IQE008N03LM5CGATMA1 vs ISC045N03L5SATMA1 비교
다음의 상세 나란히 비교: IQE008N03LM5CGATMA1 제조: Infineon 및 ISC045N03L5SATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 ✓ 활성
사양 비교
| 파라미터 | IQE008N03LM5CGATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.74 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 27 A | — |
| Continuous Drain Current (ID) at Tc=25C | 253 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A | — |
| Gate-Source Voltage (VGS) Max | +/-16 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) | — |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss typical] | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 89 W | — |
| 동작 온도 범위 | -55C to +150C (junction) | -55 °C to +150 °C |
| 패키지 | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks | SuperSO8 5x6 (PG-TDSON-8-6) |
| 실장 유형 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) | — |
| AEC-Q100 Automotive | [DATA_NEEDED: AEC-Q100 qualification status] | — |
| Part Number | — | ISC045N03L5SATMA1 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Technology | — | OptiMOS 5 / Trench |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| RoHS 상태 | — | Compliant |