IQE018N06NM6CGATMA1 vs ISZ072N06NM6ATMA1 Comparison
Detailed side-by-side comparison of IQE018N06NM6CGATMA1 by Infineon and ISZ072N06NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE018N06NM6CGATMA1
IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6CGATMA1 β ActiveInfineon
ISZ072N06NM6ATMA1
ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon
ISZ072N06NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE018N06NM6CGATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 60V |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 60 V | β |
| Continuous Drain Current (I_D, Tc) | 178 A | β |
| Continuous Drain Current (I_D, Ta) | 25 A | β |
| R_DS(on) max (V_GS=10 V) | 1.8 mΞ© | β |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | β |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 125 W | β |
| Package | PG-TTFN-9-3 (TOLL/TTFN) | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +175C ( Tj max 175C ) |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS 6 trench MOSFET |
| RoHS Compliance | Compliant | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 57 A |
| Continuous Drain Current (ID, Ta) | β | 12.7 A |
| RDS(on) max @ VGS=10V | β | 7.2 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 3.3 V (typ) |
| Power Dissipation (Tc=25Β°C) | β | 50 W |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |