ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon
MPN: ISZ072N06NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.81 | $8.10 |
| 100 | $0.68 | $68.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.45 | $450.00 |
| 5,000 | $0.38 | $1,900.00 |
ISZ072N06NM6ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. N-channel MOSFETs in the 60V class sit in the power-management hierarchy: MOSFET -> discrete semiconductor -> power switch -> DC-DC converter / motor drive building block. They are the workhorse of synchronous rectification, hot-swap, and low-voltage (<60V) high-current load switching across automotive, industrial, and computing systems.
Key features of this OptiMOS 6 device include a 7.2 mΩ maximum RDS(on) at 10V VGS, optimized gate charge for high-frequency switching, a logic-level capable threshold around 3.3V, and a low thermal resistance path through the exposed-drain PG-TSDSON-8-34 package. The device is rated for 50W power dissipation at 25°C case temperature with proper PCB copper area (6 cm² on 40x40x1.5mm FR4 with 70µm copper), making it well suited to space-constrained high-current designs.
The OptiMOS 6 technology platform uses Infineon's advanced trench cell architecture to minimize both conduction and switching losses. Compared to planar MOSFETs of similar rating, this part exhibits substantially lower gate charge (Qg) and Qgd, which directly reduces driver losses in high-frequency applications such as switched-mode power supplies operating at 500 kHz to 1 MHz.
Typical applications include 48V eMobility auxiliary systems, DC-DC converter primary-side synchronous rectification, hot-swap and OR-ing circuits in telecom/server power distribution, motor drive H-bridges for 12V/24V/48V brushless DC motors, and high-current load switching in industrial PLCs. The 60V rating also covers 48V nominal battery systems and 36V nominal e-bike / light eMobility rails with substantial transient headroom.
When designing with this MOSFET, ensure the gate drive voltage reaches 10V for full RDS(on) enhancement; logic-level operation at 3.3V is partially enhanced, so the on-resistance is higher than the datasheet minimum. A gate-source resistor of 10 kΩ is recommended to prevent inadvertent turn-on from dv/dt-induced Miller current, and PCB layout must minimize the source-loop inductance to limit ringing and voltage overshoot.
This page synthesizes distributor inventory data, drop-in alternative MPNs in the same PG-TSDSON-8-34 footprint, and practical design notes that supplement the Infineon datasheet for engineering selection.
Drop-in alternatives for ISZ072N06NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISZ072N06NM6ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Product Family, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQE018N06NM6CGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.21 / Unit
View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IPTG025N15NM6ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.52 / Unit
View Datasheet →BSC014NE2LSIATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.48 / Unit
View Datasheet →ISZ072N06NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 60V |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A |
| Continuous Drain Current (ID, Ta) | 12.7 A |
| RDS(on) max @ VGS=10V | 7.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) |
| Power Dissipation (Tc=25°C) | 50 W |
| Power Dissipation (Ta) | 2.5 W |
| Package | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C ( Tj max 175C ) |
| Technology | OptiMOS 6 trench MOSFET |
| RoHS Status | Compliant |
| MSL Level | 1 |
ISZ072N06NM6ATMA1 Pin Configuration
| Pin 1 | G — Gate - gate drive input |
| Pin 2 | S — Source - low-side Kelvin source connection |
| Pin 3 | S — Source - low-side Kelvin source connection |
| Pin 4 | S — Source - power source connection |
| Pin 5 | S — Source - power source connection |
| Pin 6 | S — Source - power source connection |
| Pin 7 | S — Source - power source connection |
| Pin 8 | S — Source - power source connection |
| Pin EP | D — Drain - exposed pad, also primary thermal connection |
Safe Operating Area (DC, TC=25C)
Typical Applications
ISZ072N06NM6ATMA1 is suitable for 6 applications: 48V eMobility Auxiliary DC-DC Converter, Hot-Swap / OR-ing in Telecom 48V Distribution, 24V Industrial Motor Drive H-Bridge, 12V Automotive Load Switch / ECU Power Distribution, USB-PD / Synchronous Buck Converter Primary Switch, Battery Management System (BMS) Discharge Path.
48V eMobility Auxiliary DC-DC Converter
The ISZ072N06NM6ATMA1 is well suited to 48V auxiliary DC-DC converters used in mild-hybrid eMobility and e-bike systems where 48V nominal battery rails must be switched at high frequency. Its 60V VDS rating covers 48V nominal plus load-dump transients, while 7.2 mΩ RDS(on) minimizes primary-side conduction loss. In a typical 500 kHz synchronous buck, placing two of these in parallel on the primary side reduces total conduction loss to ~3.6 mΩ, supporting >25A continuous output. The small TSDSON-8-34 footprint enables compact converter modules, and the exposed drain pad provides a low thermal resistance path to the PCB copper for reliable 50W dissipation at 25°C case.
Recommended
Hot-Swap / OR-ing in Telecom 48V Distribution
The ISZ072N06NM6ATMA1 is widely deployed as a hot-swap or OR-ing MOSFET in 48V telecom and server power distribution backplanes. Its 60V VDS provides comfortable margin above the -36V to -72V telecom operating range, while the 7.2 mΩ RDS(on) keeps the voltage drop and I²R loss across the OR-ing FET acceptable at full load. In a typical A+B feed OR-ing configuration, the device handles continuous currents up to 12.7A on standard FR4 PCB area with proper copper layout. Infineon's OptiMOS 6 platform also delivers low Qgd, which reduces inrush energy during hot-plug events and improves system reliability.
Recommended
24V Industrial Motor Drive H-Bridge
The ISZ072N06NM6ATMA1 serves as the low-side and high-side switch in 24V industrial H-bridge motor drive stages for brushless DC (BLDC) and brushed DC motors in factory automation. The 60V VDS comfortably covers 24V nominal plus inductive flyback transients, and the 7.2 mΩ RDS(on) per device keeps the I²R loss in a 20A continuous motor drive under 3W per FET - easily handled by the TSDSON-8-34 package with appropriate PCB copper. Using all four switches in a single H-bridge with the BTS3028SDRATMA1 gate driver provides dead-time insertion and shoot-through protection. The MOSFET's low Qg also enables PWM operation above 50 kHz for smooth torque control.
Recommended
12V Automotive Load Switch / ECU Power Distribution
In automotive 12V body control modules and ECU power distribution, the ISZ072N06NM6ATMA1 acts as a high-side or low-side load switch driving lamps, solenoids, and small motors. The 60V VDS provides 36V load-dump margin above 12V nominal, well within the ISO 7637-2 transient envelope. With RDS(on) of 7.2 mΩ at 10V VGS, the device drops only 72 mV at 10A load - far below the typical 500 mV budget for a high-side load switch - minimizing dissipation to about 0.7W at full load. The TSDSON-8-34 footprint enables high-density PCB layouts common in modern automotive ECUs with dozens of switched outputs.
Recommended
USB-PD / Synchronous Buck Converter Primary Switch
The ISZ072N06NM6ATMA1 is commonly used as the primary-side or synchronous-rectification switch in 12V/24V-input USB-Power-Delivery buck converters that deliver 5V/9V/15V/20V at up to 5A. Its 60V VDS comfortably covers 24V input plus ringing, while 7.2 mΩ RDS(on) yields high efficiency above 95% in a 100W USB-PD application. OptiMOS 6's low Qg (Qg total below 30 nC typical) enables switching frequencies above 500 kHz with reasonable driver losses, shrinking the output LC filter. The compact TSDSON-8-34 footprint also lets the converter fit within the tight 25x30 mm area typical of laptop and tablet USB-PD adapters.
Recommended
Battery Management System (BMS) Discharge Path
In multi-cell Li-ion battery packs for e-mobility and power tools, the ISZ072N06NM6ATMA1 serves as the pack-level discharge MOSFET that connects the battery stack to the load. The 60V VDS comfortably covers 14-16S Li-ion packs (up to 67.2V fully charged) with safety margin, and the 7.2 mΩ RDS(on) on each of the high-side and low-side FETs limits continuous conduction loss in high-power e-bike and power-tool packs. Infineon's proven OptiMOS 6 quality and reliability track record in automotive applications make this part a strong choice for safety-critical BMS discharge paths. The small TSDSON-8-34 footprint also enables integration inside the battery housing without adding bulk.
Recommended
Recommended Products Summary
Engineering reference data for ISZ072N06NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE018N06NM6CGATMA1 | ISC015N06NM5ATMA1 | IPTG025N15NM6ATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|---|---|---|
| Package | PG-TSDSON-8-34 | PG-TSDSON-8-34 | PG-TSDSON-8-34 | PG-TSDSON-8-34 | PG-TSDSON-8-34 |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS (Drain-Source Voltage) | 60 V | 60 V | 60 V | 150 V | 25 V |
| RDS(on) max @ VGS=10V | 7.2 mΩ | 1.8 mΩ | 1.5 mΩ | 2.5 mΩ | 1.4 mΩ |
| Technology Generation | OptiMOS 6 (60V) | OptiMOS 6 (60V) | OptiMOS 5 (60V) | OptiMOS 6 (150V) | OptiMOS 5 (25V) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- OptiMOS 6 generation gives >37% lower RDS(on) and ~25% higher FOM (Qg x RDS(on)) vs OptiMOS 5 (vs ISC015N06NM5ATMA1 (OptiMOS 5, 60V))
- 60V VDS with low 7.2 mΩ RDS(on) in a small TSDSON-8-34 footprint (vs IPTG025N15NM6ATMA1 (OptiMOS 6, 150V, 2.5 mΩ))
- Compact TSDSON-8-34 footprint enables high-density PCB layouts (vs BSC014NE2LSIATMA1 (OptiMOS 5, 25V, 1.4 mΩ))
Design Notes
The 50W power dissipation rating assumes the standard Infineon test PCB (40x40x1.5mm FR4 with 6 cm² of 70 µm copper for the drain). In a real product with smaller copper area, the continuous drain current must be de-rated using Diagram 2 from the datasheet, which plots allowable current versus case temperature. For the 12.7A TA rating to be valid, the PCB copper area on the drain tab must equal or exceed the test conditions. Below 6 cm² of copper, expect substantial de-rating.
Place a gate-series resistor of 10-100 Ω close to the gate pin to damp the gate-source loop and limit ringing. Add a 10 kΩ gate-source pull-down resistor to keep the MOSFET off during MCU reset or floating-GP conditions - this prevents inadvertent turn-on from dv/dt-induced Miller current through Cgd, which can otherwise cause shoot-through in half-bridge configurations. Use Kelvin source connection (pin 2/3) for the gate drive return to avoid source-inductance-induced oscillation.
Do not assume the 3.3V gate threshold means the device is fully enhanced at 3.3V VGS - the 3.3V figure is VGS(th) where the device just begins to conduct. To achieve the datasheet 7.2 mΩ RDS(on), drive VGS to 10V. At logic-level 4.5V drive the on-resistance is significantly higher (typically 10-14 mΩ), which doubles conduction loss. For battery-powered applications where 10V drive is unavailable, consider a gate-driver charge pump or a logic-level-optimized alternative.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is a standard industrial/consumer grade part. For AEC-Q100 qualified automotive alternates, see the ISC-series and IPx-series within the Infineon OptiMOS 6 60V family.
