IQE008N03LM5CGATMA1 vs ISC045N03L5SATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5CGATMA1 by Infineon and ISC045N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5CGATMA1
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 β ActiveInfineon
ISC045N03L5SATMA1 - 30V 4.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5CGATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 27 A | β |
| Continuous Drain Current (ID) at Tc=25C | 253 A | β |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A | β |
| Gate-Source Voltage (VGS) Max | +/-16 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) | β |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss typical] | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 89 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +150 Β°C |
| Package | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks | SuperSO8 5x6 (PG-TDSON-8-6) |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) | β |
| AEC-Q100 Automotive | [DATA_NEEDED: AEC-Q100 qualification status] | β |
| Part Number | β | ISC045N03L5SATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS 5 / Trench |
| Continuous Drain Current (ID) at TA=25Β°C | β | 18 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.5 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2 V @ ID=250 Β΅A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Total Gate Charge (Qg) | β | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | β | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |
| RoHS Status | β | Compliant |