IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 βœ“ Active

Specification Comparison

Parameter IPT007N06NATMA1 IAUZ30N06S5L140ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.84 $0.96
Technology OptiMOS 5 (N-channel trench MOSFET) β€”
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, TC=25C) 300 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance (RDS(on), VGS=10V max) 0.75 mOhm β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] β€”
Power Dissipation (PD, TC=25C) 375 W β€”
Operating Temperature Range -55 C to +175 C (TJ) β€”
Package PG-HSOF-8-1 (TOLL) PG-TSDSON-8-32 (S3O8, 3x3 mm)
Mounting Type Surface Mount Surface Mount
Configuration Single N-channel β€”
Gate Charge (QG) [DATA_NEEDED: total gate charge] β€”
Avalanche Energy (EAS) [DATA_NEEDED: single-pulse avalanche energy] β€”
Thermal Resistance (RthJC max) [DATA_NEEDED: RthJC] β€”
MSL Level MSL 1 (per JEDEC J-STD-020) β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
Halogen-Free Yes β€”
Standard Pack Quantity 3000 (Tape & Reel) β€”
FET Type β€” N-Channel
Continuous Drain Current (ID, Tc) β€” 30 A (Tj)
Power Dissipation (PD, Tc) β€” 33 W
RDS(on) Max @ VGS=10 V β€” 14 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 2.2 V (typ)
Total Gate Charge (Qg) β€” 12.2 nC @ VGS=10 V
Output Capacitance (Coss) β€” 888 pF @ VDS=30 V
Operating Junction Temperature β€” -55Β°C to +175Β°C
Technology Family β€” OptiMOS 5
Automotive Grade β€” AEC-Q101 qualified
Gate-Source Voltage Max β€” Β±20 V
Lead-Free / RoHS β€” Yes (RoHS compliant)

Datasheets & Resources

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