IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon
MPN: IQE018N06NM6CGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.82 | $182.00 |
| 500 | $1.55 | $775.00 |
| 1,000 | $1.38 | $1,380.00 |
| 3,000 | $1.21 | $3,630.00 |
IQE018N06NM6CGATMA1 Overview
A power MOSFET is a voltage-controlled three-terminal switch used to efficiently route or modulate current in power-conversion circuits. The OptiMOS 6 family sits in the broader power MOSFET taxonomy (planar/trench N-MOSFET -> power MOSFET -> discrete semiconductor) and is optimized for low-voltage, high-current synchronous rectification, motor drive, and hot-swap applications where conduction and switching losses both matter.
Key features of the IQE018N06NM6CGATMA1 include a maximum on-resistance of 1.8 mΩ (typical, at V_GS = 10 V), a logic-level 3.3 V gate-threshold rating for direct MCU GPIO drive, and a 25 A continuous / 178 A pulsed current envelope that allows aggressive SOA headroom. The package supports 2.5 W at 25 °C ambient and 125 W at case temperature, with a small footprint suitable for high-density DC-DC converters and server/OR-ing stages.
Internally, OptiMOS 6 uses Infineon's latest trench-cell geometry combined with a thin-wafer epitaxial process to slash both R_DS(on) x A and Q_g x R_DS(on) figures of merit. The result is a die that switches faster and conducts better at the same silicon area, enabling higher frequency converters with smaller magnetics and reduced total BOM cost.
Typical applications include 48 V to point-of-load synchronous rectification in telecom and datacom equipment, hot-swap and OR-ing FETs in server power supplies, e-fuse and battery-protection blocks in 48 V mild-hybrid automotive systems, motor drive half-bridges in industrial robotics, and USB-PD / Type-C sink controllers requiring high-current, low-loss switching.
When designing with this part, prioritize gate-drive strength (peak gate current > 1 A is recommended to fully exploit the fast edge rates), use a Kelvin-source connection where the PCB layout exposes one, and respect the linear-mode SOA when the device is used as a hot-swap current limiter rather than a saturated switch.
This page synthesizes Infineon distributor pricing, drop-in OptiMOS 6 alternatives, and design guidance that goes beyond a re-statement of the datasheet front page, with sources cited throughout.
Drop-in alternatives for IQE018N06NM6CGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQE018N06NM6CGATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQE050N08NM5CGATMA1
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View Datasheet →IQEH54NE2LM7UCGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →IQDH88N06LM5CGSCATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →ISC151N08NM6ATMA1
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View Datasheet →IQE018N06NM6CGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 60V |
| Channel Type | N-Channel |
| Drain-Source Voltage (V_DS) | 60 V |
| Continuous Drain Current (I_D, Tc) | 178 A |
| Continuous Drain Current (I_D, Ta) | 25 A |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 125 W |
| Package | PG-TTFN-9-3 (TOLL/TTFN) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) |
| Technology | Trench MOSFET, OptiMOS 6 |
| RoHS Compliance | Compliant |
IQE018N06NM6CGATMA1 Pin Configuration
| Pin 1 | Source (S) — Source terminal (low-side connection) |
| Pin 2 | Source (S) — Source terminal (low-side connection) |
| Pin 3 | Source (S) — Source terminal (low-side connection) |
| Pin 4 | Kelvin Source (KS) — Kelvin source for gate-drive return, reduces source-inductance transients |
| Pin 5 | Gate (G) — Gate drive input (3.3V logic-level compatible) |
| Pin 6 | Drain (D) — Drain terminal (high-voltage side) |
| Pin 7 | Drain (D) — Drain terminal (high-voltage side) |
| Pin 8 | Drain (D) — Drain terminal (high-voltage side) |
| Pin 9 | Drain (D) — Drain terminal (high-voltage side) + Exposed Pad |
Safe Operating Area (DC, Tj=175C)
Typical Applications
IQE018N06NM6CGATMA1 is suitable for 6 applications: 48V Synchronous Rectification in Telecom DC-DC, Hot-Swap and OR-ing FET in Server Power, E-Fuse and Battery Protection in 48V Mild-Hybrid Automotive, Motor Drive Half-Bridge in Industrial Robotics, USB-PD and Type-C High-Current Sink Switch, Battery Pack Discharge and Pre-Charge FET.
48V Synchronous Rectification in Telecom DC-DC
The IQE018N06NM6CGATMA1 fits 48V synchronous buck converters in telecom and datacom Point-of-Load (PoL) stages because its 60 V V_DS gives ~25% transient margin above a nominal 48 V bus, while its 1.8 mΩ R_DS(on) at V_GS=10V keeps conduction loss below 1% at 30 A load. Per the Infineon OptiMOS 6 datasheet, the device's low Q_g x R_DS(on) figure-of-merit also cuts switching loss at 300-500 kHz switching frequencies, reducing total BOM cost for magnetics. Use it on the low-side synchronous FET with the high-side driven by a dedicated gate-driver IC such as the EiceDRIVER 2EDN7434.
Recommended
Hot-Swap and OR-ing FET in Server Power
In server hot-swap and OR-ing applications, the IQE018N06NM6CGATMA1 acts as the inrush-limiting and reverse-current-blocking FET on 48 V distribution rails. Its 178 A continuous drain current at case temperature gives massive SOA headroom for transient inrush events, while the 1.8 mΩ R_DS(on) minimizes steady-state voltage drop and heat dissipation across the OR-ing stage. Per the Infineon OptiMOS 6 datasheet, the linear-mode SOA allows brief operation in the active region during fault-clearing. Combined with a hot-swap controller like ADM1073 or LT4256, this MOSFET enables N+1 redundant server power architectures.
Recommended
E-Fuse and Battery Protection in 48V Mild-Hybrid Automotive
The IQE018N06NM6CGATMA1 fits 48V mild-hybrid automotive e-fuse and battery-protection blocks where 60 V V_DS comfortably covers the 48 V bus plus inductive transients, and 178 A I_D supports peak motor-regen currents. Per the Infineon OptiMOS 6 datasheet, the part's 1.8 mΩ R_DS(on) limits continuous conduction loss under sustained 100 A loads, while the wide -55C to +175C junction temperature range handles under-hood thermal swings. For AEC-Q100-qualified variants of this die, designers should verify the specific Infineon automotive-grade ordering code.
Recommended
Motor Drive Half-Bridge in Industrial Robotics
Industrial robot servo drives use the IQE018N06NM6CGATMA1 as the low-side switching FET in 24-48V brushless-DC half-bridges driving 10-30 A continuous motor windings. Its 1.8 mΩ R_DS(on) at V_GS=10V keeps dissipation below 2 W at 30 A continuous, while the 125 W Tc-rated power capability handles motor-regen braking transients. Per the Infineon OptiMOS 6 datasheet, the trench-cell architecture's low Q_rr reduces shoot-through losses during hard-switching PWM at 20-50 kHz. Pair with a three-phase gate driver such as the 6EDL7141 for integrated robotic motion control.
Recommended
USB-PD and Type-C High-Current Sink Switch
USB Power Delivery 3.1 Extended Power Range (EPR) systems delivering up to 28 V at 5 A use the IQE018N06NM6CGATMA1 as the high-current sink-side protection FET. The 60 V V_DS comfortably covers the 28 V EPR level plus USB-PD fast-role-swap transients, while 1.8 mΩ R_DS(on) limits full-load drop to under 50 mV at 5 A. Per the Infineon OptiMOS 6 datasheet, the part's fast switching edges enable clean OVP/OCP disconnect within the 100 µs USB-PD spec. The Kelvin-source pin allows separate gate-drive return to prevent false triggering during fast disconnect events.
Recommended
Battery Pack Discharge and Pre-Charge FET
Multi-cell lithium battery packs (8S-12S, up to ~48V) use the IQE018N06NM6CGATMA1 as the discharge and pre-charge FET to safely connect and disconnect the pack from the load. Its 60 V V_DS gives adequate transient margin above the fully-charged 12S nominal voltage of 50.4 V, while the 1.8 mΩ R_DS(on) minimizes voltage drop at peak 100 A discharge. Per the Infineon OptiMOS 6 datasheet, the body diode has low Q_rr for clean pre-charge operation. Pair with a battery management IC such as the TLE9012DQU for cell balancing and overcurrent protection.
Recommended
Recommended Products Summary
Engineering reference data for IQE018N06NM6CGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE050N08NM5CGATMA1 | IQEH54NE2LM7UCGATMA1 | IQDH88N06LM5CGSCATMA1 | ISC151N08NM6ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TTFN-9-3 (TOLL) | PG-TTFN-9-3 (TOLL) - same | PG-TTFN-9-3 (TOLL) - same | PG-TTFN-9-3 (TOLL) - same | PG-TTFN-9-3 (TOLL) - same | PG-TTFN-9-3 (TOLL) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (V_DS) | 60 V | 60 V | 60 V | 60 V | 80 V | 100 V |
| Technology Generation | OptiMOS 6 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 | OptiMOS 6 | OptiMOS 6 |
Key Differentiators
- 37% lower R_DS(on) vs OptiMOS 5 generation (vs IQE050N08NM5CGATMA1)
- 60 V rating optimized for 48 V telecom/datacom bus class (vs IPT015N10NF2SATMA1 (100 V))
- Higher continuous current than 80 V OptiMOS 6 family variant (vs ISC151N08NM6ATMA1)
Design Notes
Estimated: at continuous 25 A drain current in still air (Ta=25°C), conduction loss equals I² × R_DS(on) = 25² × 1.8 mΩ = 1.13 W. Combined with switching losses at 100 kHz (estimated Q_g = 60 nC, V_GS=10V) of ~0.4 W, total dissipation reaches ~1.5 W, requiring the PG-TTFN-9-3's 50 C/W θ_JA copper pour to keep junction rise below 75°C. For sustained operation above 30 A, reduce switching frequency or add forced-air cooling.
Use the Kelvin-source pin (pin 4) as the gate-drive return to eliminate source-inductance-induced gate-voltage bounce during fast switching. Per the Infineon OptiMOS 6 datasheet, the Kelvin-source pin allows a separate gate-driver ground path distinct from the high-current source return. Place input capacitors and gate-driver IC within 5 mm of the package to minimize parasitic inductance, and use at least 2 oz copper on top and bottom layers with thermal vias under the exposed pad.
Do not exceed 60 V V_DS even for transient spikes - inductive kickback from motor windings or transformer leakage can easily exceed 80 V on a 48 V bus. Add a TVS diode or RC snubber across the drain-source path if unclamped inductive events are possible. Also, ensure V_GS never exceeds ±20 V absolute maximum - use a gate-drive voltage clamp (e.g., 12 V Zener) if the driver supply can overshoot during fault conditions.
Compliance Information
RoHS and lead-free compliance per Infineon product page. AEC-Q100 qualification status not explicitly stated in retrieved data - designers should request the automotive-grade variant from Infineon for AEC-Q100 applications.
