IPT007N06NATMA1 vs IAUZ30N06S5L140ATMA1 Perbandingan
Perbandingan bersamaan detil IPT007N06NATMA1 dari Infineon dan IAUZ30N06S5L140ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPT007N06NATMA1 | IAUZ30N06S5L140ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, TC=25C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Power Dissipation (PD, TC=25C) | 375 W | — |
| Rentang Suhu Kerja | -55 C to +175 C (TJ) | — |
| Paket | PG-HSOF-8-1 (TOLL) | PG-TSDSON-8-32 (S3O8, 3x3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single N-channel | — |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | — |
| Level MSL | MSL 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | — |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 30 A (Tj) |
| Power Dissipation (PD, Tc) | — | 33 W |
| RDS(on) Max @ VGS=10 V | — | 14 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 2.2 V (typ) |
| Total Gate Charge (Qg) | — | 12.2 nC @ VGS=10 V |
| Output Capacitance (Coss) | — | 888 pF @ VDS=30 V |
| Suhu Hubung Kerja | — | -55°C to +175°C |
| Technology Family | — | OptiMOS 5 |
| Automotive Grade | — | AEC-Q101 qualified |
| Gate-Source Voltage Max | — | ±20 V |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |